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2PC1815L-T/R

NXP Semiconductors

2PC1815L-T/R by NXP Semiconductors

2PC1815L-T/R by NXP Semiconductors is a single NPN BJT designed for amplifier applications. It features a max VCEsat of 0.3V, hFE of 120, and operates up to 150 °C. This cylindrical transistor with through-hole terminals supports efficient signal amplification in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Anansix

USA . 2,477 parts In-Stock

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Digiode

USA . 2,031 parts In-Stock

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2,031

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Vyrian

USA . 54 parts In-Stock

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54

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Native Components

USA . 353 parts In-Stock

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$15.384

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353

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Northwest PG Solutions

USA . 2,266 parts In-Stock

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$16.922

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$15.230

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One Stop Electronics

USA . 1,575 parts In-Stock

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$47.050

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Corphita

USA . 2,739 parts In-Stock

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UNI Independent Distributors

Spain . 2,580 parts In-Stock

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Overview

Elevate your projects with the 2PC1815L-T/R from NXP Semiconductors, a trusted leader in innovative electronics. This high-quality NPN small signal transistor is designed for superior amplification, ensuring optimal performance across various applications. With its robust plastic/epoxy packaging and reliable operation up to 150 °C, you gain durability and efficiency in your circuits. Choose the 2PC1815L-T/R for enhanced reliability and value that empowers your designs!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers a good balance between durability and cost-efficiency, making this BJT suitable for a variety of applications.

Polarity or Channel Type: NPN

An NPN configuration is widely used and ideal for switching and amplification applications, enhancing versatility.

Configuration: SINGLE

This single configuration allows for simpler circuit designs and ease of integration into many electronic devices.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this BJT ensures reliable signal amplification, making it suitable for audio and communication equipment.

Maximum VCEsat: 0.3 V

The low VCEsat value indicates efficient performance during operation, contributing to lower power loss and better energy efficiency.

Package Shape: ROUND

The round shape aids in uniform thermal dissipation and allows for compact placement in various circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides stronger mechanical support and is ideal for prototyping and higher power applications.

No. of Terminals: 3

With three terminals, this BJT offers essential functionality in a compact design for various electronic applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is conducive for easy handling and mounting, making it user-friendly for designers.

Minimum DC Current Gain (hFE): 120

A minimum hFE of 120 ensures strong amplification capability, enabling effective signal processing.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this BJT to function reliably in demanding environments without overheating.

Maximum Collector-Base Capacitance: 3.5 pF

Low collector-base capacitance contributes to high-frequency operation, making it suitable for RF applications.

Maximum Collector-Emitter Voltage: 50 V

A maximum VCE of 50 V permits use in various applications without the risk of breakdown under normal conditions.

Transistor Element Material: SILICON

Silicon as the elemental material ensures reliable performance and availability, as it is the most commonly used semiconductor material.

Maximum Collector Current (IC): 0.15 A

The maximum collector current rating allows for decent load handling capabilities, suitable for moderate power requirements.

Terminal Position: BOTTOM

Bottom terminal positioning simplifies PCB layout and reduces the space needed for mounting, streamlining design efforts.

Nominal Transition Frequency (fT): 80 MHz

A nominal transition frequency of 80 MHz indicates good high-frequency performance, making it ideal for RF circuit applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PC1815L-T/R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2PC1815L-T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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