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2PC1815BL-T/R

NXP Semiconductors

2PC1815BL-T/R by NXP Semiconductors

2PC1815BL-T/R from NXP is an NPN small signal BJT designed for switching applications. It features a max VCEsat of 0.3V, hFE of 350, and operates up to 150 °C. This cylindrical through-hole transistor supports efficient performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,279 parts In-Stock

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Vyrian

USA . 2,881 parts In-Stock

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2,881

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Anansix

USA . 1,636 parts In-Stock

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1,636

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Northwest PG Solutions

USA . 1,516 parts In-Stock

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$2.563

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$2.563

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One Stop Electronics

USA . 936 parts In-Stock

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$55.050

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936

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UNI Independent Distributors

Spain . 5,929 parts In-Stock

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Corphita

USA . 3,772 parts In-Stock

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Native Components

USA . 476 parts In-Stock

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$2.260

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476

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Overview

Elevate your electronic designs with the 2PC1815BL-T/R from NXP Semiconductors—a trusted leader in innovative technology. This high-performance NPN transistor excels in switching applications, delivering exceptional efficiency and reliability. With its robust construction and ability to operate at high temperatures, it’s perfect for a range of consumer and industrial devices. Choose NXP for unparalleled quality and performance that empowers your projects to thrive!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and lightweight characteristics, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and are ideal for signal amplification, providing versatility in circuit design.

Configuration: SINGLE

A single transistor configuration simplifies design and reduces space requirements on the circuit board, making it easier to implement.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor is effective in controlling larger currents, suitable for power management.

Maximum VCEsat: 0.3 V

Low VCEsat means minimal voltage drop and improved efficiency in switching applications, leading to better performance in circuits.

Package Shape: ROUND

Round package shape provides ease of handling and mounting flexibility, suitable for various PCB designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure mechanical and electrical connections, enhancing reliability in rugged environments.

No. of Terminals: 3

With three terminals, this transistor allows for simple connections, facilitating easy integration into electronic circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical packaging aids in heat dissipation, which is crucial for maintaining performance and longevity in high-temperature applications.

Minimum DC Current Gain (hFE): 350

A high minimum DC current gain ensures efficient amplification, making this transistor suitable for signal processing tasks.

Maximum Operating Temperature: 150 °C

Capable of withstanding high temperatures, making it reliable in demanding environments and ensuring stable operation.

Maximum Collector-Base Capacitance: 3.5 pF

Low capacitance values contribute to higher switching speeds, making it suitable for applications requiring quick response times.

Maximum Collector-Emitter Voltage: 50 V

Rated for a relatively high voltage, this transistor can handle a broad range of operating conditions, enhancing its applicability.

Transistor Element Material: SILICON

Silicon as a material enables effective performance and reliability in electronic applications, being the standard for BJTs.

Maximum Collector Current (IC): 0.15 A

With a rated collector current, it supports efficient operation in low to moderate power applications, ensuring versatile usage.

Terminal Position: BOTTOM

Bottom terminal position allows for efficient layout in PCB design, optimizing space and ensuring effective connectivity.

Nominal Transition Frequency (fT): 80 MHz

A high transition frequency indicates its ability to operate efficiently at high frequencies, making it ideal for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PC1815BL-T/R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

350

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2PC1815BL-T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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