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BC447G

Onsemi

BC447G by Onsemi

BC447G by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 1.5W, and max collector-emitter voltage of 80V. Ideal for applications requiring a single configuration transistor with hFE of at least 50, operating up to 150 °C, and featuring a nominal transition frequency of 200MHz.

Median Price

$0.079

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,500 parts In-Stock

1+ parts

-

100+ parts

$0.079

1k+ parts

$0.066

10k+ parts

$0.059

3,500

-

$0.079

$0.066

$0.059

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 637 parts In-Stock

1+ parts

$0.062

100+ parts

-

1k+ parts

-

10k+ parts

-

637

$0.062

-

-

-

Vyrian

USA . 6,359 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

-

6,359

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,767 parts In-Stock

1+ parts

$0.058

100+ parts

-

1k+ parts

-

10k+ parts

-

1,767

$0.058

-

-

-

Corohmni

South Africa . 253 parts In-Stock

1+ parts

$0.065

100+ parts

-

1k+ parts

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253

$0.065

-

-

-

Native Components

USA . 13 parts In-Stock

1+ parts

$0.095

100+ parts

-

1k+ parts

-

10k+ parts

$0.091

13

$0.095

-

-

$0.091

Northwest PG Solutions

USA . 181 parts In-Stock

1+ parts

$0.104

100+ parts

-

1k+ parts

-

10k+ parts

$0.092

181

$0.104

-

-

$0.092

AZTECH Wire

Italy . 338 parts In-Stock

1+ parts

$18.210

100+ parts

-

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338

$18.210

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Problanco Electronics

Mexico . 2,310 parts In-Stock

1+ parts

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2,310

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Kulean Microsystems

USA . 1,616 parts In-Stock

1+ parts

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100+ parts

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1,616

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UHIMA Technologies

Türkiye . 961 parts In-Stock

1+ parts

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961

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SupplyDigital Components

Austria . 748 parts In-Stock

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748

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TANS Electronics

Latvia . 179 parts In-Stock

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179

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Overview

Looking for a reliable and efficient small signal bipolar junction transistor (BJT)? Look no further than the BC447G by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers high-quality products that meet the demands of various applications. The BC447G offers customers exceptional value with its NPN configuration, maximum power dissipation of 1.5W, and a nominal transition frequency of 200 MHz. Whether you're working on amplifiers, oscillators, or other electronics projects, the BC447G is the perfect choice for your needs. Trust Onsemi to provide you with the quality and performance you deserve.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and longevity.

Polarity or Channel Type: NPN

Common and widely used type of BJT, making it compatible with a variety of circuits and applications.

Configuration: SINGLE

Simplifies circuit design and makes the transistor easy to integrate into electronic systems.

Package Shape: ROUND

Allows for easy mounting and positioning on a circuit board.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and connection to the circuit board.

Maximum Power Dissipation (Abs): 1.5 W

Can handle relatively high power levels, making it suitable for a range of applications.

Package Style (Meter): CYLINDRICAL

Compact and space-saving design ideal for smaller electronic devices.

Minimum DC Current Gain (hFE): 50

Ensures consistent and reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without risk of damage, increasing versatility.

Maximum Collector-Emitter Voltage: 80 V

Allows for higher voltage levels to be handled, expanding the range of potential applications.

Transistor Element Material: SILICON

Silicon is a widely-used semiconductor material known for its reliability and efficiency.

Maximum Collector Current (IC): 0.3 A

Able to handle moderate current levels, suitable for low to medium power applications.

Terminal Finish: TIN SILVER COPPER

Provides good electrical conductivity and corrosion resistance, ensuring reliable connections.

Terminal Position: BOTTOM

Facilitates easy installation and connection within the circuit.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during soldering processes without damage.

Nominal Transition Frequency (fT): 200 MHz

High frequency response allows for fast switching speeds and signal processing capabilities.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC447G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC447G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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