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BC212BRL1

Onsemi

BC212BRL1 by Onsemi

BC212BRL1 by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.35W, hFE of 60, and operates at up to 150 °C. This through-hole transistor features a max collector-emitter voltage of 50V and nominal transition frequency of 280MHz in a cylindrical package.

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4

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1k+

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Vyrian

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Digiode

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Component Sense

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ACDS - Activité Composants Distribution Service

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Native Components

USA . 645 parts In-Stock

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Component Stockers USA

USA . 278 parts In-Stock

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$99.990

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Problanco Electronics

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Kulean Microsystems

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SupplyDigital Components

Austria . 4,699 parts In-Stock

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Assy Fe

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TANS Electronics

Latvia . 2,766 parts In-Stock

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UHIMA Technologies

Türkiye . 939 parts In-Stock

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Corphita

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Cyclops Electronics Ltd (Excess)

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Corohmni

South Africa . 439 parts In-Stock

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Glotronic Ltd.

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Northwest PG Solutions

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Overview

Enhance your electronic projects with the reliable BC212BRL1 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and performance in their Small Signal Bipolar Junction Transistors. Ideal for amplifier applications, this PNP transistor offers a maximum collector-emitter voltage of 50V and a peak reflow temperature of 235 °C. With a minimum DC current gain of 60 and a nominal transition frequency of 280MHz, the BC212BRL1 provides exceptional value and benefits to customers seeking high-quality components for their projects. Trust Onsemi for superior products that deliver results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Allows for easy configuration in PNP circuits and applications.

Configuration: SINGLE

Simplified design and usage in single transistor circuits.

Transistor Application: AMPLIFIER

Optimized for use in amplification circuits, ensuring reliable performance.

Package Shape: ROUND

Compact and space-saving design for efficient PCB layout.

Terminal Form: THROUGH-HOLE

Easy integration onto PCBs with through-hole mounting.

Maximum Power Dissipation (Abs): 0.35 W

Able to handle moderate power dissipation, suitable for various applications.

Minimum DC Current Gain (hFE): 60

Provides consistent amplification capabilities with minimum current gain.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 50 V

Supports high voltage applications while maintaining reliability.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, suitable for various circuits.

Nominal Transition Frequency (fT): 280 MHz

Ensures high-speed operation and performance in amplifier circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC212BRL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC212BRL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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