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BC449A

Onsemi

BC449A by Onsemi

BC449A by Onsemi is a NPN BJT with 3 terminals and max IC of 0.3A. It has hFE of 60, fT of 200MHz, and VCE of 100V. Ideal for small signal applications requiring high transition frequency in a cylindrical package with through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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ACDS - Activité Composants Distribution Service

France . 3,527 parts In-Stock

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Digiode

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Vyrian

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Manotoh

Italy . 399 parts In-Stock

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ECAB

Sweden . 41 parts In-Stock

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Native Components

USA . 598 parts In-Stock

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$0.291

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$0.280

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Northwest PG Solutions

USA . 1,379 parts In-Stock

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$0.320

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$0.282

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Component Stockers USA

USA . 276 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 21,419 parts In-Stock

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Kulean Microsystems

USA . 7,866 parts In-Stock

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Problanco Electronics

Mexico . 7,239 parts In-Stock

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SupplyDigital Components

Austria . 7,177 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Perfect Parts

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UHIMA Technologies

Türkiye . 929 parts In-Stock

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TANS Electronics

Latvia . 798 parts In-Stock

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Corphita

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Corohmni

South Africa . 131 parts In-Stock

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Overview

Upgrade your electronic projects with the BC449A small signal bipolar junction transistor by Onsemi. Manufactured with top-quality materials and designed for reliability, this NPN transistor offers superior performance in a variety of applications. From amplifiers to switching circuits, this single configuration transistor provides excellent power dissipation and high DC current gain. With a maximum operating temperature of 150 °C and a peak reflow temperature of 235°C, this transistor is built to last. Trust Onsemi to deliver cutting-edge technology that meets all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and resistance to environmental factors, making this transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into common electronic circuits, offering flexibility and compatibility.

Maximum Power Dissipation: 0.625 W

High maximum power dissipation ensures reliable performance under varying load conditions, making this transistor ideal for power management applications.

Nominal Transition Frequency: 200 MHz

High transition frequency allows for fast switching speeds and excellent high-frequency performance, making this transistor suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC449A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC449A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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