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2PC1815GR,412

NXP Semiconductors

2PC1815GR,412 by NXP Semiconductors

NXP Semiconductors' 2PC1815GR,412 is a NPN BJT transistor with VCEsat of 0.3V and hFE of 200. Ideal for switching applications, it has a max IC of 0.15A and operates up to 150°C. The package is cylindrical with matte tin finish, suitable for through-hole mounting.

Median Price

$0.762

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

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$0.762

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Vyrian

USA . 2,782 parts In-Stock

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Digiode

USA . 2,767 parts In-Stock

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Anansix

USA . 2,264 parts In-Stock

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VNN

France . 786 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,094 parts In-Stock

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$0.290

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Corohmni

South Africa . 315 parts In-Stock

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$1.909

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AZTECH Wire

Italy . 660 parts In-Stock

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One Stop Electronics

USA . 246 parts In-Stock

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$51.050

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Ampacity Inc.

Singapore . 1,221 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 15,433 parts In-Stock

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Microchip USA

USA . 3,885 parts In-Stock

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UNI Independent Distributors

Spain . 3,632 parts In-Stock

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Corphita

USA . 3,176 parts In-Stock

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Continental Prestige Electronics

USA . 3,021 parts In-Stock

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Argo Parts USA

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Bastille Electronics

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Overview

Unlock the power of cutting-edge technology with the NXP Semiconductors 2PC1815GR,412 Small Signal Bipolar Junction Transistor. Designed for reliable switching applications, this NPN transistor offers unparalleled performance and efficiency. With a minimum DC current gain of 200 and a maximum VCEsat of 0.3V, this transistor delivers superior conductivity and power dissipation. Whether you're in the automotive, telecommunications, or consumer electronics industry, this high-quality product is sure to meet your needs. Trust NXP Semiconductors to provide the innovative solutions you need to stay ahead in today's fast-paced market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile for different circuit designs.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuits, simplifying the design process.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides efficient performance in on/off operations.

Maximum VCEsat: 0.3 V

With a low saturation voltage, this transistor minimizes power loss and heat generation during operation.

Package Shape: ROUND

The round package shape allows for easy mounting and soldering, ensuring a secure connection in the circuit.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong mechanical connection, suitable for applications where reliability is essential.

No. of Terminals: 3

Having 3 terminals simplifies the circuit layout and makes it easier to connect the transistor in a circuit.

Maximum Power Dissipation (Abs): 0.5 W

With a high power dissipation rating, this transistor can handle moderate power levels without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compact and space-saving, ideal for applications with limited space constraints.

Minimum DC Current Gain (hFE): 200

A high DC current gain ensures efficient amplification of the input signal, making this transistor suitable for amplification circuits.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand elevated temperatures without performance degradation.

Maximum Collector-Base Capacitance: 3.5 pF

Low collector-base capacitance minimizes the risk of signal distortion in high-frequency applications.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating allows this transistor to be used in circuits with higher voltage requirements.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this transistor a good choice for demanding applications.

Maximum Collector Current (IC): 0.15 A

With a moderate collector current rating, this transistor can handle typical current levels in switching applications.

Terminal Finish: MATTE TIN

Matte tin finish provides a good solderable surface for reliable connections, ensuring long-term performance of the transistor.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting on circuit boards, simplifying the assembly process.

Nominal Transition Frequency (fT): 80 MHz

High transition frequency allows for fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PC1815GR,412 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2PC1815GR,412 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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