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ZTX753Q

Diodes Incorporated

ZTX753Q by Diodes Incorporated

ZTX753Q by Diodes Inc. is a PNP BJT transistor with max. VCE of 100V, IC of 2A, and hFE of 25. Ideal for switching applications due to its single configuration and silicon element material. Comes in an inline package style with matte tin finish, suitable for CECC standards at 140MHz fT.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,481 parts In-Stock

1+ parts

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1,481

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Nova Conductors

Japan . 750 parts In-Stock

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750

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 200 parts In-Stock

1+ parts

$1.557

100+ parts

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200

$1.557

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Aztec Data Supply Inc.

USA . 3,044 parts In-Stock

1+ parts

$1.593

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3,044

$1.593

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AZTECH Wire

Italy . 626 parts In-Stock

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$9.288

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626

$9.288

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Semicontronic

India . 538 parts In-Stock

1+ parts

$27.050

100+ parts

$26.374

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$26.238

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538

$27.050

$26.374

$26.238

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Continental Prestige Electronics

USA . 5,138 parts In-Stock

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5,138

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Argo Parts USA

USA . 2,125 parts In-Stock

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2,125

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Robosynatics

Brazil . 300 parts In-Stock

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$1.710

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$1.710

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$1.710

300

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$1.710

$1.710

$1.710

Lucentia Tech

USA . 300 parts In-Stock

1+ parts

-

100+ parts

$1.710

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$1.710

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$1.710

300

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$1.710

$1.710

$1.710

Bastille Electronics

Australia . 200 parts In-Stock

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200

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Overview

Unlock the power of innovation with the ZTX753Q by Diodes Incorporated. As a leader in small signal bipolar junction transistors (BJT), Diodes Incorporated guarantees top-notch quality and reliability. Perfect for switching applications, this PNP transistor offers a maximum collector-emitter voltage of 100V and a maximum collector current of 2A. With a minimum DC current gain of 25 and a nominal transition frequency of 140MHz, the ZTX753Q delivers outstanding performance. Trust Diodes Incorporated to provide cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the ZTX753Q today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and durability in various environments.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, such as switching circuits.

Configuration: SINGLE

Simplifies circuit design and provides ease of use in various applications.

Transistor Application: SWITCHING

Optimized for switching applications, providing fast and efficient performance.

Package Shape: RECTANGULAR

Compact and space-saving design that allows for easy integration into circuit boards.

Terminal Form: WIRE

Facilitates easy connection and soldering, making it convenient for assembly.

No. of Terminals: 3

Standard number of terminals for a bipolar junction transistor, ensuring compatibility with common circuit configurations.

Package Style (Meter): IN-LINE

Convenient package style for a small signal BJT, allowing for easy installation and connection.

Minimum DC Current Gain (hFE): 25

Provides sufficient gain for amplification purposes in various circuit applications.

Maximum Collector-Emitter Voltage: 100 V

Suitable for applications requiring higher voltage levels, providing versatility in circuit design.

Transistor Element Material: SILICON

High-quality silicon material ensures reliable performance and efficiency.

Maximum Collector Current (IC): 2 A

Able to handle higher current levels, making it suitable for power applications.

Terminal Finish: Matte Tin (Sn)

Corrosion-resistant finish for long-term reliability and durability.

Terminal Position: SINGLE

Simplifies connection and soldering process, enhancing ease of use.

Reference Standard: CECC

Compliance with a recognized standard ensures quality and reliability.

Nominal Transition Frequency (fT): 140 MHz

High transition frequency enables fast switching speeds and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX753Q attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Reference Standard:

CECC

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX753Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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