Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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ST13007DFP
STMicroelectronics
ST13007DFP by STMicroelectronics is a NPN BJT transistor with 400V VCEO, 8A IC, and 36W Ptot. It's used for switching applications due to its single configuration with built-in diode. The package style is flange mount with through-hole terminals in a rectangular shape.
ISOLATED
8 A
400 V
SINGLE WITH BUILT-IN DIODE
8
TO-220AB
R-PSFM-T3
e3
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NPN
36 W
Not Qualified
Other Transistors
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
MJL4281A
Onsemi
The Onsemi MJL4281A is a NPN BJT transistor with 230W power dissipation, ideal for amplifier applications. It has a max collector-emitter voltage of 350V, max collector current of 15A, and min DC current gain of 10. The package style is flange mount with through-hole terminals in a rectangular shape.
15 A
350 V
10
TO-264AA
e0
235
230 W
TIN LEAD
AMPLIFIER
35 MHz
MJL4302A
The Onsemi MJL4302A is a PNP BJT transistor with 230W power dissipation, 350V max. collector-emitter voltage, and 15A max. collector current. Ideal for amplifier applications, it has a min hFE of 10 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
PNP
BD436T
The Onsemi BD436T is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 36W and max collector current of 4A. With a min hFE of 50 and fT of 3MHz, it operates at up to 150 °C, making it suitable for high-power electronic circuits.
4 A
32 V
50
TO-225AA
3 MHz
ST2310FX
ST2310FX by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.
7 A
600 V
6.5
245
55 W
NOT SPECIFIED
MJE15034
MJE15034 by Onsemi is a NPN BJT transistor with 50W power dissipation, 350V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications due to its single configuration and 30MHz transition frequency. Package style is flange mount with through-hole terminals.
COLLECTOR
50 W
30 MHz
MJE15035
MJE15035 by Onsemi is a PNP BJT transistor with 50W power dissipation, 350V max. collector-emitter voltage, and 4A max. collector current. Ideal for amplifier applications, it has a min hFE of 10 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.
MJD44H11-001
Onsemi's MJD44H11-001 is a NPN BJT transistor with 80V VCE, 8A IC, and 20W Pd. Ideal for switching applications, it has hFE of 40, operates up to 150 °C, and features SILICON element material. Suitable for various power electronics projects requiring high-speed performance.
80 V
40
R-PSIP-T3
IN-LINE
20 W
Tin/Lead (Sn/Pb)
30
85 MHz
MJD45H11-001
MJD45H11-001 by Onsemi is a PNP BJT transistor with 80V VCEO, 8A IC, and 20W power dissipation. Ideal for switching applications, it has a min hFE of 40 and operates up to 150 °C. The package style is in-line with through-hole terminals.
90 MHz
BUL1203EFP
BUL1203EFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 550 V, a power dissipation of 36 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.
5 A
550 V
9
ST2001FX
ST2001FX by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.
10 A
5
STC03DE150
STC03DE150 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 100W, a collector current of 3A, and a min DC gain (hFE) of 3.5. This versatile transistor comes in a flange mount package with through-hole terminals.
3 A
SINGLE WITH BUILT-IN FET AND DIODE
3.5
R-PSFM-T4
4
100 W
STC03DE170
STC03DE170 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 100W, a collector current of 3A, and a min DC gain (hFE) of 3.5. Its compact flange mount design ensures efficient performance in various electronic circuits.
STE50DE100
STE50DE100 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 400W, supports up to 50A collector current, and operates at temperatures up to 150 °C. Its robust design ensures reliability in demanding environments.
50 A
R-PUFM-X4
400 W
NICKEL
UNSPECIFIED
UPPER
MC1413PG
MC1413PG by Onsemi is a NPN power bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 0.5A. It is commonly used for switching applications due to its high DC current gain (hFE) of 1000.
LOGIC LEVEL COMPATIBLE
.5 A
50 V
COMPLEX
1000
R-PDIP-T16
7
16
-20 Cel
260
Tin (Sn)
DUAL
STW2040
STW2040 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 125 W, operates up to 150 °C, and supports collector-emitter voltages up to 500 V. Ideal for high-performance electronic circuits.
