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BC449ARLRM

Onsemi

BC449ARLRM by Onsemi

BC449ARLRM by Onsemi is a PNP BJT with hFE of 60, VCEO of 100V, and IC of 0.3A. Ideal for applications requiring high frequency performance up to 200MHz in a cylindrical package style. Suitable for small signal amplification in electronic circuits due to its single configuration and through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,487 parts In-Stock

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Digiode

USA . 1,625 parts In-Stock

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1,625

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Kulean Microsystems

USA . 3,014 parts In-Stock

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TANS Electronics

Latvia . 2,739 parts In-Stock

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Northwest PG Solutions

USA . 1,458 parts In-Stock

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Corphita

USA . 1,254 parts In-Stock

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SupplyDigital Components

Austria . 857 parts In-Stock

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Native Components

USA . 353 parts In-Stock

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Problanco Electronics

Mexico . 216 parts In-Stock

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Corohmni

South Africa . 74 parts In-Stock

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UHIMA Technologies

Türkiye . 4 parts In-Stock

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Overview

Experience superior performance and reliability with the BC449ARLRM by Onsemi, a leading manufacturer in the industry. This Small Signal Bipolar Junction Transistor (BJT) offers endless possibilities for applications in various electronic devices. With its durable plastic/epoxy package body material and PNP polarity, this transistor ensures seamless integration and efficient operation. Trust in Onsemi's reputation for excellence and innovation as you unlock the full potential of your projects with the BC449ARLRM. Explore the endless benefits and value that this product brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring long-term durability and reliability.

Polarity or Channel Type: PNP

Suitable for various circuit applications where PNP transistors are required.

Configuration: SINGLE

Simplifies circuit design and integration.

Package Shape: ROUND

Allows for easy mounting and assembly in round-shaped spaces or enclosures.

Terminal Form: THROUGH-HOLE

Facilitates easy and secure soldering onto circuit boards.

No. of Terminals: 3

Provides necessary connections for proper transistor operation.

Package Style (Meter): CYLINDRICAL

Fits well in cylindrical packages or housings.

Minimum DC Current Gain (hFE): 60

Ensures consistent and stable amplification of current in the transistor.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 100 V

Suitable for applications requiring high voltage handling capability.

Transistor Element Material: SILICON

Provides reliable performance and low leakage current.

Maximum Collector Current (IC): 0.3 A

Can handle moderate current levels in the circuit without overheating.

Terminal Position: BOTTOM

Allows for easy positioning and mounting on circuit boards.

Nominal Transition Frequency (fT): 200 MHz

Offers good frequency response for high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC449ARLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC449ARLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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