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NO Small Signal Bipolar Junction Transistors (BJT) 481

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DTC143TSATP by ROHM

DTC143TSATP

ROHM

ROHM DTC143TSATP is a NPN BJT transistor with VCEsat of 0.3V, hFE of 100, and IC of 0.1A. Ideal for switching applications with max operating temp of 150°C. Package style: IN-LINE, terminal form: THROUGH-HOLE, and terminal finish: TIN SILVER COPPER.

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PSIP-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

.3 W

Not Qualified

BIP General Purpose Small Signal

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

250 MHz

.3 V

2SD2144STPW by ROHM

2SD2144STPW

ROHM

ROHM 2SD2144STPW is a NPN BJT transistor with max. power dissipation of 0.3W and min. DC current gain of 1200, ideal for low-power applications. With a max. collector-emitter voltage of 20V and max. collector current of 0.5A, it operates up to 150°C making it suitable for various electronic circuits requiring high frequency operation up to 350MHz in an in-line package style.

.5 A

20 V

SINGLE

1200

R-PSIP-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

NPN

.3 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

350 MHz

STBV42-AP by STMicroelectronics

STBV42-AP

STMicroelectronics

STBV42-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient circuit designs in various electronic devices.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STBV42G-AP by STMicroelectronics

STBV42G-AP

STMicroelectronics

STBV42G-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 1W, and operates up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STBV42G by STMicroelectronics

STBV42G

STMicroelectronics

STBV42G by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for various electronic circuits requiring reliable performance.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STX13003G by STMicroelectronics

STX13003G

STMicroelectronics

STX13003G by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1.5W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient circuit designs in various electronics.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

4700 ns

STBV42 by STMicroelectronics

STBV42

STMicroelectronics

STBV42 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. It has a max. power dissipation of 1W and max. collector current of 1A, suitable for low-power circuits in various electronic devices. The package style is cylindrical with matte tin terminal finish, making it easy to integrate into through-hole PCB designs.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STBV45 by STMicroelectronics

STBV45

STMicroelectronics

STBV45 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 0.75A. It has a min. DC current gain of 5, suitable for switching applications with max. power dissipation of 0.95W in cylindrical package shape.

.75 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.95 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STBV68 by STMicroelectronics

STBV68

STMicroelectronics

STBV68 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 0.6A, ideal for switching applications. It has a min DC current gain of 3 and can handle up to 0.9W power dissipation, suitable for through-hole mounting in various electronic circuits at temperatures up to 150 °C.

.6 A

400 V

SINGLE

3

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.9 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

2STL1525 by STMicroelectronics

2STL1525

STMicroelectronics

2STL1525 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, a collector current of up to 5A, and operates at temperatures up to 150 °C. Its cylindrical package ensures easy integration in various circuits.

5 A

25 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

120 MHz

2STX2220 by STMicroelectronics

2STX2220

STMicroelectronics

2STX2220 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, a collector current of 1.5A, and operates up to 150 °C. Its cylindrical package ensures reliable performance in various electronic circuits.

1.5 A

20 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.9 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STX817A by STMicroelectronics

STX817A

STMicroelectronics

STX817A by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9 W, an operating temp up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for compact electronic circuits.

1.5 A

80 V

SINGLE

25

TO-92

O-PBCY-W3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

.9 W

Not Qualified

Other Transistors

NO

WIRE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

50 MHz

2N4125TFR by Fairchild Semiconductor

2N4125TFR

Fairchild Semiconductor

2N4125TFR by Fairchild Semiconductor is a PNP BJT transistor with a max collector-emitter voltage of 30V and max current of 0.2A. It has a min DC current gain of 25, making it suitable for switching applications with a max power dissipation of 0.35W in cylindrical package style.

