Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NSBA143EDXV6T1
Onsemi
NSBA143EDXV6T1 by Onsemi is a PNP BJT transistor with 2 elements, built-in resistor, and hFE of 15. It is used for switching applications with max VCE of 50V and IC of 0.1A. The package is small outline, surface mountable, with 6 terminals in a rectangular shape.
BUILT IN BIAS RESISTOR RATIO IS 1
.1 A
50 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
15
R-PDSO-F6
e3
1
2
6
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
PNP
.5 W
Not Qualified
BIP General Purpose Small Signal
YES
TIN
FLAT
DUAL
30
SWITCHING
SILICON
NSBA143ZDXV6T1
NSBA143ZDXV6T1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 80. It's ideal for switching applications with max VCE of 50V and IC of 0.1A. This small outline transistor in plastic/epoxy package is surface mountable, making it suitable for compact electronic designs.
BUILT IN BIAS RESISTOR RATIO IS 0.1
80
NSBC113EDXV6T1
NSBC113EDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and max. collector-emitter voltage of 50V. Ideal for switching applications due to its small outline package style and max collector current of 0.1A. Features flat terminals, tin finish, and peak reflow temp of 260°C for surface mount usage.
3
NPN
NSBC113EPDXV6T1
NSBC113EPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistor, max. collector-emitter voltage of 50V, and max. collector current of 0.1A. This transistor comes in a small outline package shape suitable for surface mount assembly.
NPN AND PNP
NSBC114EDXV6T1
NSBC114EDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and hFE of 35. Ideal for switching applications with max VCE of 50V and IC of 0.1A. Features small outline package style, flat terminals, and peak reflow temp of 260 °C.
35
NSBC114EPDXV6T1
NSBC114EPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements with built-in resistor, max collector-emitter voltage of 50V, and max power dissipation of 0.5W. This surface-mount transistor has a package style of small outline and terminal finish in tin.
NSBC114TDXV6T1
NSBC114TDXV6T1 by Onsemi is a NPN BJT transistor with 2 elements, built-in resistor, and hFE of 160. It has a max collector-emitter voltage of 50V and max current of 0.1A. Ideal for switching applications due to its small outline package and peak reflow temp of 260 °C.
BUILT IN BIAS RESISTOR
160
NSBC123EDXV6T1
NSBC123EDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and max. collector-emitter voltage of 50V. Ideal for switching applications, it has a max. power dissipation of 0.5W and max. collector current of 0.1A in a small outline package shape suitable for surface mount technology.
8
NSBC123JDXV6T1
NSBC123JDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and hFE of 80. It has a max VCE of 50V and IC of 0.1A, suitable for switching applications. This small outline transistor in plastic/epoxy package is surface mountable with 6 terminals for efficient use.
BUILT IN BIAS RESISTOR RATIO 21.36
NSBC123JPDXV6T1
NSBC123JPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements with built-in resistors in a small outline package, supporting a max collector-emitter voltage of 50V and max collector current of 0.1A. Suitable for surface mount designs requiring high DC current gain (hFE) above 80.
BUILT IN BIAS RESISTOR RATIO IS 21.36
NSBC124EDXV6T1
NSBC124EDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and hFE of 60. It has a max VCE of 50V, IC of 0.1A, and Pdiss of 0.5W. Ideal for switching applications due to its small outline package and silicon material.
60
NSBC124EPDXV6T1
NSBC124EPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistor, max power dissipation of 0.5W, and max collector-emitter voltage of 50V. This transistor is surface mountable in a small outline package, suitable for various electronic circuits requiring low to medium power switching capabilities.
150 Cel
NSBC124XDXV6T1
NSBC124XDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and hFE of 80. It has a max VCE of 50V, IC of 0.1A, and Pdiss of 0.5W. Ideal for switching applications in small outline packages with flat terminals for surface mount technology.
BUILT IN BIAS RESISTOR RATIO 2.14
NSBC143EDXV6T1
NSBC143EDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and max. collector-emitter voltage of 50V. Ideal for switching applications, it has a small outline package style and can handle up to 0.1A collector current.
NSBC143ZDXV6T1
NSBC143ZDXV6T1 by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80 (hFE). Ideal for switching applications in small outline packages, it features a peak reflow temp of 260 °C.
BUILT IN BIAS RESISTOR RATIO 10
NSBC144EPDXV6T1
NSBC144EPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP types, 2 elements with built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. Ideal for switching applications in compact designs due to its small outline package shape and surface-mount capability.
