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BC449ARL

Onsemi

BC449ARL by Onsemi

BC449ARL by Onsemi is a PNP BJT transistor with hFE of 60, VCE of 100V, and IC of 0.3A. It is used in applications requiring high-speed switching such as amplifiers and signal processing circuits due to its fT of 200MHz. The package style is cylindrical with a plastic/epoxy body material for through-hole mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,497 parts In-Stock

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Vyrian

USA . 975 parts In-Stock

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975

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Distributors (Availability)

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Native Components

USA . 603 parts In-Stock

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$0.092

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$0.088

603

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$0.088

Northwest PG Solutions

USA . 1,554 parts In-Stock

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$0.101

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$0.089

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$0.089

Kulean Microsystems

USA . 8,311 parts In-Stock

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SupplyDigital Components

Austria . 6,390 parts In-Stock

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6,390

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Problanco Electronics

Mexico . 4,883 parts In-Stock

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Corphita

USA . 2,456 parts In-Stock

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2,456

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TANS Electronics

Latvia . 1,889 parts In-Stock

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UHIMA Technologies

Türkiye . 956 parts In-Stock

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Corohmni

South Africa . 356 parts In-Stock

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Overview

Discover the BC449ARL by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this PNP transistor is perfect for a wide range of applications. With a minimum DC current gain of 60 and a maximum operating temperature of 150 °C, this transistor provides excellent efficiency and durability. Whether you're working on audio amplifiers, voltage regulators, or other electronic projects, the BC449ARL delivers value, benefits, and advantages that exceed expectations. Upgrade your designs with the BC449ARL and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides good electrical insulation and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy incorporation into circuits requiring PNP transistors, expanding the versatility of the product.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making the transistor easy to use for various applications.

Package Shape: ROUND

The round package shape ensures easy mounting and handling of the transistor, making it convenient for assembly.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a secure and reliable connection, ensuring stability in circuit connections.

No. of Terminals: 3

The three terminals allow for versatile connection options, enabling flexibility in circuit design.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers compactness and efficient use of space, making it suitable for applications with limited space.

Minimum DC Current Gain (hFE): 60

The minimum DC current gain of 60 ensures consistent and reliable performance in amplification applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows for reliable operation in demanding environments.

Maximum Collector-Emitter Voltage: 100 V

The maximum collector-emitter voltage of 100V provides a wide range of voltage handling capabilities for different applications.

Transistor Element Material: SILICON

The silicon transistor element material offers high performance and durability, ensuring long-term reliability in operation.

Maximum Collector Current (IC): 0.3 A

The maximum collector current of 0.3A allows for handling moderate current levels in various circuit applications.

Terminal Position: BOTTOM

The bottom terminal position offers convenient and easy mounting options, facilitating integration into circuit designs.

Nominal Transition Frequency (fT): 200 MHz

The high nominal transition frequency of 200MHz enables fast switching speeds and high-frequency operation in amplification circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC449ARL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC449ARL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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