20 A
500 V
TO-247
125 W
STX13005G-AP
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2.8 W; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 8;
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
2.8 W
BOTTOM
STX13005G
STX13005G by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 3A. It has a min. DC current gain of 8, suitable for switching applications with a max. power dissipation of 2.8W in cylindrical package style for through-hole mounting at up to 150°C operating temperature.
BD676G
BD676G by Onsemi is a PNP power BJT with 40W max power dissipation, ideal for amplifier applications. Featuring a Darlington configuration with built-in diode and resistor, it offers a min hFE of 750. With a max collector current of 4A and operating temperature of 150 °C, this transistor is designed for high-performance in various electronic circuits.
45 V
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
750
40 W
MPSW42RLRAG
MPSW42RLRAG by Onsemi is a NPN BJT with max VCEsat of 0.5V, hFE of 40, and max IC of 0.5A. Ideal for power applications in temperatures ranging from -55 to 150 °C, it features a collector-emitter voltage of 300V. Its through-hole package makes it suitable for various cylindrical power designs.
3 pF
300 V
e1
-55 Cel
1 W
2.5 W
TIN SILVER COPPER
50 MHz
.5 V
BD436TG
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 36 W; Maximum Collector Current (IC): 4 A;
TIN
BDW47G
BDW47G by Onsemi is a PNP power BJT with 85W max power dissipation, 100V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, this transistor has a min hFE of 250 and fT of 4MHz.
100 V
250
85 W
4 MHz
BD679AG
BD679AG by Onsemi is a NPN Power BJT with 40W power dissipation, 750 min hFE, and 80V VCE. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with through-hole terminals.
MC1413BPG
MC1413BPG by Onsemi is a NPN BJT transistor with 16 terminals. It has a hFE of 1000, IC of 0.5A, and VCE of 50V. Primarily used for switching applications due to its complex configuration and max operating temperature of 150°C.
MJE210G
MJE210G by Onsemi is a PNP BJT transistor with 40V VCE, 5A IC, and 1.5W power dissipation. Ideal for amplifier applications due to its high transition frequency of 65MHz and single configuration in a plastic/epoxy package. Operating up to 150°C, it has through-hole terminals with matte tin finish.
40 V
TO-225
1.5 W
65 MHz
MJE800G
MJE800G by Onsemi is a NPN power BJT with 40W Pd, 750 hFE, and 60V Vce. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, it has a max collector current of 4A and transition frequency of 1MHz.
BUILT IN BIAS RESISTOR
60 V
1 MHz
MJF18008G
The Onsemi MJF18008G is a NPN BJT transistor with 450V VCEO, 8A IC, and 45W Ptot. Ideal for switching applications, it has a min hFE of 6 and operates up to 150°C. Its package style is flange mount with through-hole terminals.
450 V
6
45 W
UL RECOGNIZED
13 MHz
MJF3055G
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 10 A;
90 V
30 W
2 MHz
TIP111G
TIP111G by Onsemi is a NPN BJT with Darlington configuration, ideal for amplifier applications. It features 50W power dissipation, 80V max collector-emitter voltage, and 2A max collector current. The package is rectangular with through-hole terminals and can operate up to 150°C.
2 A
500
TIP125G
TIP125G by Onsemi is a PNP power BJT with 65W max power dissipation, ideal for amplifier applications. Featuring a Darlington configuration with built-in diode and resistor, it has a hFE of 1000 and can handle up to 5A collector current. With a max operating temperature of 150°C and collector-emitter voltage of 60V, this transistor is suitable for various electronic projects.
65 W
2STA1837
2STA1837 by STMicroelectronics is a PNP BJT designed for amplifier applications. It features a max collector-emitter voltage of 230V, a min DC current gain (hFE) of 100, and operates up to 150 °C. Its flange mount design ensures reliable performance in various electronic circuits.
1 A
230 V
100
70 MHz
2STC4793
2STC4793 by STMicroelectronics is an NPN power BJT ideal for amplifier applications. It features a max collector-emitter voltage of 230V, a min DC current gain (hFE) of 100, and operates up to 150 °C. Its through-hole design ensures easy integration in various circuits.
