Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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EMD5DXV6T1G
Onsemi
EMD5DXV6T1G by Onsemi is a dual NPN and PNP BJT with 2 elements, 0.5W power dissipation, hFE of 20, and 0.1A collector current. It is made of silicon for surface mount applications with TIN finish. Ideal for low-power amplification in electronic circuits.
.1 A
20
e3
1
2
260
NPN AND PNP
.5 W
BIP General Purpose Small Signal
YES
TIN
SILICON
NSVB143TPDXV6T1G
NSVB143TPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistor, hFE of 160, VCE of 50V, and IC of 0.1A. This transistor comes in a small outline package suitable for surface mount technology.
BUILT IN BIAS RESISTOR
50 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
160
R-PDSO-F6
6
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
AEC-Q101
FLAT
DUAL
SWITCHING
NSVB144EPDXV6T1G
NSVB144EPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for surface mount applications. Featuring 2 elements, it offers max power dissipation of 0.5W, min hFE of 80, and max IC of 0.1A. Commonly used in low-power electronic circuits due to its silicon transistor element material.
80
FMMT560QTC
Diodes Incorporated
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .15 A;
HIGH RELIABILITY
.15 A
500 V
SINGLE
R-PDSO-G3
3
150 Cel
PNP
Other Transistors
MATTE TIN
GULL WING
30
60 MHz
FMMT491QTC
FMMT491QTC by Diodes Inc. is a NPN BJT transistor with 3 terminals, hFE of 30, and max power dissipation of 0.5W. Ideal for small outline applications requiring a collector-emitter voltage of 60V, operating at up to 150°C. AEC-Q101 certified for automotive use with a transition frequency of 150MHz.
1 A
60 V
NPN
150 MHz
BC548CB1G
Taiwan Semiconductor
BC548CB1G by Taiwan Semiconductor is a NPN BJT with max power dissipation of 0.5W and min hFE of 420. It operates at up to 150°C, handles max IC of 0.1A, and has matte tin terminal finish. Ideal for small signal applications in various electronic circuits due to its single configuration and high DC current gain.
420
NO
10
BC549CB1G
BC549CB1G by Taiwan Semiconductor is a NPN BJT transistor with max. power dissipation of 0.5W, hFE of 420, and VCE of 30V. Ideal for switching applications due to its single configuration and through-hole terminal form in a cylindrical package style. Operating temp ranges from -65°C to 150°C making it suitable for various electronic devices.
30 V
TO-92
O-PBCY-T3
-65 Cel
ROUND
CYLINDRICAL
THROUGH-HOLE
BOTTOM
RN6002
Toshiba
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 2 A;
COLLECTOR
2 A
SINGLE WITH BUILT-IN RESISTOR
50
R-PSSO-F3
e0
1 W
Not Qualified
TIN LEAD
120 MHz
.5 V
NSVB114YPDXV6T1G
NSVB114YPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 elements with built-in resistor, max VCE of 50V, and hFE of 80. This surface-mount transistor has a package style of small outline and complies with AEC-Q101 standards.
BUILT-IN BIAS RESISTOR RATIO 4.7
2SD2153T100V
ROHM
ROHM 2SD2153T100V is a NPN BJT transistor with max VCEsat of 0.5V, hFE of 820, and IC of 2A. Ideal for amplifier applications due to its high transition frequency of 110MHz and low power dissipation. Features single configuration in a small outline package suitable for surface mount technology.
25 V
820
e2
2 W
Tin/Copper (Sn/Cu)
AMPLIFIER
110 MHz
NSBC143TPDXV6T5G
NSBC143TPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, 2 elements with built-in resistor for switching applications. Features include max. collector-emitter voltage of 50V, min. DC current gain of 160 (hFE), and max. power dissipation of 0.5W in a small outline package suitable for surface mount technology.
EMF5XV6T5G
The Onsemi EMF5XV6T5G is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It has a max collector-emitter voltage of 50V, 0.1A max collector current, and 0.5W power dissipation. Ideal for applications requiring compact design and high DC current gain (hFE) in electronic circuits.
