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BC449ARL1

Onsemi

BC449ARL1 by Onsemi

BC449ARL1 by Onsemi is a PNP BJT transistor with hFE of 60, VCEO of 100V, and IC of 0.3A. It is used in applications requiring high frequency operation up to 200MHz, such as amplifiers and signal processing circuits due to its small package size and through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,968 parts In-Stock

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Vyrian

USA . 181 parts In-Stock

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Native Components

USA . 345 parts In-Stock

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$84.930

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$81.533

345

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Northwest PG Solutions

USA . 401 parts In-Stock

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$93.423

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Kulean Microsystems

USA . 6,339 parts In-Stock

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Problanco Electronics

Mexico . 3,591 parts In-Stock

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TANS Electronics

Latvia . 2,549 parts In-Stock

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SupplyDigital Components

Austria . 678 parts In-Stock

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Corohmni

South Africa . 498 parts In-Stock

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Corphita

USA . 410 parts In-Stock

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UHIMA Technologies

Türkiye . 255 parts In-Stock

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Overview

Discover the Onsemi BC449ARL1, a high-quality PNP Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in semiconductor technology, this transistor is perfect for a wide range of applications. With a minimum DC current gain of 60 and a maximum operating temperature of 150 °C, this transistor provides excellent functionality and efficiency. Whether you're looking to enhance your audio amplifiers or improve signal processing in your electronic devices, the BC449ARL1 delivers value, benefits, and advantages that will exceed your expectations. Choose Onsemi for superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package material is lightweight and resistant to impact, making the transistor durable and suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are known for their high input impedance and low output impedance, making them efficient for amplification purposes.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuits, simplifying the design process.

Package Shape: ROUND

Round package shape provides uniform stress distribution, enhancing the reliability and stability of the transistor.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it easy to solder the transistor onto a PCB, ensuring secure connections.

No. of Terminals: 3

With 3 terminals, this transistor can be easily connected in a circuit to perform various functions.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is compact and efficient for space-saving applications.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures reliable amplification and signal processing capabilities.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments.

Maximum Collector-Emitter Voltage: 100 V

A high maximum collector-emitter voltage of 100V allows for versatile applications in different voltage ranges.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its reliability and efficiency in transistor applications.

Maximum Collector Current (IC): 0.3 A

With a maximum collector current of 0.3A, this transistor can handle moderate power levels.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and connection, making installation easier.

Nominal Transition Frequency (fT): 200 MHz

A high nominal transition frequency of 200MHz indicates good high-frequency performance, ideal for signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC449ARL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC449ARL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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