Loading...

2PC1815GR-AMMO

NXP Semiconductors

2PC1815GR-AMMO by NXP Semiconductors

2PC1815GR-AMMO by NXP Semiconductors is a single NPN BJT designed for amplifier applications. It features a max VCEsat of 0.3V, an hFE of 25, and operates up to 150 °C. Its cylindrical plastic package ensures reliable performance in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,636 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,636

-

-

-

-

Digiode

USA . 1,806 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,806

-

-

-

-

Anansix

USA . 1,761 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,761

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 10 parts In-Stock

1+ parts

$0.735

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$0.735

-

-

-

Northwest PG Solutions

USA . 694 parts In-Stock

1+ parts

$0.809

100+ parts

-

1k+ parts

-

10k+ parts

-

694

$0.809

-

-

-

One Stop Electronics

USA . 887 parts In-Stock

1+ parts

$22.050

100+ parts

-

1k+ parts

-

10k+ parts

-

887

$22.050

-

-

-

UNI Independent Distributors

Spain . 7,223 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,223

-

-

-

-

Corphita

USA . 1,584 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,584

-

-

-

-

Overview

Elevate your electronic designs with the 2PC1815GR-AMMO from NXP Semiconductors, a trusted name in innovation and reliability. This small signal BJT excels as an amplifier, ensuring superior performance in diverse applications. Engineered for longevity and efficiency, its robust plastic/epoxy package withstands high temperatures while delivering consistent results. Experience enhanced audio clarity and precision in signal processing—where quality meets value at every turn!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material enhances durability and protects the transistor from environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

As an NPN transistor, it is well-suited for amplification and switching applications, making it a flexible choice in electronic circuits.

Configuration: SINGLE

A single configuration allows for simplicity in circuit design, minimizing space and complexity.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor is ideal for audio and signal processing applications, providing high fidelity.

Maximum VCEsat: 0.3 V

A low VCEsat ensures efficient operation with minimal voltage drop, resulting in better power efficiency and performance.

Package Shape: ROUND

The cylindrical package shape facilitates easy integration into round PCB layouts, optimizing space utilization.

Terminal Form: THROUGH-HOLE

Through-hole terminals allow for sturdy connections, making the transistor reliable in varying mechanical environments.

No. of Terminals: 3

With three terminals, it provides a straightforward connection scheme for efficient circuit configurations.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers robustness and potentially enhances thermal performance due to better heat dissipation.

Minimum DC Current Gain (hFE): 25

A minimum hFE of 25 provides sufficient amplification, making it a solid choice for low-signal applications.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures ensures reliable performance even in demanding environments.

Maximum Collector-Base Capacitance: 3.5 pF

Low capacitance leads to faster switching speeds, making it suitable for high-frequency applications.

Maximum Collector-Emitter Voltage: 50 V

A high voltage rating makes this transistor versatile and capable of handling various operating conditions.

Transistor Element Material: SILICON

Silicon as the semiconductor material ensures good performance and stability across a range of applications.

Maximum Collector Current (IC): 0.15 A

A maximum collector current of 0.15 A allows for adequate handling of load currents in many electronic applications.

Terminal Position: BOTTOM

Bottom terminal positioning aids in compact PCB design and simplifies layout configurations.

Nominal Transition Frequency (fT): 80 MHz

An fT of 80 MHz supports high-speed operation, making this transistor suitable for RF and fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PC1815GR-AMMO attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2PC1815GR-AMMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19