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BC447RLRP

Onsemi

BC447RLRP by Onsemi

BC447RLRP by Onsemi is a PNP BJT transistor with hFE of 50, VCEO of 80V, and IC of 0.3A. It is used in applications requiring high frequency performance up to 200MHz, such as signal amplification in electronic circuits due to its single configuration and through-hole terminal form.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,047 parts In-Stock

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Vyrian

USA . 450 parts In-Stock

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450

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SupplyDigital Components

Austria . 4,410 parts In-Stock

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Kulean Microsystems

USA . 3,861 parts In-Stock

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Problanco Electronics

Mexico . 3,677 parts In-Stock

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Northwest PG Solutions

USA . 1,079 parts In-Stock

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UHIMA Technologies

Türkiye . 976 parts In-Stock

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Native Components

USA . 966 parts In-Stock

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Corphita

USA . 747 parts In-Stock

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Corohmni

South Africa . 410 parts In-Stock

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TANS Electronics

Latvia . 188 parts In-Stock

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Overview

Experience superior performance and reliability with the BC447RLRP by Onsemi, a leading manufacturer known for innovative technology. This Small Signal Bipolar Junction Transistor (BJT) is perfect for a wide range of applications, offering unmatched value and benefits to our customers. Trust in the quality of Onsemi products and elevate your projects with the BC447RLRP's high efficiency and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body offers durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits where PNP transistors are required, providing versatility for different design requirements.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use in various electronic applications.

Package Shape: ROUND

The round shape of the package offers uniformity and ease of mounting, facilitating efficient assembly processes.

Terminal Form: THROUGH-HOLE

The through-hole terminals allow for secure connections onto the circuit board, ensuring reliable operation in different environments.

No. of Terminals: 3

With three terminals, this transistor can be easily connected in circuits, providing flexibility for different circuit configurations.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers compactness and space-saving benefits, making it suitable for applications where size is a factor.

Minimum DC Current Gain (hFE): 50

The minimum DC current gain of 50 ensures reliable amplification of signals, making this transistor suitable for signal processing applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments, ensuring stable performance.

Maximum Collector-Emitter Voltage: 80 V

The maximum collector-emitter voltage of 80 V allows for handling of higher voltages, making this transistor suitable for power applications.

Transistor Element Material: SILICON

Silicon material in the transistor element ensures high performance and reliability, making it a durable choice for long-term use.

Maximum Collector Current (IC): 0.3 A

With a maximum collector current of 0.3 A, this transistor can handle moderate current loads, making it suitable for various electronic circuits.

Terminal Position: BOTTOM

The bottom terminal position provides easy access for soldering and connection, facilitating smooth integration into circuit boards.

Nominal Transition Frequency (fT): 200 MHz

The nominal transition frequency of 200 MHz indicates high-speed operation, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC447RLRP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC447RLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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