BUILT IN BIAS RESISTOR RATIO 1
NSBC114EPDXV6T5G
NSBC114EPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistor, max power dissipation of 0.5W, and can operate at up to 150 °C. Suitable for surface mount designs in various electronic circuits.
BUILT IN BIAS RESISTOR RATIO IS 1
35
NSBC114YPDXV6T5G
NSBC114YPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP channels, 2 elements with built-in resistor. It has a max power dissipation of 0.5W, hFE of 80, and can handle up to 50V collector-emitter voltage. Ideal for switching applications in surface mount designs due to its compact rectangular package style.
BUILT IN BIAS RESISTOR RATIO IS 4.7
NSBC124EPDXV6T5G
NSBC124EPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistors, max power dissipation of 0.5W, and can operate b/w -55 to 150 °C. Suitable for surface mount designs in various electronic circuits.
BUILT IN BIAS RESISTANCE RATIO IS 1
60
-55 Cel
NSBC144EPDXV6T5G
NSBC144EPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements with built-in resistors, a max power dissipation of 0.5W, and can operate at temperatures up to 150 °C. This transistor has a collector-emitter voltage of 50V and a collector current of 0.1A, making it suitable for various electronic circuits requiring low-power amplification or switching functions in compact designs.
KSA992PBU
Fairchild Semiconductor
Fairchild Semiconductor's KSA992PBU is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It offers a min hFE of 200 and can handle a max collector current of 0.05A. With a max power dissipation of 0.5W and operating temperature up to 150°C, it is suitable for various electronic circuits requiring high gain and low power consumption.
LOW NOISE
.05 A
120 V
200
100 MHz
KSA992PTA
Fairchild Semiconductor's KSA992PTA is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. With a max power dissipation of 0.5W and max collector-emitter voltage of 120V, it operates at up to 150°C. Featuring a min hFE of 200 and fT of 100MHz, this transistor is housed in a cylindrical package suitable for through-hole mounting.
PDTB123ES,126
NXP Semiconductors
PNP; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 40; No. of Elements: 1;
.5 A
40
PDTD113ES,126
NPN; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1; Transistor Element Material: SILICON;
33
2N3904,412
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;
.2 A
4 pF
40 V
NOT SPECIFIED
300 MHz
240 ns
65 ns
.3 V
2N3906,116
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;
4.5 pF
250 MHz
300 ns
.4 V
2PA1015GR,126
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .15 A;
7 pF
80 MHz
2PC1815BL,126
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .15 A;
3.5 pF
25
2PC1815GR,126
The NXP Semiconductors 2PC1815GR,126 is a NPN BJT transistor with max VCEsat of 0.3V and max IC of 0.15A. Ideal for amplifier applications, it has a min hFE of 25 and operates up to 150°C. With a cylindrical package style, it features 3 terminals in a through-hole configuration.
2PC1815GR,412
NXP Semiconductors' 2PC1815GR,412 is a NPN BJT transistor with VCEsat of 0.3V and hFE of 200. Ideal for switching applications, it has a max IC of 0.15A and operates up to 150°C. The package is cylindrical with matte tin finish, suitable for through-hole mounting.
2PC1815Y,126
2PC1815Y,412
The NXP Semiconductors 2PC1815Y,412 is a NPN BJT transistor with max VCEsat of 0.3V and hFE of 120. Ideal for switching applications, it has a max IC of 0.15A and operates up to 150°C. With a cylindrical package style, it features 3 terminals and collector-emitter voltage of 50V.
120
BC547C,112
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
45 V
.6 V
BC549C,112
BC549C,112 by NXP Semiconductors is a NPN BJT transistor with max VCEsat of 0.6V and hFE of 420. Ideal for amplifier applications, it has a max IC of 0.1A and operates up to 150°C. Its package is cylindrical with through-hole terminals.
