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2PC1815-T/R

NXP Semiconductors

2PC1815-T/R by NXP Semiconductors

2PC1815-T/R by NXP Semiconductors is an NPN small signal BJT designed for switching applications. It features a max VCEsat of 0.3V, a collector current of 0.15A, and operates up to 150 °C. Its compact cylindrical package ensures efficient performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,456 parts In-Stock

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Digiode

USA . 2,899 parts In-Stock

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2,899

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Anansix

USA . 2,204 parts In-Stock

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Northwest PG Solutions

USA . 1,508 parts In-Stock

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$2.433

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One Stop Electronics

USA . 1,549 parts In-Stock

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$19.050

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$19.050

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UNI Independent Distributors

Spain . 5,398 parts In-Stock

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Corphita

USA . 1,877 parts In-Stock

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Native Components

USA . 65 parts In-Stock

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$2.146

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Overview

Unlock the potential of your electronic designs with the 2PC1815-T/R from NXP Semiconductors, a leader in quality and innovation. This reliable NPN small signal transistor excels in switching applications, ensuring optimal performance even at high temperatures. With its robust construction and precision engineering, you can trust it to deliver exceptional reliability and efficiency, empowering your projects to achieve greater success and longevity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protection against environmental conditions, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching applications, providing reliable performance in electronic circuits.

Configuration: SINGLE

The single configuration allows for simple circuit designs, making it easier to integrate into various electronic systems.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently handle on/off operations in digital circuits.

Maximum VCEsat: 0.3 V

A low VCEsat indicates lower power losses when the transistor is in the 'on' state, improving overall system efficiency.

Package Shape: ROUND

The round package shape facilitates easy mounting and alignment in electronic devices, enhancing manufacturing processes.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and are suitable for high-power applications, ensuring stability in circuits.

No. of Terminals: 3

Three terminals allow for straightforward circuit design and integration, simplifying connections in various applications.

Package Style (Meter): CYLINDRICAL

Cylindrical packaging offers a compact form factor, making it ideal for space-constrained environments.

Minimum DC Current Gain (hFE): 25

A minimum hFE of 25 provides sufficient current amplification, allowing the transistor to effectively drive loads in various applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature enables the transistor to function effectively in demanding environments without performance degradation.

Maximum Collector-Base Capacitance: 3.5 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance, making it suitable for RF applications.

Maximum Collector-Emitter Voltage: 50 V

This voltage rating allows the transistor to be used in a range of applications without risk of breakdown, providing design flexibility.

Transistor Element Material: SILICON

Silicon provides excellent electrical properties and thermal stability, ensuring reliable performance in temperature-variable conditions.

Maximum Collector Current (IC): 0.15 A

Capable of handling up to 0.15 A of collector current, this transistor is suitable for a variety of low to moderate power applications.

Terminal Position: BOTTOM

Bottom terminal positioning allows for effective heat dissipation, aiding in maintaining operational integrity under load.

Nominal Transition Frequency (fT): 80 MHz

An fT of 80 MHz indicates good high-frequency performance, making it suitable for communication and RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PC1815-T/R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2PC1815-T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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