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2N6517G

Onsemi

2N6517G by Onsemi

2N6517G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 350V and max. collector current of 0.5A. It has a min. DC current gain of 15, making it suitable for switching applications with a max. power dissipation of 0.625W. The transistor operates at up to 150 °C and has a nominal transition frequency of 40MHz, ideal for high-speed switching circuits.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Chip Stock

USA . 34,000 parts In-Stock

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Vyrian

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Connect4Technologies Inc.

Canada . 3,270 parts In-Stock

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Digiode

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Pegasus Components GmbH

Germany . 260 parts In-Stock

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Native Components

USA . 710 parts In-Stock

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$1.178

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Northwest PG Solutions

USA . 1,593 parts In-Stock

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AZTECH Wire

Italy . 929 parts In-Stock

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Component Stockers USA

USA . 320 parts In-Stock

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$99.990

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Kulean Microsystems

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Problanco Electronics

Mexico . 2,812 parts In-Stock

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SupplyDigital Components

Austria . 2,295 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 1,327 parts In-Stock

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Corohmni

South Africa . 360 parts In-Stock

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Overview

Looking for a reliable Small Signal Bipolar Junction Transistor (BJT) for your switching applications? Look no further than the Onsemi 2N6517G! Manufactured by Onsemi, this NPN transistor offers high-quality performance in a durable plastic/epoxy package. With a maximum collector-emitter voltage of 350V and a maximum operating temperature of 150 °C, this transistor is perfect for a variety of switching tasks. Trust Onsemi for top-notch quality and reliability, and experience the benefits of using the 2N6517G in your projects today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor during handling and operation.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in various applications.

Configuration: SINGLE

Simplifies circuit design and layout, making the transistor easy to integrate into a circuit.

Transistor Application: SWITCHING

Designed for efficient switching operations, making this transistor suitable for applications requiring fast switching speeds.

Maximum Power Dissipation (Abs): 0.625 W

With a high power dissipation capability, this transistor can handle moderate power levels without overheating.

Maximum Collector-Emitter Voltage: 350 V

Allows for operation in circuits with higher voltage levels, increasing the versatility of this transistor.

Nominal Transition Frequency (fT): 40 MHz

High transition frequency enables this transistor to operate at high frequencies, making it suitable for applications requiring fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6517G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

3500 ns

Maximum Turn On Time (ton):

200 ns

Trade Compliance

2N6517G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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