Loading...

BC447RL1

Onsemi

BC447RL1 by Onsemi

BC447RL1 by Onsemi is a PNP BJT transistor with hFE of 50, VCEO of 80V, and IC of 0.3A. Ideal for applications requiring high frequency operation up to 200MHz in a cylindrical package with through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,452 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,452

-

-

-

-

Vyrian

USA . 2,409 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,409

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Problanco Electronics

Mexico . 7,977 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,977

-

-

-

-

Kulean Microsystems

USA . 4,265 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,265

-

-

-

-

TANS Electronics

Latvia . 1,781 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,781

-

-

-

-

SupplyDigital Components

Austria . 1,736 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,736

-

-

-

-

Northwest PG Solutions

USA . 828 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

828

-

-

-

-

Native Components

USA . 642 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

642

-

-

-

-

Corohmni

South Africa . 457 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

457

-

-

-

-

UHIMA Technologies

Türkiye . 293 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

293

-

-

-

-

Corphita

USA . 154 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

154

-

-

-

-

Overview

Discover the BC447RL1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed for a wide range of applications. With its reliable manufacturer and durable plastic/epoxy construction, this PNP transistor offers customers exceptional value and performance. Whether you're working on audio amplifiers, voltage regulators, or signal processing circuits, the BC447RL1 provides seamless operation and long-lasting reliability. Upgrade your projects with this versatile transistor today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this transistor lightweight and durable.

Polarity or Channel Type: PNP

PNP transistors are suitable for applications where current flows from emitter to collector, making this transistor ideal for specific circuit requirements.

Minimum DC Current Gain (hFE): 50

With a minimum DC current gain of 50, this transistor provides consistent amplification of input signals.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows this transistor to operate effectively in a wide range of temperature environments.

Maximum Collector-Emitter Voltage: 80 V

The 80V maximum collector-emitter voltage rating ensures the transistor can handle higher voltage levels safely.

Maximum Collector Current (IC): 0.3 A

With a maximum collector current of 0.3A, this transistor is suitable for low-power applications.

Nominal Transition Frequency (fT): 200 MHz

The high nominal transition frequency of 200MHz indicates the transistor's ability to switch rapidly between on and off states, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC447RL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC447RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20