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BC447RL

Onsemi

BC447RL by Onsemi

BC447RL by Onsemi is a PNP BJT with hFE of 50, VCEO of 80V, and IC of 0.3A. Ideal for applications requiring high-speed switching in electronic circuits due to its fT of 200MHz. Its through-hole package makes it suitable for various small signal amplification tasks.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,051 parts In-Stock

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Digiode

USA . 655 parts In-Stock

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Kulean Microsystems

USA . 5,093 parts In-Stock

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Problanco Electronics

Mexico . 4,713 parts In-Stock

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TANS Electronics

Latvia . 3,737 parts In-Stock

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SupplyDigital Components

Austria . 3,633 parts In-Stock

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UHIMA Technologies

Türkiye . 970 parts In-Stock

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Native Components

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Corphita

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Northwest PG Solutions

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Corohmni

South Africa . 303 parts In-Stock

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Overview

Elevate your projects with the BC447RL by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that delivers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is perfect for a variety of applications. With a maximum operating temperature of 150 °C and a nominal transition frequency of 200 MHz, this transistor offers unmatched value and benefits to customers. Upgrade your electronics with the BC447RL and experience enhanced efficiency and functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the transistor durable and resistant to external damage, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are often used in high-side switching applications, making this product suitable for various circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in various electronic projects.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage allows for handling higher voltage applications, increasing the versatility of this transistor.

Nominal Transition Frequency (fT): 200 MHz

The high nominal transition frequency ensures fast switching speeds, making this transistor ideal for applications requiring high frequencies.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC447RL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC447RL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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