.2 A

30 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

2N5089TFR by Fairchild Semiconductor

2N5089TFR

Fairchild Semiconductor

2N5089TFR by Fairchild Semiconductor is a NPN BJT with max. collector-emitter voltage of 25V, hFE of 450, and fT of 50MHz. Ideal for amplifier applications due to its single configuration and max. power dissipation of 0.35W in a cylindrical package with matte tin finish.

LOW NOISE

.1 A

25 V

SINGLE

450

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

2N5089TF by Fairchild Semiconductor

2N5089TF

Fairchild Semiconductor

2N5089TF by Fairchild Semiconductor is a NPN bipolar junction transistor with a min DC current gain of 450 and max collector-emitter voltage of 25V. It is commonly used in amplifier applications due to its high transition frequency of 50MHz, making it suitable for small signal amplification tasks. The package style is cylindrical with a terminal finish of matte tin, providing durability and reliability for through-hole mounting configurations.

LOW NOISE

.1 A

25 V

SINGLE

450

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

BC32725TAR by Fairchild Semiconductor

BC32725TAR

Fairchild Semiconductor

BC32725TAR by Fairchild Semiconductor is a PNP BJT transistor with a max collector-emitter voltage of 45V and a max collector current of 0.8A. It has a min DC current gain of 100, making it suitable for switching applications up to 100MHz. The package style is cylindrical with a plastic/epoxy body material and matte tin terminal finish, featuring through-hole terminals in a round shape.

.8 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

BC547BTAR by Fairchild Semiconductor

BC547BTAR

Fairchild Semiconductor

BC547BTAR by Fairchild Semiconductor is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.625W and max collector-emitter voltage of 45V. Ideal for switching applications, it offers a min DC current gain of 200 and operates at temperatures up to 150°C.

.1 A

45 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

BC547BTFR by Fairchild Semiconductor

BC547BTFR

Fairchild Semiconductor

Fairchild Semiconductor's BC547BTFR is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.625W and operates up to 150°C. Ideal for switching applications, it offers a min DC current gain of 200 and can handle a max collector-emitter voltage of 45V.

.1 A

45 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

BC548CTAR by Fairchild Semiconductor

BC548CTAR

Fairchild Semiconductor

BC548CTAR by Fairchild Semiconductor is a NPN BJT transistor with hFE of 420. It has a max power dissipation of 0.625W and operates up to 150°C. Ideal for switching applications due to its max collector-emitter voltage of 30V and collector current of 0.1A.

.1 A

30 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

BC549CTFR by Fairchild Semiconductor

BC549CTFR

Fairchild Semiconductor

BC549CTFR by Fairchild Semiconductor is a NPN BJT transistor with a max collector-emitter voltage of 30V and max current of 0.1A, ideal for switching applications. It has a min DC current gain of 420 and can handle up to 0.625W power dissipation. The package style is cylindrical with matte tin terminal finish, suitable for through-hole mounting.

LOW NOISE

.1 A

30 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

KSA992PBU by Fairchild Semiconductor

KSA992PBU

Fairchild Semiconductor

Fairchild Semiconductor's KSA992PBU is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It offers a min hFE of 200 and can handle a max collector current of 0.05A. With a max power dissipation of 0.5W and operating temperature up to 150°C, it is suitable for various electronic circuits requiring high gain and low power consumption.

LOW NOISE

.05 A

120 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

KSA992PTA by Fairchild Semiconductor

KSA992PTA

Fairchild Semiconductor

Fairchild Semiconductor's KSA992PTA is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. With a max power dissipation of 0.5W and max collector-emitter voltage of 120V, it operates at up to 150°C. Featuring a min hFE of 200 and fT of 100MHz, this transistor is housed in a cylindrical package suitable for through-hole mounting.

LOW NOISE

.05 A

120 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

MAT01AHZ by Analog Devices

MAT01AHZ

Analog Devices

MAT01AHZ by Analog Devices is a NPN BJT with 2 elements, VCEsat of 0.2V, and hFE of 500. Ideal for applications requiring high DC current gain and low collector-emitter voltage. With a max operating temp of 150 °C, it's suitable for circuits demanding precision and reliability.

