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BC449AG

Onsemi

BC449AG by Onsemi

BC449AG by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 1.5W, and hFE of 60. Ideal for applications requiring a max collector-emitter voltage of 100V, such as amplifiers or signal processing circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,569 parts In-Stock

1+ parts

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1,569

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Digiode

USA . 575 parts In-Stock

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575

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 585 parts In-Stock

1+ parts

$0.474

100+ parts

-

1k+ parts

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10k+ parts

$0.455

585

$0.474

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$0.455

Northwest PG Solutions

USA . 497 parts In-Stock

1+ parts

$0.522

100+ parts

-

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$0.460

497

$0.522

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$0.460

Kulean Microsystems

USA . 8,146 parts In-Stock

1+ parts

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8,146

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TANS Electronics

Latvia . 5,693 parts In-Stock

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5,693

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Problanco Electronics

Mexico . 2,562 parts In-Stock

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2,562

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SupplyDigital Components

Austria . 2,550 parts In-Stock

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2,550

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Corphita

USA . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 659 parts In-Stock

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659

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Corohmni

South Africa . 176 parts In-Stock

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Overview

Enhance your electronic projects with the BC449AG by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by the trusted brand Onsemi, this NPN transistor offers exceptional performance and reliability. Perfect for various applications, this transistor is designed to deliver superior power dissipation, high collector-emitter voltage, and excellent transition frequency. Upgrade your designs with the BC449AG and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in circuit design.

Configuration: SINGLE

Simplified circuit design with a single transistor configuration.

Package Shape: ROUND

Round package shape allows for easy mounting and soldering on circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals facilitate easy and secure connections on PCBs.

Maximum Power Dissipation (Abs): 1.5 W

Capable of handling high power dissipation, making it suitable for power applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides efficient thermal dissipation.

Minimum DC Current Gain (hFE): 60

Consistent and reliable amplification performance with a minimum DC current gain of 60.

Maximum Operating Temperature: 150 °C

Can operate reliably in a wide temperature range, making it suitable for various environments.

Maximum Collector-Emitter Voltage: 100 V

Allows for high collector-emitter voltage applications.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability in transistor operations.

Maximum Collector Current (IC): 0.3 A

Capable of handling moderate collector current, suitable for small-signal applications.

Terminal Finish: TIN SILVER COPPER

High-quality terminal finish ensures excellent electrical conductivity and reliability.

Terminal Position: BOTTOM

Bottom terminal position for convenient and secure mounting on PCBs.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for high-frequency signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC449AG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC449AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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