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2PC1815GR

NXP Semiconductors

2PC1815GR by NXP Semiconductors

The NXP Semiconductors 2PC1815GR is a NPN BJT transistor with max VCEsat of 0.3V, hFE of 200, and IC of 0.15A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 80MHz. The package is cylindrical with matte tin finish and through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Digiode

USA . 3,040 parts In-Stock

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Anansix

USA . 2,407 parts In-Stock

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Vyrian

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LWI Electronics Inc

India . 733 parts In-Stock

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VNN

France . 655 parts In-Stock

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Nova Conductors

Japan . 93 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 36 parts In-Stock

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LittleDiode

UK . 20 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,773 parts In-Stock

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$0.630

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Corohmni

South Africa . 125 parts In-Stock

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$1.839

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AZTECH Wire

Italy . 827 parts In-Stock

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One Stop Electronics

USA . 956 parts In-Stock

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$37.050

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Ampacity Inc.

Singapore . 992 parts In-Stock

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UNI Independent Distributors

Spain . 8,268 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,650 parts In-Stock

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Argo Parts USA

USA . 3,720 parts In-Stock

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Glotronic Ltd.

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Corphita

USA . 1,692 parts In-Stock

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Continental Prestige Electronics

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Robosynatics

Brazil . 1,000 parts In-Stock

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$0.597

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$0.553

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Lucentia Tech

USA . 1,000 parts In-Stock

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Bastille Electronics

Australia . 800 parts In-Stock

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Perfect Parts

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Kepictronics

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Overview

Unleash the power of NXP Semiconductors with the 2PC1815GR Small Signal Bipolar Junction Transistor! Perfect for switching applications, this NPN transistor offers high quality and reliability. With a low VCEsat and high DC current gain, this transistor provides exceptional performance in a compact package. Whether you're designing consumer electronics, industrial equipment, or automotive systems, the 2PC1815GR delivers maximum efficiency and precision. Trust NXP Semiconductors to bring innovation to your projects with this top-of-the-line transistor!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Commonly used type of bipolar junction transistor that allows for easy integration into circuits.

Configuration: SINGLE

Simplified design with a single transistor, making it easy to use in basic switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Maximum VCEsat: 0.3 V

Low VCEsat minimizes power loss and improves efficiency in switching operations.

Package Shape: ROUND

Compact and space-saving design for easy integration into various electronic devices.

Terminal Form: THROUGH-HOLE

Simplifies the process of soldering and mounting the transistor onto a circuit board.

Maximum Power Dissipation (Abs): 0.5 W

Ability to handle moderate power levels, suitable for a range of applications.

Package Style (Meter): CYLINDRICAL

Unique cylindrical package style for distinctive visual identification and easy handling.

Minimum DC Current Gain (hFE): 200

High current gain ensures amplification of signals with accuracy and reliability.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, suitable for various environmental conditions.

Maximum Collector-Base Capacitance: 3.5 pF

Low capacitance minimizes input signal distortion and enhances signal integrity.

Maximum Collector-Emitter Voltage: 50 V

Can handle moderate voltage levels, suitable for a wide range of circuit applications.

Transistor Element Material: SILICON

Silicon material provides reliable and stable performance over a wide temperature range.

Maximum Collector Current (IC): 0.15 A

Suitable for low to moderate current applications, such as small signal switching.

Terminal Finish: MATTE TIN

Matte tin finish for improved solderability and conductivity, ensuring secure connections.

Terminal Position: BOTTOM

Clearly defined terminal position for easy identification and connection in circuit layouts.

Nominal Transition Frequency (fT): 80 MHz

High transition frequency allows for fast switching speeds and efficient signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PC1815GR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2PC1815GR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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