LOW NOISE

SUBSTRATE

.025 A

45 V

SEPARATE, 2 ELEMENTS

500

TO-78

O-MBCY-W6

e4

2

6

150 Cel

METAL

ROUND

CYLINDRICAL

NPN

1.8 W

1.8 W

Not Qualified

Other Transistors

NO

NICKEL PALLADIUM GOLD

WIRE

BOTTOM

SILICON

450 MHz

.2 V

MAT01GHZ by Analog Devices

MAT01GHZ

Analog Devices

MAT01GHZ by Analog Devices is a NPN BJT with 2 elements, VCEsat of 0.25V, and hFE of 250. Ideal for applications requiring high frequency performance up to 450MHz, such as RF amplifiers or oscillators. With a max operating temperature of 150°C and collector-emitter voltage of 45V, it offers reliable performance in various electronic circuits.

LOW NOISE

SUBSTRATE

.025 A

45 V

SEPARATE, 2 ELEMENTS

250

TO-78

O-MBCY-W6

e4

2

6

150 Cel

METAL

ROUND

CYLINDRICAL

NPN

1.8 W

1.8 W

Not Qualified

Other Transistors

NO

NICKEL PALLADIUM GOLD

WIRE

BOTTOM

SILICON

450 MHz

.25 V

MAT03EHZ by Analog Devices

MAT03EHZ

Analog Devices

MAT03EHZ by Analog Devices is a PNP BJT with 2 elements and built-in diode. It has a max VCEsat of 0.1V, hFE of 100, and operates up to 150 °C. Ideal for amplifier applications due to its high transition frequency of 190MHz and low collector-emitter voltage of 36V.

LOW NOISE

.02 A

36 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

100

TO-78

O-MBCY-W6

e4

2

6

150 Cel

METAL

ROUND

CYLINDRICAL

PNP

Not Qualified

NO

GOLD

WIRE

BOTTOM

AMPLIFIER

SILICON

190 MHz

.1 V

MAT03FHZ by Analog Devices

MAT03FHZ

Analog Devices

MAT03FHZ by Analog Devices is a PNP BJT with 2 elements and built-in diode. It has a VCEsat of 0.1V, hFE of 80, and operates up to 150 °C. Ideal for amplifier applications due to its high transition frequency of 190MHz and low collector-emitter voltage of 36V.

LOW NOISE

.02 A

36 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

80

TO-78

O-MBCY-W6

e4

2

6

150 Cel

METAL

ROUND

CYLINDRICAL

PNP

Not Qualified

NO

GOLD

WIRE

BOTTOM

AMPLIFIER

SILICON

190 MHz

.1 V

ZTX450-AP by Micro Commercial Components

ZTX450-AP

Micro Commercial Components

ZTX450-AP by Micro Commercial Components is a NPN BJT with hFE of 15, VCEO of 45V, and IC of 1A. Ideal for applications requiring high-speed switching in electronic circuits due to its fT of 150MHz. Package style: cylindrical, terminals: through-hole, making it suitable for various electronic designs.

1 A

45 V

SINGLE

15

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

10

SILICON

150 MHz

PDTB123ES,126 by NXP Semiconductors

PDTB123ES,126

NXP Semiconductors

PNP; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 40; No. of Elements: 1;

.5 A

40

1

PNP

.5 W

BIP General Purpose Small Signal

NO

SILICON

PDTD113ES,126 by NXP Semiconductors

PDTD113ES,126

NXP Semiconductors

NPN; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1; Transistor Element Material: SILICON;

.5 A

33

1

NPN

.5 W

BIP General Purpose Small Signal

NO

SILICON

2N3904,116 by NXP Semiconductors

2N3904,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Transistor Element Material: SILICON;

