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2N5401ZL1G

Onsemi

2N5401ZL1G by Onsemi

2N5401ZL1G by Onsemi is a PNP BJT with max. collector-emitter voltage of 150V, max. collector current of 0.6A, and min. DC current gain of 50. It is used in amplifier applications due to its high transition frequency of 100MHz and max power dissipation of 0.63W.

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2

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1k+

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Vyrian

USA . 4,925 parts In-Stock

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Digiode

USA . 1,599 parts In-Stock

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Native Components

USA . 578 parts In-Stock

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$5.550

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AZTECH Wire

Italy . 603 parts In-Stock

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Component Stockers USA

USA . 567 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 7,985 parts In-Stock

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Kulean Microsystems

USA . 6,803 parts In-Stock

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SupplyDigital Components

Austria . 4,125 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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TANS Electronics

Latvia . 2,570 parts In-Stock

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UHIMA Technologies

Türkiye . 411 parts In-Stock

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Corphita

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Northwest PG Solutions

USA . 184 parts In-Stock

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Corohmni

South Africa . 93 parts In-Stock

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Overview

Elevate your electronic designs with the high-quality 2N5401ZL1G from Onsemi, a leading manufacturer in the industry. This PNP Small Signal Bipolar Junction Transistor is perfect for amplifier applications, delivering exceptional performance and reliability. With a maximum collector-emitter voltage of 150V and a nominal transition frequency of 100MHz, this transistor offers unmatched value and benefits to customers looking for top-notch components. Trust Onsemi for premium quality and unlock endless possibilities with the 2N5401ZL1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and cost-effective.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifiers, making this product suitable for amplifier applications.

Configuration: SINGLE

Single configuration transistors are easier to use and design with, making this product user-friendly.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in such use cases.

Package Shape: ROUND

The round package shape allows for easy mounting and installation in various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a more reliable connection, making this transistor suitable for applications where durability is important.

No. of Terminals: 3

Having 3 terminals allows for flexibility in circuit design and connectivity options.

Maximum Power Dissipation (Abs): 0.63 W

With a maximum power dissipation of 0.63W, this transistor can handle moderate power levels.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compact and space-saving, ideal for applications with limited space.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures consistent and reliable amplification in circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can operate reliably in a variety of environments.

Maximum Collector-Emitter Voltage: 150 V

The high maximum collector-emitter voltage rating of 150V makes this product suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this product a durable choice for electronic circuits.

Maximum Collector Current (IC): 0.6 A

With a maximum collector current of 0.6A, this transistor can handle moderate current levels.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin, silver, and copper ensures good conductivity and resistance to corrosion.

Terminal Position: BOTTOM

The bottom terminal position makes it easier to mount and connect the transistor in circuits.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this transistor can withstand high-temperature soldering processes.

Nominal Transition Frequency (fT): 100 MHz

With a nominal transition frequency of 100MHz, this transistor is capable of operating at high frequencies, making it suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N5401ZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5401ZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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