EMC3DXV5T5
EMC3DXV5T5 by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features 2 elements in a cascaded configuration with built-in resistors, ideal for switching applications. With a max collector-emitter voltage of 50V and a power dissipation of 0.5W, it is suitable for surface mount designs requiring compact components.
BUILT-IN BIAS RESISTOR RATIO IS 1
CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
R-PDSO-F5
5
QSL12TR
ROHM
ROHM QSL12TR is a NPN BJT with 5 terminals, 0.5W power dissipation, and 270 min hFE. Ideal for switching applications, it has a max operating temp of 125°C and can handle up to 1A collector current. The transistor's package is surface mountable with Gull Wing terminals in a small outline shape.
1 A
30 V
SINGLE WITH BUILT-IN DIODE
270
R-PDSO-G5
e1
125 Cel
Other Transistors
TIN SILVER COPPER
GULL WING
10
320 MHz
EMZ1DXV6T1
The Onsemi EMZ1DXV6T1 is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features 2 separate elements in a rectangular package with 6 terminals. With a max power dissipation of 0.5W, hFE of 120, and fT of 180MHz, it operates at up to 150 °C and supports a max collector-emitter voltage of 60V.
60 V
SEPARATE, 2 ELEMENTS
120
AMPLIFIER
180 MHz
EMZ1DXV6T5
The Onsemi EMZ1DXV6T5 is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features 2 separate elements in a rectangular package with 6 terminals. With a max power dissipation of 0.5W, hFE of 120, and fT of 180MHz, it operates at up to 150 °C and supports a max VCE of 60V and IC of 0.1A.
EMD5DXV6T1
EMD5DXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features separate elements with built-in resistor for switching applications. With a max VCEsat of 0.25V, it operates in temperatures ranging from -55 to 150 °C, making it suitable for various electronic devices.
BUILT-IN BIAS RESISTOR RATIO IS 2.13
-55 Cel
.25 V
NSBC123JDXV6T5
NSBC123JDXV6T5 by Onsemi is a NPN BJT with 2 elements, built-in resistor, hFE of 80. It has max VCE of 50V, IC of 0.1A, and Pdiss of 0.5W. Ideal for switching applications due to its small outline package and silicon element material.
QSX2TR
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 5 A;
5 A
SINGLE
R-PDSO-G6
200 MHz
2DB1689-7
Diodes Incorporated
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 1.5 A;
1.5 A
12 V
R-PDSO-G3
MATTE TIN
300 MHz
2DB1694-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 1 A;
NSTB1002DXV5T1
NSTB1002DXV5T1 by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features cascaded configuration with 2 elements, built-in resistor, and a max collector-emitter voltage of 50V. Ideal for switching applications, this transistor has a min hFE of 30 and peak reflow temperature of 260 °C.
250 MHz
300 ns
70 ns
NSTB1005DXV5T1
NPN AND PNP; Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-F5;
NSBA113EDXV6T1G
NSBA113EDXV6T1G by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 3, VCE of 50V, and IC of 0.1A. It comes in a small outline package suitable for surface mount applications. Ideal for low-power electronic circuits requiring high gain and voltage amplification.
EMC3DXV5T5G
EMC3DXV5T5G by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It has 2 elements, 5 terminals, hFE of 35, VCE of 50V, IC of 0.1A, and Ptot of 0.5W. This transistor operates up to 150 °C with a peak reflow temp of 260°C in a small outline package suitable for surface mount technology.
COMPLEX
Tin (Sn)
BC847BPDXV6T5G
BC847BPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP polarity, 2 separate elements, and hFE of 200. It is used in amplifier applications, has a max power dissipation of 0.5W, operates up to 150 °C, with Vce(max) of 45V.
45 V
200
NOT SPECIFIED
100 MHz
BC847CDXV6T5G
BC847CDXV6T5G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.5W, hFE of 420, and Vce of 45V. With a small outline package style and surface mount capability, it operates up to 150 °C and offers a transition frequency of 100MHz.
420
BC848CDXV6T1G
BC848CDXV6T1G by Onsemi is a NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a min hFE of 420 and can handle a max collector-emitter voltage of 30V. With a small outline package style and peak reflow temperature of 260°C, it offers high performance in compact designs.
