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BC447RLRA

Onsemi

BC447RLRA by Onsemi

BC447RLRA by Onsemi is a PNP BJT transistor with hFE of 50, VCEO of 80V, and IC of 0.3A. It is used in applications requiring high-speed switching such as amplifiers and signal processing circuits due to its fT of 200MHz. The through-hole package style makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,049 parts In-Stock

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1,049

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Digiode

USA . 568 parts In-Stock

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568

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SupplyDigital Components

Austria . 7,459 parts In-Stock

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7,459

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Problanco Electronics

Mexico . 5,124 parts In-Stock

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Kulean Microsystems

USA . 3,657 parts In-Stock

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TANS Electronics

Latvia . 1,712 parts In-Stock

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Corphita

USA . 878 parts In-Stock

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878

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Native Components

USA . 591 parts In-Stock

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Northwest PG Solutions

USA . 297 parts In-Stock

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UHIMA Technologies

Türkiye . 265 parts In-Stock

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Corohmni

South Africa . 169 parts In-Stock

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Overview

The BC447RLRA by Onsemi is a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is perfect for a wide range of applications. Its compact design and high DC current gain make it ideal for use in various electronic circuits. With a maximum operating temperature of 150 °C and a collector-emitter voltage of 80V, the BC447RLRA provides customers with exceptional value and unmatched benefits. Trust Onsemi to deliver top-notch products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy packaging provides good insulation and protection, ensuring reliability and durability in various operating conditions.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into existing circuits and can be used for complementary applications.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation, making it user-friendly for hobbyists and professionals alike.

Package Shape: ROUND

Round package shape allows for easy mounting and installation, making it suitable for various applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering, making it suitable for manual assembly.

No. of Terminals: 3

Having 3 terminals allows for flexibility in circuit connections and enables various configurations for different applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers compactness and ease of handling, making it suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures reliable amplification and signal processing capabilities, making it suitable for low-power applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C ensures stable performance even in harsh environments, increasing reliability for various applications.

Maximum Collector-Emitter Voltage: 80 V

High maximum collector-emitter voltage of 80V allows for safe operation in high voltage applications, providing versatility in circuit design.

Transistor Element Material: SILICON

Silicon transistor element material offers high efficiency and performance, making it a reliable choice for a wide range of applications.

Maximum Collector Current (IC): 0.3 A

Maximum collector current of 0.3A allows for handling moderate current levels, making it suitable for low to medium power applications.

Terminal Position: BOTTOM

Bottom terminal position enables easy PCB mounting and soldering, facilitating efficient assembly and integration into circuits.

Nominal Transition Frequency (fT): 200 MHz

High nominal transition frequency of 200MHz enables fast switching speeds and high-frequency operation, suitable for RF and high-speed signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC447RLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC447RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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