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2PC1815-AMMO

NXP Semiconductors

2PC1815-AMMO by NXP Semiconductors

2PC1815-AMMO by NXP Semiconductors is a single NPN BJT designed for amplifier applications. It features a max VCEsat of 0.3V, operates up to 150 °C, and supports a collector current of 0.15A. Its cylindrical package ensures efficient thermal management in compact designs.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 4,218 parts In-Stock

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Digiode

USA . 3,526 parts In-Stock

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Anansix

USA . 2,248 parts In-Stock

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Northwest PG Solutions

USA . 2,047 parts In-Stock

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$2.433

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$2.433

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One Stop Electronics

USA . 502 parts In-Stock

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$53.050

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502

$53.050

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Corphita

USA . 3,168 parts In-Stock

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UNI Independent Distributors

Spain . 2,996 parts In-Stock

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Native Components

USA . 416 parts In-Stock

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$2.146

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Overview

Unlock exceptional performance with the 2PC1815-AMMO from NXP Semiconductors, a leader in innovative solutions. This high-quality NPN transistor excels in amplifier applications, offering reliability and efficiency even at elevated temperatures. With its compact design and robust construction, it seamlessly integrates into circuit designs, ensuring optimal signal clarity and minimal distortion. Choose NXP for superior quality and elevate your projects to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used due to their high speed and efficiency in amplification, making them ideal for signal processing.

Configuration: SINGLE

A single configuration simplifies circuit design and allows compact integration in devices.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor delivers clear and powerful enough for audio and other analog applications.

Maximum VCEsat: 0.3 V

Low VCEsat minimizes power loss during operation, contributing to higher efficiency in circuits.

Package Shape: ROUND

The round shape can offer better thermal dissipation and mechanical stability in certain applications.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides robust electrical connections and is favored in high-power applications.

No. of Terminals: 3

Three terminals streamline connections while allowing flexible circuit integration.

Package Style (Meter): CYLINDRICAL

This package style ensures a compact footprint, making it suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 25

A minimum current gain of 25 assures adequate amplification, making it effective for various electronic applications.

Maximum Operating Temperature: 150 °C

High thermal tolerance allows the transistor to operate in demanding environments without compromising performance.

Maximum Collector-Base Capacitance: 3.5 pF

Low capacitance enhances frequency response, making this transistor suitable for high-speed applications.

Maximum Collector-Emitter Voltage: 50 V

A voltage rating of 50 V provides versatility for both low and medium power applications.

Transistor Element Material: SILICON

Silicon allows for high performance and reliability, making it the standard material for most BJTs.

Maximum Collector Current (IC): 0.15 A

With a maximum collector current of 0.15 A, this transistor is suitable for a variety of moderate current applications.

Terminal Position: BOTTOM

Bottom terminal positioning aids in effective heat dissipation and simplifies PCB layout.

Nominal Transition Frequency (fT): 80 MHz

A transition frequency of 80 MHz indicates good performance at higher frequencies, ideal for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PC1815-AMMO attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2PC1815-AMMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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