.2 A

4 pF

40 V

SINGLE

30

TO-92

O-PBCY-T3

e3

NOT APPLICABLE

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

300 MHz

240 ns

65 ns

.3 V

2N3904,412 by NXP Semiconductors

2N3904,412

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;

.2 A

4 pF

40 V

SINGLE

30

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

.5 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

300 MHz

240 ns

65 ns

.3 V

2N3906,116 by NXP Semiconductors

2N3906,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;

.2 A

4.5 pF

40 V

SINGLE

30

TO-92

O-PBCY-T3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

.5 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

250 MHz

300 ns

65 ns

.4 V

2N4401,116 by NXP Semiconductors

2N4401,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;

.6 A

6.5 pF

40 V

SINGLE

80

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

250 MHz

250 ns

35 ns

.75 V

2N5401,116 by NXP Semiconductors

2N5401,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .63 W; Maximum Collector Current (IC): .3 A;

.3 A

6 pF

150 V

SINGLE

50

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.63 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.5 V

2N5401,412 by NXP Semiconductors

2N5401,412

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .63 W; Maximum Collector Current (IC): .3 A;

.3 A

6 pF

150 V

SINGLE

50

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.63 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.5 V

2N5551,116 by NXP Semiconductors

2N5551,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .3 A;

.3 A

6 pF

160 V

SINGLE

30

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.2 V

2N5551,412 by NXP Semiconductors

2N5551,412

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;

.6 A

6 pF

160 V

SINGLE

30

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.2 V

2PA1015GR,126 by NXP Semiconductors

2PA1015GR,126

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .15 A;

.15 A

7 pF

50 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

80 MHz

.3 V

2PC1815BL,126 by NXP Semiconductors

2PC1815BL,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .15 A;

.15 A

3.5 pF

50 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

80 MHz

.3 V

2PC1815GR,126 by NXP Semiconductors

2PC1815GR,126

NXP Semiconductors

The NXP Semiconductors 2PC1815GR,126 is a NPN BJT transistor with max VCEsat of 0.3V and max IC of 0.15A. Ideal for amplifier applications, it has a min hFE of 25 and operates up to 150°C. With a cylindrical package style, it features 3 terminals in a through-hole configuration.

.15 A

3.5 pF

50 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

80 MHz

.3 V

2PC1815GR,412 by NXP Semiconductors

2PC1815GR,412

NXP Semiconductors

NXP Semiconductors' 2PC1815GR,412 is a NPN BJT transistor with VCEsat of 0.3V and hFE of 200. Ideal for switching applications, it has a max IC of 0.15A and operates up to 150°C. The package is cylindrical with matte tin finish, suitable for through-hole mounting.

.15 A

3.5 pF

50 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

80 MHz

.3 V

2PC1815Y,126 by NXP Semiconductors

2PC1815Y,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .15 A;

.15 A

3.5 pF

50 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

80 MHz

.3 V

2PC1815Y,412 by NXP Semiconductors

2PC1815Y,412

NXP Semiconductors

The NXP Semiconductors 2PC1815Y,412 is a NPN BJT transistor with max VCEsat of 0.3V and hFE of 120. Ideal for switching applications, it has a max IC of 0.15A and operates up to 150°C. With a cylindrical package style, it features 3 terminals and collector-emitter voltage of 50V.

.15 A

3.5 pF

50 V

SINGLE

120

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

80 MHz

.3 V

BC327,116 by NXP Semiconductors

BC327,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

80 MHz

.7 V

BC327,126 by NXP Semiconductors

BC327,126

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

80 MHz

BC327-25,116 by NXP Semiconductors

BC327-25,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

160

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

80 MHz

.7 V

BC327-40,116 by NXP Semiconductors

BC327-40,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

250

TO-92

O-PBCY-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

80 MHz

.7 V

BC337,112 by NXP Semiconductors

BC337,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

100

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN

WIRE

BOTTOM

SWITCHING

SILICON

100 MHz

.7 V