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BC449ARLRP

Onsemi

BC449ARLRP by Onsemi

BC449ARLRP by Onsemi is a PNP BJT transistor with hFE of 60, VCEO of 100V, and IC of 0.3A. It is used in applications requiring high-speed switching such as amplifiers and signal processing circuits due to its fT of 200MHz. The package style is cylindrical with a plastic/epoxy body material for through-hole mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,349 parts In-Stock

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1,349

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Digiode

USA . 771 parts In-Stock

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771

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Distributors (Availability)

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Native Components

USA . 1 parts In-Stock

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$0.118

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$0.113

1

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$0.113

Northwest PG Solutions

USA . 1,769 parts In-Stock

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$0.130

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$0.115

1,769

$0.130

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$0.115

SupplyDigital Components

Austria . 3,801 parts In-Stock

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Kulean Microsystems

USA . 2,923 parts In-Stock

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2,923

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Problanco Electronics

Mexico . 1,450 parts In-Stock

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1,450

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UHIMA Technologies

Türkiye . 605 parts In-Stock

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605

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Corohmni

South Africa . 330 parts In-Stock

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Corphita

USA . 185 parts In-Stock

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TANS Electronics

Latvia . 140 parts In-Stock

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Overview

Discover the BC449ARLRP by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed to meet your electronic needs. With its reliable manufacturer and PNP configuration, this transistor offers unmatched performance in various applications. From amplifiers to switching circuits, this product provides exceptional value with a DC current gain of 60 and a maximum operating temperature of 150 °C. Trust in Onsemi to deliver top-notch components that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in applications where the load is connected to the collector, making this transistor versatile for different circuit designs.

Configuration: SINGLE

Simplifies circuit design by having only one transistor in the package, making it easier to incorporate into a circuit.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in circular layouts or spaces.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, making it suitable for applications where vibration or mechanical stress is a concern.

No. of Terminals: 3

Having 3 terminals allows for flexible circuit connections and configurations, enabling various circuit designs.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is space-saving and easy to handle, making it ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 60

A higher minimum DC current gain ensures better amplification capabilities and stability in the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures and harsh environmental conditions.

Maximum Collector-Emitter Voltage: 100 V

High maximum collector-emitter voltage rating allows for use in circuits with higher voltage requirements.

Transistor Element Material: SILICON

Silicon transistors offer better performance characteristics and reliability compared to other materials.

Maximum Collector Current (IC): 0.3 A

A high maximum collector current rating allows this transistor to handle higher current loads in the circuit.

Terminal Position: BOTTOM

Bottom terminal position makes it easier for PCB layout and soldering, simplifying the manufacturing process.

Nominal Transition Frequency (fT): 200 MHz

High nominal transition frequency indicates good high-frequency performance, suitable for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC449ARLRP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC449ARLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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