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2PC1815Y,412

NXP Semiconductors

2PC1815Y,412 by NXP Semiconductors

The NXP Semiconductors 2PC1815Y,412 is a NPN BJT transistor with max VCEsat of 0.3V and hFE of 120. Ideal for switching applications, it has a max IC of 0.15A and operates up to 150°C. With a cylindrical package style, it features 3 terminals and collector-emitter voltage of 50V.

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5

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1k+

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Vyrian

USA . 8,111 parts In-Stock

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Anansix

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Digiode

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France . 1,079 parts In-Stock

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Nova Conductors

Japan . 53 parts In-Stock

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Corohmni

South Africa . 99 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,481 parts In-Stock

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Advanced Electronics

New Zealand . 650 parts In-Stock

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AZTECH Wire

Italy . 550 parts In-Stock

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Ampacity Inc.

Singapore . 427 parts In-Stock

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One Stop Electronics

USA . 957 parts In-Stock

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Argo Parts USA

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Overview

Upgrade your electronic projects with the high-quality 2PC1815Y,412 Small Signal Bipolar Junction Transistor by NXP Semiconductors. Designed for switching applications, this NPN transistor offers a maximum VCEsat of 0.3V and a minimum DC current gain of 120, ensuring optimal performance. With a maximum collector-emitter voltage of 50V and maximum power dissipation of 0.5W, this transistor is perfect for a variety of applications. Trust NXP Semiconductors for reliable and efficient components that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a long lifespan.

Polarity or Channel Type: NPN

Commonly used type of bipolar junction transistor for general purpose applications.

Configuration: SINGLE

Simplifies circuit design and implementation.

Transistor Application: SWITCHING

Designed for efficient switching applications with high speed and low saturation voltage.

Maximum VCEsat: 0.3 V

Low saturation voltage minimizes power loss and heat generation.

Package Shape: ROUND

Easy to mount and handle in circular layouts.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and secure mounting on PCBs.

No. of Terminals: 3

Simple and straightforward connection setup.

Maximum Power Dissipation (Abs): 0.5 W

Can handle moderate power levels without overheating.

Package Style (Meter): CYLINDRICAL

Compact and space-saving design for efficient PCB layouts.

Minimum DC Current Gain (hFE): 120

Provides high current gain for amplification and signal processing.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without performance degradation.

Maximum Collector-Base Capacitance: 3.5 pF

Low capacitance for reduced noise and signal distortion.

Maximum Collector-Emitter Voltage: 50 V

Supports high voltage applications within its operating range.

Transistor Element Material: SILICON

Highly reliable and widely used material for transistors.

Maximum Collector Current (IC): 0.15 A

Sufficient current handling capacity for many low-power applications.

Terminal Finish: MATTE TIN

Ensures good electrical contact and corrosion resistance.

Terminal Position: BOTTOM

Allows for easy PCB mounting and connection.

Nominal Transition Frequency (fT): 80 MHz

High frequency response for fast switching and signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PC1815Y,412 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2PC1815Y,412 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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