BC848CDXV6T5G
BC848CDXV6T5G by Onsemi is a NPN BJT transistor with 2 elements, suitable for amplifier applications. It has a max collector-emitter voltage of 30V, max operating temp of 150 °C, and min DC current gain of 420 (hFE). This small outline package with flat terminals is surface mountable and has a peak reflow temp of 260°C.
BC858CDXV6T5G
BC858CDXV6T5G by Onsemi is a PNP BJT with 2 elements, suitable for amplifier applications. It has a max power dissipation of 0.5W, hFE of 420, and operates up to 150 °C. This small outline transistor features a max VCE of 30V and fT of 100MHz, making it ideal for compact electronic designs.
EMZ1DXV6T1G
The Onsemi EMZ1DXV6T1G is a Small Signal BJT with NPN and PNP types in a plastic/epoxy package. It has 2 elements, 6 terminals, and operates as an amplifier with a max power dissipation of 0.5W. With a min hFE of 120 and max fT of 180MHz, it's suitable for applications requiring high-frequency amplification in compact designs.
EMZ1DXV6T5G
The Onsemi EMZ1DXV6T5G is a Small Signal BJT with NPN and PNP configurations. It has 2 elements, 6 terminals, and a max power dissipation of 0.5W. Ideal for amplifier applications, it operates at up to 150°C, with a max collector-emitter voltage of 60V and transition frequency of 180MHz.
NSBA114EDXV6T5G
NSBA114EDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and max. collector-emitter voltage of 50V. Ideal for small outline applications requiring a transistor with max. power dissipation of 0.5W and min. DC current gain of 35 (hFE). Suitable for surface mount designs needing a compact rectangular package shape.
NSBA123JDXV6T1G
NSBA123JDXV6T1G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and max. power dissipation of 0.5W. It has hFE of 80, VCE of 50V, and IC of 0.1A. Ideal for applications requiring small outline package style in surface mount technology.
BUILT IN BIAS RESISTOR RATIO IS 0.047
NSBA123JDXV6T5G
NSBA123JDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 80. It has max voltage of 50V, current of 0.1A, and power dissipation of 0.5W. Ideal for applications requiring small outline package style in temp up to 150 °C like signal amplification circuits.
NSBA124EDXV6T5G
NSBA124EDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 60. It has VCE of 50V, IC of 0.1A, and Ptot of 0.5W. Ideal for small outline applications requiring high DC current gain and low collector-emitter voltage.
NSBA143TDXV6T5G
NSBA143TDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 160. It has VCE of 50V, IC of 0.1A, and Ptot of 0.5W. Ideal for small outline applications requiring high DC current gain and low collector-emitter voltage.
NSBC124XPDXV6T5G
NSBC124XPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 elements with built-in resistors, a max collector-emitter voltage of 50V, and a min DC current gain of 80 (hFE). With a package style of small outline and surface mount capability, it offers versatility in various electronic designs.
BUILT IN BIAS RESISTOR RATIO IS 2.14
2STR1230
STMicroelectronics
2STR1230 by STMicroelectronics is a compact NPN BJT designed for switching applications. It features a max collector current of 1.5 A, a voltage rating of 30 V, and operates up to 150 °C. Its surface mount design ensures efficient space utilization in electronic circuits.
NSBC114EDXV6T5G
NSBC114EDXV6T5G by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. This small outline package with matte tin finish operates up to 150 °C, making it suitable for various electronic devices.
NSBC123JDXV6T5G
NSBC123JDXV6T5G by Onsemi is a NPN BJT with 2 elements, built-in resistor for switching applications. Features include VCEsat of 0.25V, hFE of 80, and IC of 0.1A. With max operating temp at 150 °C, it's ideal for small outline SMT designs requiring low power dissipation.
FMMT416TA
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;
.5 A
8 pF
100 V
100
40 MHz
.1 V
NSVEMT1DXV6T5G
NSVEMT1DXV6T5G by Onsemi is a PNP BJT with 2 elements, ideal for amplifier applications. It features VCEsat of 0.5V, hFE of 120, and max IC of 0.1A. With a max operating temp of 150 °C and AEC-Q101 standard compliance, it offers high performance in small outline packages.
AEC-Q101
140 MHz
.5 V
MCH5541-TL-E
MCH5541-TL-E by Onsemi is a Small Signal BJT with NPN and PNP channels. It features 0.5W power dissipation, 200 min hFE, and 0.7A max collector current. Ideal for applications requiring surface mount technology in environments up to 150 °C.
.7 A
e6
Tin/Bismuth (Sn/Bi)
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