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BC449

Onsemi

BC449 by Onsemi

BC449 by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W and max. collector-emitter voltage of 100V. It has a min. DC current gain of 50, making it suitable for applications requiring high frequency operation up to 200MHz in cylindrical package style.

Median Price

$0.079

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,800 parts In-Stock

1+ parts

-

100+ parts

$0.079

1k+ parts

$0.066

10k+ parts

$0.059

1,800

-

$0.079

$0.066

$0.059

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,776 parts In-Stock

1+ parts

$0.062

100+ parts

-

1k+ parts

-

10k+ parts

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1,776

$0.062

-

-

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Vyrian

USA . 1,010 parts In-Stock

1+ parts

$0.065

100+ parts

-

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-

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-

1,010

$0.065

-

-

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American Microsemiconductor Inc.

USA . 2,570 parts In-Stock

1+ parts

$1.890

100+ parts

-

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2,570

$1.890

-

-

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ACDS - Activité Composants Distribution Service

France . 4,751 parts In-Stock

1+ parts

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4,751

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Ashlea Components Ltd

UK . 3,630 parts In-Stock

1+ parts

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3,630

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ComSIT Distribution GmbH

Germany . 1,643 parts In-Stock

1+ parts

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1,643

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Corel Iberica Componentes, S.L.

Spain . 957 parts In-Stock

1+ parts

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957

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J2 Sourcing AB

Sweden . 661 parts In-Stock

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661

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ECAB

Sweden . 278 parts In-Stock

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278

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Fibra_Brandt Electronic GMBH

Germany . 197 parts In-Stock

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197

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GES GmbH

Germany . 37 parts In-Stock

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37

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ABC Electronics Ltd.

UK . 30 parts In-Stock

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30

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LittleDiode

UK . 24 parts In-Stock

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24

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 764 parts In-Stock

1+ parts

$0.058

100+ parts

-

1k+ parts

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764

$0.058

-

-

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Corohmni

South Africa . 478 parts In-Stock

1+ parts

$0.065

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478

$0.065

-

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Native Components

USA . 664 parts In-Stock

1+ parts

$0.267

100+ parts

-

1k+ parts

-

10k+ parts

$0.256

664

$0.267

-

-

$0.256

Northwest PG Solutions

USA . 70 parts In-Stock

1+ parts

$0.294

100+ parts

-

1k+ parts

-

10k+ parts

$0.259

70

$0.294

-

-

$0.259

TANS Electronics

Latvia . 6,506 parts In-Stock

1+ parts

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6,506

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Kulean Microsystems

USA . 2,778 parts In-Stock

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2,778

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QUARKTWIN TECHNOLOGY LTD

USA . 2,728 parts In-Stock

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2,728

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SupplyDigital Components

Austria . 1,443 parts In-Stock

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1,443

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Assy Fe

Spain . 1,152 parts In-Stock

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1,152

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Problanco Electronics

Mexico . 1,041 parts In-Stock

1+ parts

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1,041

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UHIMA Technologies

Türkiye . 537 parts In-Stock

1+ parts

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537

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Overview

Experience superior performance and reliability with the BC449 small signal bipolar junction transistor by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality products that are perfect for a wide range of applications. Whether you need precise amplification or switching capabilities, this NPN transistor offers exceptional value, benefits, and advantages. With a maximum operating temperature of 150 °C and a peak reflow temperature of 235°C, the BC449 ensures seamless functionality and durability. Trust Onsemi to provide the best solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility and flexibility in design.

Configuration: SINGLE

Simplified design with single configuration makes it easy to use and integrate into circuitry.

Package Shape: ROUND

Round shape allows for easy mounting and installation in various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong connections and ease of soldering, ensuring reliable performance.

Maximum Power Dissipation (Abs): 0.625 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating.

Maximum Operating Temperature: 150 °C

Can operate efficiently at higher temperatures, suitable for a wide range of operating environments.

Maximum Collector-Emitter Voltage: 100 V

Capable of handling high voltage applications, providing versatility in circuit design.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures reliable amplification and signal processing.

Maximum Collector Current (IC): 0.3 A

Can handle moderate current levels, making it suitable for various low to medium power applications.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC449 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC449 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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