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BC449ARLRE

Onsemi

BC449ARLRE by Onsemi

BC449ARLRE by Onsemi is a PNP BJT transistor with hFE of 60, VCE of 100V, and IC of 0.3A. It is used in applications requiring high-speed switching such as amplifiers and signal processing circuits due to its fT of 200MHz. The through-hole cylindrical package makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,668 parts In-Stock

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Vyrian

USA . 1,207 parts In-Stock

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Problanco Electronics

Mexico . 6,355 parts In-Stock

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SupplyDigital Components

Austria . 6,114 parts In-Stock

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Kulean Microsystems

USA . 2,775 parts In-Stock

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TANS Electronics

Latvia . 2,447 parts In-Stock

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Northwest PG Solutions

USA . 1,668 parts In-Stock

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Corphita

USA . 993 parts In-Stock

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Corohmni

South Africa . 452 parts In-Stock

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Native Components

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UHIMA Technologies

Türkiye . 251 parts In-Stock

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Overview

Enhance your electronic projects with the reliable BC449ARLRE by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, known for their superior products, this PNP transistor offers exceptional performance and durability. Ideal for a variety of applications, from signal amplification to voltage regulation, this transistor is a must-have for any electronics enthusiast. Experience the value and benefits of using the BC449ARLRE in your next project and see the difference it makes in achieving your desired results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the transistor, making it long-lasting.

Polarity or Channel Type: PNP

PNP transistors are commonly used for high power applications, making this transistor suitable for such uses.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use.

Package Shape: ROUND

The round shape allows for easy mounting and integration into circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong connection and are easier to solder compared to surface mount terminals.

No. of Terminals: 3

Having 3 terminals allows for versatility in circuit connections.

Package Style (Meter): CYLINDRICAL

The cylindrical package style makes the transistor easy to handle and mount in various applications.

Minimum DC Current Gain (hFE): 60

A high DC current gain ensures amplification capabilities for the transistor.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand heat in various environments.

Maximum Collector-Emitter Voltage: 100 V

The high maximum collector-emitter voltage makes this transistor suitable for high voltage applications.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistors, providing good performance and durability.

Maximum Collector Current (IC): 0.3 A

The maximum collector current of 0.3 A allows the transistor to handle moderate power loads.

Terminal Position: BOTTOM

Having terminals at the bottom simplifies PCB layout and allows for efficient heat dissipation.

Nominal Transition Frequency (fT): 200 MHz

The high nominal transition frequency indicates the transistor's capability to switch quickly, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC449ARLRE attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC449ARLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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