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BC447RLRM

Onsemi

BC447RLRM by Onsemi

BC447RLRM by Onsemi is a PNP BJT transistor with hFE of 50, VCEO of 80V, and IC of 0.3A. It is used in applications requiring high-speed switching such as amplifiers and signal processing circuits due to its fT of 200MHz. The through-hole package style makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,462 parts In-Stock

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1,462

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Digiode

USA . 498 parts In-Stock

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498

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Distributors (Availability)

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Native Components

USA . 793 parts In-Stock

1+ parts

$1,079.438

100+ parts

$1,057.849

1k+ parts

$1,047.055

10k+ parts

$1,036.260

793

$1,079.438

$1,057.849

$1,047.055

$1,036.260

Northwest PG Solutions

USA . 1,688 parts In-Stock

1+ parts

$1,187.382

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1,688

$1,187.382

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Kulean Microsystems

USA . 7,066 parts In-Stock

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7,066

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TANS Electronics

Latvia . 6,395 parts In-Stock

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6,395

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Problanco Electronics

Mexico . 5,503 parts In-Stock

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5,503

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SupplyDigital Components

Austria . 5,308 parts In-Stock

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Corphita

USA . 1,813 parts In-Stock

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Corohmni

South Africa . 185 parts In-Stock

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UHIMA Technologies

Türkiye . 113 parts In-Stock

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Overview

Unleash the power of innovation with the BC447RLRM by Onsemi, a top-tier manufacturer known for superior quality and reliability. This Small Signal Bipolar Junction Transistor (BJT) offers endless possibilities in applications like amplifiers, switches, and voltage regulators. With its PNP polarity and high DC current gain, this transistor delivers exceptional performance and efficiency. Trust Onsemi to provide cutting-edge technology that exceeds expectations, ensuring seamless integration and optimal functionality. Elevate your projects with the BC447RLRM and experience unparalleled value and precision in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, increasing the durability and reliability of the transistor.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offers compatibility with specific circuit configurations.

Configuration: SINGLE

Simplifies circuit design by using a single transistor in the package, making it more space-efficient and cost-effective.

Package Shape: ROUND

Allows for easy installation and efficient use of space in cylindrical or round-based circuit layouts.

Terminal Form: THROUGH-HOLE

Enables easy soldering and secure connection to the circuit board, ensuring stable performance.

No. of Terminals: 3

Provides necessary connections for base, emitter, and collector, allowing for proper functionality in the circuit.

Package Style (Meter): CYLINDRICAL

Fits well in cylindrical packages or sockets, making it easy to integrate into existing equipment or designs.

Minimum DC Current Gain (hFE): 50

Ensures reliable amplification of signals in a circuit, offering consistent performance over a range of input levels.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 80 V

Can handle higher voltages, providing versatility in circuit design and compatibility with various power sources.

Transistor Element Material: SILICON

Offers good performance and reliability, common material choice for transistors due to its electrical properties.

Maximum Collector Current (IC): 0.3 A

Capable of handling moderate current levels, suitable for small signal applications where current flow is limited.

Terminal Position: BOTTOM

Facilitates easy mounting and connections on the circuit board, ensuring proper alignment and efficient layout.

Nominal Transition Frequency (fT): 200 MHz

Provides high frequency capability, ideal for applications requiring fast switching or amplification of high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC447RLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC447RLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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