Loading...

ZTX753M1

Diodes Incorporated

ZTX753M1 by Diodes Incorporated

ZTX753M1 by Diodes Inc. is a PNP BJT transistor with hFE of 25, VCE of 100V, and IC of 2A. Ideal for switching applications due to its high transition frequency of 140MHz. Comes in a small outline package suitable for surface mount technology.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,123 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,123

-

-

-

-

ComSIT Distribution GmbH

Germany . 245 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

245

-

-

-

-

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

150

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,813 parts In-Stock

1+ parts

$0.343

100+ parts

-

1k+ parts

-

10k+ parts

-

4,813

$0.343

-

-

-

Corohmni

South Africa . 228 parts In-Stock

1+ parts

$0.620

100+ parts

-

1k+ parts

-

10k+ parts

-

228

$0.620

-

-

-

AZTECH Wire

Italy . 500 parts In-Stock

1+ parts

$10.909

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$10.909

-

-

-

Continental Prestige Electronics

USA . 6,615 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,615

-

-

-

-

Argo Parts USA

USA . 3,821 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,821

-

-

-

-

Robosynatics

Brazil . 1,126 parts In-Stock

1+ parts

-

100+ parts

$14.400

1k+ parts

$14.400

10k+ parts

$14.400

1,126

-

$14.400

$14.400

$14.400

Lucentia Tech

USA . 1,126 parts In-Stock

1+ parts

-

100+ parts

$14.400

1k+ parts

$14.400

10k+ parts

$14.400

1,126

-

$14.400

$14.400

$14.400

Bastille Electronics

Australia . 800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

800

-

-

-

-

Overview

Enhance your electronics projects with the high-quality ZTX753M1 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers reliable components for various applications, making them a trusted choice among engineers and hobbyists alike. The ZTX753M1, a Small Signal Bipolar Junction Transistor, offers exceptional performance in switching applications, providing customers with the value and benefits they need to bring their designs to life. Upgrade your circuits with the ZTX753M1 and experience the advantages of superior quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this transistor lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits requiring PNP transistors, offering versatility in design options.

Configuration: SINGLE

The single configuration simplifies circuit design and layout, making it easier to incorporate into projects.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides fast and efficient switching performance in electronic circuits.

Surface Mount: YES

With surface mount capabilities, this transistor offers ease of installation and space-saving benefits on circuit boards.

Package Shape: RECTANGULAR

The rectangular shape of the package ensures compatibility with standard PCB layouts and allows for efficient use of space.

Terminal Form: GULL WING

The gull wing terminal form offers strong connections and is suitable for automated assembly processes, increasing manufacturing efficiency.

No. of Terminals: 3

With three terminals, this transistor provides the necessary connections for proper circuit operation while keeping the design simple and compact.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for compact circuit designs, making it suitable for applications with limited space.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain of 25 ensures reliable and consistent amplification performance in various electronic circuits.

Maximum Collector-Emitter Voltage: 100 V

The high maximum collector-emitter voltage rating of 100V offers flexibility in circuit design and operation in a wide range of applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance and reliability, making it a durable choice for electronic applications.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2A, this transistor can handle higher current loads, making it suitable for medium-power applications.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and allows for easy integration into electronic designs.

Reference Standard: CECC

Compliant with the CECC reference standard, this transistor meets industry requirements and ensures quality and reliability in performance.

Nominal Transition Frequency (fT): 140 MHz

With a nominal transition frequency of 140 MHz, this transistor offers fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX753M1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PSSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Reference Standard:

CECC

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX753M1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20