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2PC1815L-AMMO

NXP Semiconductors

2PC1815L-AMMO by NXP Semiconductors

2PC1815L-AMMO by NXP is an NPN small signal BJT ideal for amplifier applications. It features a max VCEsat of 0.3V, a nominal transition frequency of 80MHz, and operates up to 150 °C. Its cylindrical package with through-hole terminals ensures easy integration in circuits.

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3

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1k+

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Digiode

USA . 4,252 parts In-Stock

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Anansix

USA . 2,467 parts In-Stock

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Vyrian

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One Stop Electronics

USA . 1,493 parts In-Stock

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$15.050

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Native Components

USA . 396 parts In-Stock

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$15.384

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Northwest PG Solutions

USA . 1,927 parts In-Stock

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$16.922

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$15.230

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UNI Independent Distributors

Spain . 6,228 parts In-Stock

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Corphita

USA . 2,326 parts In-Stock

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Overview

Elevate your electronic designs with the 2PC1815L-AMMO from NXP Semiconductors, a trusted leader in high-quality components. This NPN bipolar junction transistor excels in amplifier applications, delivering reliable performance and efficiency. With its robust design and superior temperature resilience, it’s perfect for demanding environments. Experience enhanced signal integrity and responsiveness, ensuring your projects shine with precision and reliability!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and low weight, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in electronic circuits, offering great versatility and ease of integration in amplifiers and switching applications.

Configuration: SINGLE

The single configuration allows for straightforward implementation in circuits, making it ideal for basic amplification tasks.

Transistor Application: AMPLIFIER

This specification highlights the product's suitability for amplification applications, making it a great choice for audio and signal processing.

Maximum VCEsat: 0.3 V

A low VCEsat ensures efficient operation by reducing power loss, which enhances overall circuit performance.

Package Shape: ROUND

The round shape allows for a compact design, which is beneficial in applications where space is limited.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide good mechanical stability and are easier to solder, making assembly simpler for prototype and production boards.

No. of Terminals: 3

With three terminals, this transistor is easy to use in common configurations, simplifying circuit design.

Package Style (Meter): CYLINDRICAL

The cylindrical package style aids in efficient space utilization on circuit boards, making it favorable for compact designs.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain of 25 ensures sufficient amplification capability for a variety of small-signal applications.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures makes this transistor suitable for demanding environments and enhances reliability.

Maximum Collector-Base Capacitance: 3.5 pF

Low collector-base capacitance allows for higher frequency operation, making this transistor effective for RF and high-speed applications.

Maximum Collector-Emitter Voltage: 50 V

A maximum VCE of 50V provides a good range for various applications, ensuring safe and reliable operation under standard conditions.

Transistor Element Material: SILICON

Silicon as the material offers good thermal stability and reliability, common in most electronic components.

Maximum Collector Current (IC): 0.15 A

A collector current rating of 0.15 A makes this transistor suitable for moderate power applications, providing flexibility in design.

Terminal Position: BOTTOM

Bottom terminal positioning can facilitate better heat dissipation, enhancing performance in power-related applications.

Nominal Transition Frequency (fT): 80 MHz

A transition frequency of 80 MHz indicates suitability for high-frequency applications, making it a robust choice for communication devices.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PC1815L-AMMO attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2PC1815L-AMMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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