Loading...

.5 W Small Signal Bipolar Junction Transistors (BJT) 101

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NSVBC143TPDXV6T1G by Onsemi

NSVBC143TPDXV6T1G

Onsemi

NSVBC143TPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features a max VCEsat of 0.25V, min hFE of 160, and can handle up to 0.1A collector current. With a package style of small outline and operating temperature range from -55°C to 150°C, it's suitable for various electronic designs requiring compact and efficient transistor solutions.

BUILT IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

160

R-PDSO-F6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.5 W

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

.25 V

NSVBC143ZPDXV6T5G by Onsemi

NSVBC143ZPDXV6T5G

Onsemi

NSVBC143ZPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, featuring 2 elements with built-in resistor. With VCEsat of 0.25V, it operates in temperatures from -55 to 150 °C. Ideal for automotive applications due to AEC-Q101 standard compliance and max collector-emitter voltage of 50V.

BUILT IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-F6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.5 W

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

.25 V

NSBC115EPDXV6T1G by Onsemi

NSBC115EPDXV6T1G

Onsemi

NSBC115EPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP types, featuring VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for applications requiring low power dissipation in a compact package, such as signal amplification in electronic circuits.

BUILT IN BAIS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-F6

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

.5 W

YES

FLAT

DUAL

NOT SPECIFIED

SILICON

.25 V

BCW66KG-E6433 by Infineon Technologies

BCW66KG-E6433

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

.8 A

45 V

SINGLE

40

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.5 W

AEC-Q101

Other Transistors

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

170 MHz

NSVBC123JDXV6T5G by Onsemi

NSVBC123JDXV6T5G

Onsemi

NSVBC123JDXV6T5G by Onsemi is a NPN BJT transistor with 0.25 V max VCEsat, 80 min hFE, and 50 V max VCE. It is used for switching applications in automotive electronics due to its AEC-Q101 reference standard compliance and 0.1 A max IC.

BUILT-IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-F6

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.5 W

AEC-Q101

YES

FLAT

DUAL

SWITCHING

SILICON

.25 V