Loading...

2PC1815GR-T/R

NXP Semiconductors

2PC1815GR-T/R by NXP Semiconductors

2PC1815GR-T/R by NXP is a single NPN BJT designed for switching applications. It features a max VCEsat of 0.3V, hFE of 200, and operates up to 150 °C. This cylindrical through-hole transistor is ideal for efficient signal amplification in compact circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,352 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,352

-

-

-

-

Anansix

USA . 796 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

796

-

-

-

-

Digiode

USA . 340 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

340

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 775 parts In-Stock

1+ parts

$0.735

100+ parts

-

1k+ parts

-

10k+ parts

-

775

$0.735

-

-

-

Northwest PG Solutions

USA . 1,731 parts In-Stock

1+ parts

$0.809

100+ parts

-

1k+ parts

-

10k+ parts

-

1,731

$0.809

-

-

-

One Stop Electronics

USA . 462 parts In-Stock

1+ parts

$63.050

100+ parts

-

1k+ parts

-

10k+ parts

-

462

$63.050

-

-

-

UNI Independent Distributors

Spain . 5,049 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,049

-

-

-

-

Corphita

USA . 695 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

695

-

-

-

-

Overview

Unlock superior performance with the 2PC1815GR-T/R from NXP Semiconductors, a trusted leader in innovative technology. This small signal NPN transistor excels in switching applications, delivering exceptional reliability and efficiency. With a robust design capable of operating in demanding environments up to 150 °C, it ensures optimal performance for a variety of electronic devices. Experience the NXP advantage: quality you can trust, versatility for your projects, and peace of mind for every application!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package material ensures durability and protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration enables the transistor to drive higher currents, making it ideal for switching applications.

Configuration: SINGLE

A single configuration simplifies circuit design, offering ease of integration into various electronic applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is efficient and reliable in control circuits.

Maximum VCEsat: 0.3 V

A low VCEsat will result in less power loss in applications, making this transistor energy-efficient for switching tasks.

Package Shape: ROUND

The round package shape allows for better thermal management and reliability in compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong physical connections and are suitable for robust applications.

No. of Terminals: 3

A three-terminal configuration simplifies circuit design while ensuring adequate connectivity for functionality.

Package Style (Meter): CYLINDRICAL

The cylindrical package style enhances space efficiency and allows for effective integration in various circuit layouts.

Minimum DC Current Gain (hFE): 200

With a high current gain, this transistor is capable of amplifying small input signals effectively, useful for sensitive applications.

Maximum Operating Temperature: 150 °C

A high operating temperature range allows this transistor to function reliably in demanding environments.

Maximum Collector-Base Capacitance: 3.5 pF

Lower capacitance values enable faster switching times, crucial for high-speed applications.

Maximum Collector-Emitter Voltage: 50 V

A maximum voltage rating of 50V makes this transistor suitable for a variety of applications without risking damage.

Transistor Element Material: SILICON

Made from silicon, this transistor provides good performance and reliability in electronic circuits.

Maximum Collector Current (IC): 0.15 A

With the ability to handle up to 0.15A of current, this transistor fits well in low to moderate current applications.

Terminal Position: BOTTOM

Bottom terminal position allows for better space utilization on printed circuit boards and improves thermal performance.

Nominal Transition Frequency (fT): 80 MHz

A transition frequency of 80 MHz indicates good performance for high-frequency applications, making it versatile for switching operations.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PC1815GR-T/R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2PC1815GR-T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19