BC556A,112
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
65 V
125
.65 V
BC557B,112
220
250
Tin (Sn)
BC557C,112
BF370,112
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
15 V
500 MHz
PH2369,112
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;
20 ns
10 ns
.25 V
FMMT491-TP
Micro Commercial Components
FMMT491-TP by Micro Commercial Components is a NPN BJT transistor with 3 terminals, hFE of 80, and max. power dissipation of 0.5W. Ideal for small signal applications in electronics due to its high transition frequency of 150MHz and max. collector-emitter voltage of 60V.
KSC1845FBU
KSC1845FBU by Fairchild Semiconductor is a NPN BJT transistor with a min hFE of 300, ideal for amplifier applications. It has a max power dissipation of 0.5W and can operate at temperatures up to 150°C. The package style is cylindrical with matte tin terminal finish and through-hole terminal form.
300
BC847BPDXV6T1
BC847BPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP types. It has 2 elements, 6 terminals, and max power dissipation of 0.5W. Ideal for amplifier applications, it operates up to 150 °C, with max collector-emitter voltage of 45V and transition frequency of 100MHz.
SEPARATE, 2 ELEMENTS
BC858CDXV6T5
BC858CDXV6T5 by Onsemi is a PNP BJT transistor with 2 elements, suitable for amplifier applications. It has a max power dissipation of 0.5W, hFE of 420, and operates up to 150 °C. This small outline transistor features a max VCE of 30V and fT of 100MHz, making it ideal for compact electronic designs requiring high-frequency amplification.
NST3904DXV6T5
The Onsemi NST3904DXV6T5 is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.5W, hFE of 30, and operates up to 150 °C. This small outline transistor offers a max collector-emitter voltage of 40V and transition frequency of 300MHz.
250 ns
70 ns
NST3946DXV6T1
NST3946DXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features 2 separate elements in a small outline package with 6 terminals. With max power dissipation of 0.5W, max collector-emitter voltage of 40V, and transition frequency of 300MHz, it offers efficient performance in various electronic circuits.
NST3946DXV6T5
NST3946DXV6T5 by Onsemi is a Small Signal BJT with NPN and PNP channels. It has 2 elements, 6 terminals, and max power dissipation of 0.5W. Ideal for amplifier applications, it operates at up to 150 °C with a max collector-emitter voltage of 40V and transition frequency of 300MHz.
NSBA113EDXV6T1
NSBA113EDXV6T1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, and max. collector-emitter voltage of 50V. Ideal for switching applications, it has a small outline package style, flat terminals, and can handle up to 0.1A collector current.
NSBA114TDXV6T1
NSBA114TDXV6T1 by Onsemi is a PNP BJT transistor with 2 elements and built-in resistor. It has a max power dissipation of 0.5W, hFE of 160, and VCE of 50V. Ideal for switching applications, this surface-mount device comes in a small outline package with dual terminals.
NSBA114YDXV6T1
NSBA114YDXV6T1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 80. Ideal for switching applications with max IC of 0.1A and VCE of 50V. Features small outline package style, flat terminals, and surface mount capability.
BUILT IN BIAS RESISTOR RATIO IS 0.21
NSBA123EDXV6T1
NSBA123EDXV6T1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of min. 8. It's used for switching applications with max. VCE of 50V and IC of 0.1A. The transistor comes in a small outline package with flat terminals, suitable for surface mount assembly at peak reflow temp of 260 °C within 30s.
8
NSBA123JDXV6T1
NSBA123JDXV6T1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of 80. Ideal for switching applications with max VCE of 50V and IC of 0.1A. Features small outline package, flat terminals, and peak reflow temp of 260 °C.
BUILT IN BIAS RESISTOR RATIO IS 0.047
NSBA124EDXV6T1
NSBA124EDXV6T1 by Onsemi is a PNP BJT transistor with 2 elements, built-in resistor, and hFE of 60. It has a max collector-emitter voltage of 50V and collector current of 0.1A, suitable for switching applications. This surface-mount device in a small outline package is designed for high power dissipation up to 0.5W.
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