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ZTX795ASTOA

Zetex Plc

ZTX795ASTOA by Zetex Plc

ZTX795ASTOA by Zetex Plc is a PNP BJT transistor for switching applications. With VCEsat of 0.3V, hFE of 100, and IC of 0.5A, it operates at up to 200°C. Its silicon element and matte tin finish make it suitable for high-temperature environments requiring fast switching speeds up to 100MHz.

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AZTECH Wire

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Overview

Looking to amplify your electronic designs? The ZTX795ASTOA by Zetex Plc is the perfect solution for your small signal bipolar junction transistor needs. With a focus on quality and reliability, Zetex Plc ensures that each component meets the highest standards in the industry. Whether you're working on switching applications or need a PNP transistor for your project, the ZTX795ASTOA delivers superior performance with a low VCEsat of only 0.3V. Experience the value and benefits of using this high-quality transistor in your designs today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of environments and applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switch circuits, making this product versatile for different circuit configurations.

Configuration: SINGLE

Single configuration transistors are easier to work with in circuit design and troubleshooting compared to multiple configurations.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can quickly turn on and off in electronic circuits.

Maximum VCEsat: 0.3 V

Low VCEsat means less energy loss and improved efficiency in switching applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy PCB mounting and space-saving in circuit layouts.

No. of Terminals: 3

With 3 terminals, this transistor is easy to connect and integrate into circuits.

Minimum DC Current Gain (hFE): 100

A higher hFE value ensures reliable amplification and switching performance in circuits.

Maximum Operating Temperature: 200 °C

Can operate at high temperatures without compromising performance, suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 140 V

With a high VCE voltage rating, this transistor can handle higher voltage levels in circuits.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 0.5 A

A high IC rating allows this transistor to handle higher current loads in circuit applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and ensures secure connections in circuit assemblies.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX795ASTOA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Zetex Plc

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

ZTX795ASTOA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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