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ZTX753STOA

Zetex Plc

ZTX753STOA by Zetex Plc

ZTX753STOA by Zetex Plc is a PNP BJT transistor for switching applications. It has VCEsat of 0.5V, hFE of 25, and IC of 2A. With a max operating temp of 200°C, it's ideal for high-power switching circuits in various electronic devices.

Median Price

$1.811

Lifecycle Status

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4

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1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 500 parts In-Stock

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$1.811

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$1.720

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$1.720

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500

$1.811

$1.720

$1.720

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ACDS - Activité Composants Distribution Service

France . 26,000 parts In-Stock

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Vyrian

USA . 4,670 parts In-Stock

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Nova Conductors

Japan . 48 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,017 parts In-Stock

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$0.347

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$0.347

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Corohmni

South Africa . 73 parts In-Stock

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$0.646

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73

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Semicontronic

India . 489 parts In-Stock

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$1.540

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$1.502

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$1.494

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489

$1.540

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$1.811

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$1.720

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$1.720

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500

$1.811

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AZTECH Wire

Italy . 469 parts In-Stock

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$14.016

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Component Stockers USA

USA . 687 parts In-Stock

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$99.990

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Argo Parts USA

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Robosynatics

Brazil . 30 parts In-Stock

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$500.698

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Lucentia Tech

USA . 30 parts In-Stock

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$500.698

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$500.698

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$500.698

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Upgrade your electronic projects with the ZTX753STOA by Zetex Plc, a high-quality Small Signal Bipolar Junction Transistor. Designed for switching applications, this PNP transistor offers reliable performance with a maximum VCEsat of 0.5V and a maximum collector current of 2A. With a focus on quality and durability, Zetex Plc delivers exceptional value to customers seeking efficient and precise electronic components. Elevate your designs with the ZTX753STOA and experience the benefits of superior performance and reliability in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and insulation for the transistor, enhancing its durability and reliability.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high power applications, making this transistor suitable for switching applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to integrate into various electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency.

Maximum VCEsat: 0.5 V

With low saturation voltage, this transistor minimizes power loss and improves overall efficiency.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to mount and secure the transistor in various electronic devices.

No. of Terminals: 3

Having 3 terminals allows for easy connection and integration into circuits.

Maximum Power Dissipation Ambient: 2.5 W

With a high power dissipation rating, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain of 25 ensures sufficient amplification for the transistor to function effectively.

Maximum Operating Temperature: 200 °C

With a high operating temperature range, this transistor can withstand harsh environmental conditions.

Maximum Collector-Base Capacitance: 30 pF

Low collector-base capacitance helps in minimizing signal distortion and improving switching speeds.

Maximum Collector-Emitter Voltage: 100 V

High collector-emitter voltage rating allows for safe operation in various voltage ranges.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2 A, this transistor can handle moderate current levels without overheating or damage.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and ensures secure connections for the terminal.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds and high-frequency response, making this transistor suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZTX753STOA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Zetex Plc

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Base Capacitance:

30 pF

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

2.5 W

Qualification:

Not Qualified

Reference Standard:

CECC

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

ZTX753STOA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

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