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BC447RLRE

Onsemi

BC447RLRE by Onsemi

BC447RLRE by Onsemi is a PNP BJT with hFE of 50, VCEO of 80V, and IC of 0.3A. Ideal for applications requiring high-speed switching in electronic circuits due to its fT of 200MHz. Its through-hole package makes it suitable for various small signal amplification tasks.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,451 parts In-Stock

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Vyrian

USA . 821 parts In-Stock

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Kulean Microsystems

USA . 5,803 parts In-Stock

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Problanco Electronics

Mexico . 2,117 parts In-Stock

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SupplyDigital Components

Austria . 1,210 parts In-Stock

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Corphita

USA . 1,162 parts In-Stock

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Northwest PG Solutions

USA . 989 parts In-Stock

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TANS Electronics

Latvia . 555 parts In-Stock

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UHIMA Technologies

Türkiye . 281 parts In-Stock

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Corohmni

South Africa . 269 parts In-Stock

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Native Components

USA . 73 parts In-Stock

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Overview

Unleash the power of innovation with the BC447RLRE by Onsemi, a top-tier manufacturer known for exceptional quality and reliability. This Small Signal Bipolar Junction Transistor (BJT) in PNP configuration offers endless possibilities in various applications. From amplifying signals to controlling electrical currents, this product provides unparalleled value and performance. Elevate your projects with the superior benefits and advantages that the BC447RLRE brings to the table, and experience the difference that only Onsemi can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor suitable for a variety of applications while still being cost-effective.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits that require this type of transistor, providing a versatile option for different design requirements.

Configuration: SINGLE

Having a single configuration simplifies the design and wiring process, making it easier to incorporate this transistor into circuits without added complexity.

Package Shape: ROUND

The round shape of the package allows for easy mounting and placement within PCB layouts, optimizing space utilization and facilitating efficient circuit design.

Minimum DC Current Gain (hFE): 50

With a minimum hFE of 50, this transistor provides consistent and reliable amplification of current signals, ensuring stable performance in various circuit applications.

Maximum Operating Temperature: 150 °C

The high operating temperature rating of 150 °C allows the transistor to withstand elevated temperatures, enhancing its reliability and longevity in demanding environments.

Maximum Collector-Emitter Voltage: 80 V

The high maximum voltage rating of 80 volts provides ample headroom for voltage spikes or fluctuations, ensuring the transistor can handle a wide range of voltage levels without compromising performance.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material, offering excellent performance characteristics such as high efficiency, stability, and durability, making it a preferred choice for transistor fabrication.

Maximum Collector Current (IC): 0.3 A

The maximum collector current rating of 0.3 amps allows the transistor to handle moderate current loads, making it suitable for various signal amplification and switching applications.

Nominal Transition Frequency (fT): 200 MHz

With a high nominal transition frequency of 200 MHz, this transistor can efficiently amplify high-frequency signals, making it ideal for applications that require fast switching and signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC447RLRE attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC447RLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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