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BC449G

Onsemi

BC449G by Onsemi

BC449G by Onsemi is a NPN BJT with 3 terminals, 1.5W power dissipation, and 100V max collector-emitter voltage. Ideal for applications requiring a single configuration transistor with hFE of 50, operating up to 150 °C. Package style is cylindrical, suitable for through-hole mounting in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 822 parts In-Stock

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Digiode

USA . 589 parts In-Stock

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Native Components

USA . 553 parts In-Stock

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TANS Electronics

Latvia . 5,611 parts In-Stock

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Problanco Electronics

Mexico . 4,842 parts In-Stock

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SupplyDigital Components

Austria . 4,596 parts In-Stock

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Kulean Microsystems

USA . 4,558 parts In-Stock

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Corphita

USA . 2,321 parts In-Stock

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UHIMA Technologies

Türkiye . 777 parts In-Stock

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Corohmni

South Africa . 409 parts In-Stock

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Northwest PG Solutions

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Overview

Enhance your electronic projects with the BC449G by Onsemi, a high-quality NPN Bipolar Junction Transistor perfect for various applications in amplification and switching circuits. Manufactured by Onsemi, a trusted name in semiconductor technology, this small signal BJT offers reliability and performance. With a maximum power dissipation of 1.5W and a maximum collector-emitter voltage of 100V, this transistor provides excellent value and efficiency. Take your designs to the next level with the BC449G and experience the benefits of superior quality and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight, durable, and cost-effective, making the transistor easy to handle and suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance and reliability.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to integrate into existing systems.

Package Shape: ROUND

Round package shape allows for easy mounting and handling, making it ideal for applications where space is limited.

Maximum Power Dissipation (Abs): 1.5 W

With a high power dissipation capability, this transistor can handle moderate power levels without overheating, ensuring reliable operation.

Minimum DC Current Gain (hFE): 50

A minimum hFE of 50 ensures consistent and predictable amplification performance, making this transistor suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising its performance or reliability.

Maximum Collector-Emitter Voltage: 100 V

A high maximum collector-emitter voltage rating allows the transistor to handle higher voltage levels, making it suitable for a variety of voltage requirements.

Transistor Element Material: SILICON

Silicon transistors offer excellent performance characteristics, such as low leakage current and high breakdown voltage, making them a reliable choice for a wide range of applications.

Maximum Collector Current (IC): 0.3 A

With a maximum collector current of 0.3 A, this transistor can handle moderate current levels, making it suitable for various amplification and switching applications.

Nominal Transition Frequency (fT): 200 MHz

A high transition frequency allows this transistor to operate at higher frequencies, making it suitable for RF and high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC449G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC449G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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