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2PC1815BL-AMMO

NXP Semiconductors

2PC1815BL-AMMO by NXP Semiconductors

2PC1815BL-AMMO by NXP Semiconductors is a single NPN BJT designed for amplifier applications. It features a max VCEsat of 0.3V, operates up to 150 °C, and supports collector currents of 0.15A. Its cylindrical plastic package ensures reliable performance in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,816 parts In-Stock

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4,816

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Vyrian

USA . 3,025 parts In-Stock

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3,025

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Anansix

USA . 842 parts In-Stock

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842

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One Stop Electronics

USA . 581 parts In-Stock

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$26.050

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581

$26.050

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UNI Independent Distributors

Spain . 4,723 parts In-Stock

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4,723

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Northwest PG Solutions

USA . 2,186 parts In-Stock

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$3.283

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2,186

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$3.283

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Corphita

USA . 1,660 parts In-Stock

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Native Components

USA . 635 parts In-Stock

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$3.249

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635

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$3.249

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Overview

Elevate your electronic designs with the 2PC1815BL-AMMO from NXP Semiconductors, a trusted leader in innovation. This high-quality NPN bipolar junction transistor excels in amplifier applications, delivering reliability and performance you can count on. With its compact cylindrical package and robust thermal capabilities, it seamlessly integrates into various circuits, providing exceptional amplification while ensuring long-lasting durability. Maximize your project’s potential with NXP’s commitment to excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

As an NPN transistor, it is highly versatile for switching and amplification, making it a suitable choice for a range of electronic circuits.

Configuration: SINGLE

Single configuration allows for simpler circuit designs, making it ideal for applications where compactness and efficiency are critical.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor ensures enhanced performance in audio, RF, and other amplification applications.

Maximum VCEsat: 0.3 V

A low maximum VCEsat value indicates high efficiency and less power loss during operation, thereby increasing overall circuit efficiency.

Package Shape: ROUND

The round package shape facilitates easy integration into various mounting systems, enhancing versatility in design.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides a secure fit and better mechanical stability in circuit boards, improving reliability.

No. of Terminals: 3

Having three terminals makes it simple to interface with other components, providing flexibility in circuit design.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is standard and compatible with various electronic assemblies, facilitating ease of use.

Minimum DC Current Gain (hFE): 25

A minimum hFE of 25 signifies moderate gain, making it effective in low-power applications without excessive current requirements.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures that the transistor can function reliably even in demanding thermal environments.

Maximum Collector-Base Capacitance: 3.5 pF

Low collector-base capacitance minimizes signal distortion and improves frequency response, making it suitable for high-frequency applications.

Maximum Collector-Emitter Voltage: 50 V

The 50 V maximum collector-emitter voltage allows this transistor to handle a range of applications with varying voltage requirements.

Transistor Element Material: SILICON

Silicon provides excellent electrical characteristics and is widely used, ensuring availability and consistency in performance.

Maximum Collector Current (IC): 0.15 A

With a maximum collector current of 0.15 A, this transistor is suitable for applications requiring moderate current handling without overheating.

Terminal Position: BOTTOM

The bottom terminal position design ensures optimal placement on PCB layouts, aiding in effective space management and performance.

Nominal Transition Frequency (fT): 80 MHz

A nominal transition frequency of 80 MHz makes this transistor suitable for high-speed applications, enhancing its usability in RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PC1815BL-AMMO attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2PC1815BL-AMMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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