Loading...

BC447

Onsemi

BC447 by Onsemi

BC447 by Onsemi is a NPN BJT with 3 terminals and max. power dissipation of 0.625W. With hFE of 50, it operates up to 150 °C and has VCE of 80V. Ideal for applications requiring high transition frequency (fT) of 200MHz in cylindrical package style.

Median Price

$0.090

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

$0.079

1k+ parts

$0.066

10k+ parts

$0.059

10,000

-

$0.079

$0.066

$0.059

DigiKey

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.100

10,000

-

-

-

$0.100

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,445 parts In-Stock

1+ parts

$0.062

100+ parts

-

1k+ parts

-

10k+ parts

-

2,445

$0.062

-

-

-

Vyrian

USA . 2,492 parts In-Stock

1+ parts

$0.065

100+ parts

-

1k+ parts

-

10k+ parts

-

2,492

$0.065

-

-

-

ComSIT Distribution GmbH

Germany . 1,050 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,050

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 214 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

214

-

-

-

-

ECAB

Sweden . 148 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

148

-

-

-

-

LittleDiode

UK . 18 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,053 parts In-Stock

1+ parts

$0.058

100+ parts

-

1k+ parts

-

10k+ parts

-

1,053

$0.058

-

-

-

Corohmni

South Africa . 118 parts In-Stock

1+ parts

$0.065

100+ parts

-

1k+ parts

-

10k+ parts

-

118

$0.065

-

-

-

Native Components

USA . 280 parts In-Stock

1+ parts

$45.701

100+ parts

-

1k+ parts

-

10k+ parts

$43.873

280

$45.701

-

-

$43.873

Northwest PG Solutions

USA . 1,861 parts In-Stock

1+ parts

$50.271

100+ parts

-

1k+ parts

-

10k+ parts

-

1,861

$50.271

-

-

-

Component Stockers USA

USA . 767 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

767

$99.990

-

-

-

Continental Prestige Electronics

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.059

10,000

-

-

-

$0.059

Problanco Electronics

Mexico . 7,805 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,805

-

-

-

-

Kulean Microsystems

USA . 7,587 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,587

-

-

-

-

SupplyDigital Components

Austria . 4,567 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,567

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 4,170 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,170

-

-

-

-

TANS Electronics

Latvia . 1,801 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,801

-

-

-

-

UHIMA Technologies

Türkiye . 534 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

534

-

-

-

-

Assy Fe

Spain . 25 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

25

-

-

-

-

Overview

Enhance the performance and efficiency of your electronic applications with the BC447 by Onsemi. As a trusted manufacturer of high-quality Small Signal Bipolar Junction Transistors (BJT), Onsemi delivers reliable and durable components that guarantee optimal functionality. The NPN configuration and maximum collector-emitter voltage of 80V make it an ideal choice for various applications, from amplifiers to lighting controls. With a minimum DC current gain of 50 and a maximum operating temperature of 150 °C, the BC447 offers exceptional value and benefits, ensuring seamless integration and long-term reliability in your projects. Choose Onsemi's BC447 for superior quality and performance in all your electronic designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good heat dissipation and mechanical strength, making the transistor durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are easy to control and widely used in amplifier and switching circuits.

Configuration: SINGLE

Simplified design and easy to integrate into circuit layouts.

Terminal Form: THROUGH-HOLE

Simplifies soldering and is compatible with standard PCB assembly processes.

Maximum Power Dissipation (Abs): 0.625 W

Can handle moderate power levels, suitable for many small signal applications.

Maximum Collector-Emitter Voltage: 80 V

Can withstand relatively high voltages, increasing the range of applicable circuits.

Maximum Collector Current (IC): 0.3 A

Capable of handling moderate current levels, suitable for various applications.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC447 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC447 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-14-432-9846, 5961144329846

NIIN

144329846

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20