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BC212-B

Infineon Technologies

BC212-B by Infineon Technologies

Infineon BC212-B is a PNP BJT transistor with hFE of 200, ideal for switching applications. With max IC of 0.1A and fT of 250MHz, it operates at up to 150°C. Its plastic package has a cylindrical shape with through-hole terminals, making it suitable for various electronic designs.

Median Price

$0.019

Lifecycle Status

Suppliers In-Stock

19

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1k+

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Nova Conductors

Japan . 800 parts In-Stock

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Digiode

USA . 6,339 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 5,378 parts In-Stock

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Zilex Electronics Inc.

Canada . 2,025 parts In-Stock

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Anansix

USA . 1,761 parts In-Stock

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VNN

France . 832 parts In-Stock

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ICP Electronique

France . 455 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 314 parts In-Stock

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ECAB

Sweden . 222 parts In-Stock

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Vyrian

USA . 193 parts In-Stock

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ABC Electronics Ltd.

UK . 155 parts In-Stock

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Whistler Technology

UK . 131 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 129 parts In-Stock

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LittleDiode

UK . 127 parts In-Stock

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Component Sense

UK . 81 parts In-Stock

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Speed Components Ltd

Israel . 80 parts In-Stock

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GES GmbH

Germany . 74 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 50 parts In-Stock

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Manotoh

Italy . 15 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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$0.019

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$0.018

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Continental Prestige Electronics

USA . 9,611 parts In-Stock

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Argo Parts USA

USA . 2,104 parts In-Stock

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2,104

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Parana Technologies

USA . 619 parts In-Stock

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$0.572

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$1.666

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619

$0.572

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$1.666

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DigiPath Technology Company

USA . 1,066 parts In-Stock

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$0.630

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$0.580

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$0.630

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IDEA Electronic Components Group

UK . 2,218 parts In-Stock

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$0.643

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$0.579

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$0.643

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ChromeModa Solutions

Germany . 2,092 parts In-Stock

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$0.643

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$0.527

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$0.527

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Aztec Data Supply Inc.

USA . 2,779 parts In-Stock

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$1.043

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Modulus Dynamics

Lithuania . 20,883 parts In-Stock

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$1.285

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$1.234

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$1.182

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AZTECH Wire

Italy . 476 parts In-Stock

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$6.295

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One Stop Electronics

USA . 540 parts In-Stock

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$33.050

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Ampacity Inc.

Singapore . 1,320 parts In-Stock

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$37.050

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Semicontronic

India . 1,051 parts In-Stock

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$38.050

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$37.099

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$36.908

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QUARKTWIN TECHNOLOGY LTD

USA . 15,071 parts In-Stock

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SupplyDigital Components

Austria . 6,394 parts In-Stock

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TANS Electronics

Latvia . 5,312 parts In-Stock

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Problanco Electronics

Mexico . 4,098 parts In-Stock

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Kulean Microsystems

USA . 3,839 parts In-Stock

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GreenTree Electronics

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Infinite Electronics LLP (Excess)

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UHIMA Technologies

Türkiye . 640 parts In-Stock

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Supply Digital

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Perfect Parts

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Corohmni

South Africa . 76 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 50 parts In-Stock

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Glotronic Ltd.

UK . 40 parts In-Stock

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Overview

Upgrade your electronics with the BC212-B by Infineon Technologies, a high-quality Small Signal Bipolar Junction Transistor designed for switching applications. Infineon Technologies is known for its reliable and efficient components, offering customers peace of mind when it comes to performance. With a minimum DC current gain of 200 and a maximum operating temperature of 150°C, this PNP transistor provides excellent power dissipation and high collector current capacity. Trust in the BC212-B to enhance your projects and bring innovation to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the transistor and allows for easy handling during assembly and maintenance.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, such as in complementary transistor configurations.

Configuration: SINGLE

Simplifies circuit design and allows for easy integration into various electronic systems.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast response time and high efficiency in turning on/off.

Package Shape: ROUND

Facilitates easier mounting and soldering compared to irregular-shaped packages.

Terminal Form: THROUGH-HOLE

Enables easy and secure connection to the circuit board for reliable performance.

No. of Terminals: 3

Simplifies circuit connections and reduces the chances of errors during assembly.

Maximum Power Dissipation (Abs): 0.35 W

Ensures the transistor can handle moderate power levels without overheating or damaging the device.

Package Style (Meter): CYLINDRICAL

Allows for efficient heat dissipation and compact design for space-constrained applications.

Minimum DC Current Gain (hFE): 200

Provides consistent and reliable amplification of input signals in various circuit configurations.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without performance degradation, suitable for challenging environments.

Transistor Element Material: SILICON

Offers high reliability, low leakage, and stable performance over a wide temperature range.

Maximum Collector Current (IC): 0.1 A

Allows for handling moderate currents in the circuit while maintaining stability and efficiency.

Terminal Position: BOTTOM

Facilitates easy PCB layout and assembly while ensuring proper connection orientation.

Nominal Transition Frequency (fT): 250 MHz

Suitable for high-frequency applications, especially in RF circuits where fast switching is essential.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC212-B attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC212-B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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