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2PC1815GR,126

NXP Semiconductors

2PC1815GR,126 by NXP Semiconductors

The NXP Semiconductors 2PC1815GR,126 is a NPN BJT transistor with max VCEsat of 0.3V and max IC of 0.15A. Ideal for amplifier applications, it has a min hFE of 25 and operates up to 150°C. With a cylindrical package style, it features 3 terminals in a through-hole configuration.

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5

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1k+

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VNN

France . 4,487 parts In-Stock

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Digiode

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Vyrian

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Anansix

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Nova Conductors

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AZTECH Wire

Italy . 594 parts In-Stock

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Ampacity Inc.

Singapore . 1,342 parts In-Stock

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One Stop Electronics

USA . 520 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Spain . 5,177 parts In-Stock

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Microchip USA

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Argo Parts USA

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Overview

Upgrade your electronics with the 2PC1815GR,126 by NXP Semiconductors, a high-quality Small Signal Bipolar Junction Transistor (BJT) perfect for amplifier applications. With a low VCEsat of 0.3V and a maximum collector current of 0.15A, this NPN transistor offers excellent performance and reliability. Benefit from NXP Semiconductors' reputation for top-notch manufacturing and experience seamless installation with its through-hole terminals. Enhance your projects with the 2PC1815GR,126 and unlock a world of possibilities in electronic design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable in various applications.

Polarity or Channel Type: NPN

Commonly used in amplifier circuits, allowing for easy integration in existing designs.

Configuration: SINGLE

Simplifies circuit design and reduces complexity in applications where only one transistor is needed.

Maximum VCEsat: 0.3 V

Low saturation voltage helps minimize power losses and improves efficiency in amplifier circuits.

Package Shape: ROUND

Enables easy handling and installation in devices or on PCBs.

Terminal Form: THROUGH-HOLE

Facilitates through-hole soldering for secure connections in circuits.

No. of Terminals: 3

Simple three-terminal configuration for easy integration and connections in circuits.

Maximum Power Dissipation (Abs): 0.5 W

Can handle decent power levels without overheating, suitable for various applications.

Package Style (Meter): CYLINDRICAL

Space-saving cylindrical package for efficient use of PCB real estate.

Minimum DC Current Gain (hFE): 25

Provides sufficient current gain for amplification purposes in various applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring reliable performance in harsh environments.

Maximum Collector-Base Capacitance: 3.5 pF

Low capacitance helps in reducing signal distortion and improving high-frequency performance.

Maximum Collector-Emitter Voltage: 50 V

Safe operating voltage range suitable for many low-power amplifier applications.

Transistor Element Material: SILICON

Silicon material provides good performance characteristics for the transistor element.

Maximum Collector Current (IC): 0.15 A

Able to handle moderate current levels safely, suitable for low-power applications.

Terminal Finish: MATTE TIN

Matte tin finish for good solderability and reliable connections in circuit applications.

Terminal Position: BOTTOM

Bottom terminal position for easy mounting and connection in circuit layouts.

Nominal Transition Frequency (fT): 80 MHz

High transition frequency for good high-frequency response in amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PC1815GR,126 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2PC1815GR,126 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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