100 MHz
STX117-AP
STX117-AP by STMicroelectronics is a PNP Darlington BJT designed for efficient switching applications. It features a max power dissipation of 1.2W, a min DC current gain (hFE) of 500, and operates up to 150 °C. Its cylindrical package ensures reliable performance in various electronic circuits.
BUILT IN BIAS RESISTANCE RATIO IS 0.0067
O-PBCY-W3
1.2 W
WIRE
D44C12G
D44C12G by Onsemi is a NPN Power BJT with 80V VCEO, 4A IC, and 30W Ptot. Ideal for switching applications, it has a min hFE of 20 and operates up to 150 °C. The transistor comes in a plastic package with through-hole terminals.
20
40 MHz
D45C12G
D45C12G by Onsemi is a PNP BJT transistor with 80V VCEO, 4A IC, and 30W power dissipation. Ideal for switching applications, it has a min hFE of 20 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.
ST13003DN
ST13003DN by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 20W, and operates up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.
TO-126
TIP112-BP
Micro Commercial Components
TIP112-BP by Micro Commercial Components is a NPN BJT with hFE of 1000, IC of 2A, and VCE of 100V. Ideal for power applications in temperatures up to 150°C, featuring a single terminal configuration in a rectangular package.
TIP120-BP
TIP120-BP by Micro Commercial Components is a NPN Darlington BJT with hFE of 1000, VCE of 60V, and IC of 5A. Ideal for amplifier applications, it features a plastic/epoxy body, through-hole terminals, and matte tin finish.
DARLINGTON
TIP122-BP
TIP122-BP by Micro Commercial Components is a NPN Darlington BJT with hFE of 1000, VCE of 100V, and IC of 5A. It is used in power applications requiring high current gain and voltage handling capabilities. The package style is flange mount with through-hole terminals for easy installation.
Matte Tin (Sn)
TIP31C-BP
TIP31C-BP by Micro Commercial Components is a NPN BJT transistor with hFE of 25, IC of 3A, and VCE of 100V. Ideal for power applications due to its high operating temp of 150°C and fT of 3MHz. Its through-hole package makes it suitable for various electronic designs.
25
BD135G
The Onsemi BD135G is a NPN BJT transistor with 45V VCE, 1.5A IC, and 12.5W Ptot. Ideal for amplifier applications, it operates b/w -55°C to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
1.5 A
12.5 W
MJL1302AG
The Onsemi MJL1302AG is a PNP power BJT with 200W max power dissipation, 260V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications, it has a min hFE of 45 and operates up to 150°C. The transistor comes in a plastic/epoxy package with flange mount style and through-hole terminals.
260 V
45
200 W
2N6667G
2N6667G by Onsemi is a PNP BJT with 10A IC, 60V VCE, and 2W power dissipation. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Operates up to 150 °C with hFE of at least 100, making it suitable for high-power tasks.
2 W
MJ21193G
MJ21193G by Onsemi is a PNP BJT with 250V VCE, 16A IC, and 250W power dissipation. Ideal for amplifier applications due to its single configuration and high hFE of 8. The transistor's silicon element and flange mount package make it suitable for high-power setups.
16 A
250 V
TO-204AA
O-MBFM-P2
2
200 Cel
METAL
250 W
PIN/PEG
MJD31C1G
The Onsemi MJD31C1G is a NPN BJT transistor with 3 terminals, capable of handling up to 15W power dissipation. With a max collector-emitter voltage of 100V and max collector current of 3A, it's ideal for amplifier applications. Featuring a min DC current gain of 10 and operating temperature up to 150°C, this transistor offers reliable performance in various electronic circuits.
15 W
MJF127G
The Onsemi MJF127G is a PNP Power BJT with Darlington configuration, built-in diode, and resistor. It has a max power dissipation of 30W and can handle up to 5A collector current. Ideal for switching applications in various industries due to its high DC current gain of 2000.
2000
MJW21191G
The Onsemi MJW21191G is a PNP BJT transistor with 150V VCE, 8A IC, and 125W power dissipation. Ideal for amplifier applications, it has a min hFE of 5 and operates up to 150 °C. The package style is flange mount with a rectangular shape and through-hole terminals.
150 V
TO-247AE
MJW21192G
MJW21192G by Onsemi is a NPN Power BJT with 125W power dissipation, 150V max collector-emitter voltage, and 8A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material.
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