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NO Power Bipolar Junction Transistors (BJT) 428

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
STP12IE90F4 by STMicroelectronics

STP12IE90F4

STMicroelectronics

STP12IE90F4 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 21W, supports up to 12A collector current, and operates at temperatures up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

ISOLATED

12 A

SINGLE WITH BUILT-IN FET AND DIODE

5

TO-220

R-PSFM-T4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

21 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

KSD1691YSTSTU by Fairchild Semiconductor

KSD1691YSTSTU

Fairchild Semiconductor

KSD1691YSTSTU by Fairchild Semiconductor is a NPN Power BJT with 20W power dissipation, hFE of 160, and 60V VCE. Ideal for applications requiring a single configuration transistor in through-hole package style, such as power amplifiers or voltage regulators.

5 A

60 V

SINGLE

160

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SILICON

2STL1360 by STMicroelectronics

2STL1360

STMicroelectronics

2STL1360 by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector current of 3 A, a power dissipation of 1.2 W, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management in various electronic circuits.

3 A

60 V

SINGLE

160

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

1.2 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

130 MHz

BUL416T by STMicroelectronics

BUL416T

STMicroelectronics

BUL416T by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 110W, operates up to 150 °C, and supports collector-emitter voltages up to 800V. Ideal for high-performance electronic circuits.

6 A

800 V

SINGLE

18

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

110 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUL741FP by STMicroelectronics

BUL741FP

STMicroelectronics

BUL741FP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 60W, a collector-emitter voltage of 400V, and operates up to 150 °C. Ideal for high-power circuits with through-hole mounting.

ISOLATED

2.5 A

400 V

SINGLE

25

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

60 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MD2009DFP by STMicroelectronics

MD2009DFP

STMicroelectronics

MD2009DFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 700 V, a power dissipation of 40 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

ISOLATED

10 A

700 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

UL RECOGNIZED

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STD840DN40 by STMicroelectronics

STD840DN40

STMicroelectronics

STD840DN40 by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, a power dissipation of 3W, and operates at up to 150 °C. Its dual-element configuration ensures reliable performance in various electronic circuits.

4 A

400 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

8

R-PDIP-T8

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

NPN

3 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

DUAL

NOT SPECIFIED

SWITCHING

SILICON

2ST5949 by STMicroelectronics

2ST5949

STMicroelectronics

2ST5949 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 250W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance power management in various electronic devices.

COLLECTOR

17 A

250 V

SINGLE

35

TO-3

O-MBFM-P2

e3

1

1

2

150 Cel

METAL

ROUND

FLANGE MOUNT

NPN

250 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

SWITCHING

SILICON

25 MHz

2STA1694 by STMicroelectronics

2STA1694

STMicroelectronics

2STA1694 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 80W, operates up to 150 °C, and supports collector-emitter voltages of 120V. Its robust design ensures reliable performance in various electronic circuits.

8 A

120 V

SINGLE

70

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

80 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

20 MHz

2STA2120 by STMicroelectronics

2STA2120

STMicroelectronics

2STA2120 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 200W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

17 A

250 V

SINGLE

35

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

200 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

25 MHz

2STC2510 by STMicroelectronics

2STC2510

STMicroelectronics

2STC2510 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 125W, operates up to 150 °C, and supports collector-emitter voltages of 100V. Ideal for high-performance electronic circuits.

25 A

100 V

SINGLE

40

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

20 MHz

2STC4467 by STMicroelectronics

2STC4467

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 8 A;

8 A

120 V

SINGLE

70

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

80 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

20 MHz

2STC5948 by STMicroelectronics

2STC5948

STMicroelectronics

2STC5948 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 200W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

17 A

250 V

SINGLE

35

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

200 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

25 MHz

2STC5949 by STMicroelectronics

2STC5949

STMicroelectronics

2STC5949 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 220W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

17 A

250 V

SINGLE

35

TO-264AA

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

220 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

25 MHz

2STW4466 by STMicroelectronics

2STW4466

STMicroelectronics

2STW4466 by STMicroelectronics is a powerful NPN BJT designed for amplifier applications. It features a max power dissipation of 60 W, operates up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for high-performance electronic circuits.

6 A

80 V

SINGLE

50

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

60 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

20 MHz

STW13009 by STMicroelectronics

STW13009

STMicroelectronics

STW13009 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V, max. collector current of 12A, and max. power dissipation of 125W. Ideal for switching applications due to its single configuration and silicon element material in a rectangular package shape with through-hole terminals.

12 A

400 V

SINGLE

10

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STWH13009 by STMicroelectronics

STWH13009

STMicroelectronics

STWH13009 from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 125W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for high-power circuits with through-hole mounting.

12 A

400 V

SINGLE

11

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BUL742CFP by STMicroelectronics

BUL742CFP

STMicroelectronics

BUL742CFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 30W, a collector-emitter voltage of 400V, and operates up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

ISOLATED

4 A

400 V

SINGLE

25

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

30 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BUL49DFP by STMicroelectronics

BUL49DFP

STMicroelectronics

BUL49DFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 34W, a collector-emitter voltage of 450V, and operates up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

ISOLATED

5 A

450 V

SINGLE WITH BUILT-IN DIODE

4

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

34 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BULD741-1 by STMicroelectronics

BULD741-1

STMicroelectronics

BULD741-1 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 30W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient circuit designs in various electronic devices.

2.5 A

400 V

SINGLE

25

TO-251

R-PSIP-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

30 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STX616 by STMicroelectronics

STX616

STMicroelectronics

STX616 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 2.8W, operates up to 150 °C, and supports collector-emitter voltages up to 500V. Its cylindrical package ensures efficient thermal management in various electronic circuits.

1.5 A

500 V

SINGLE

4

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

2.8 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

2STA1695 by STMicroelectronics

2STA1695

STMicroelectronics

2STA1695 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 100W, collector-emitter voltage of 140V, and operates up to 150 °C. Its through-hole design ensures easy integration into various electronic circuits.

10 A

140 V

SINGLE

50

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

100 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

AMPLIFIER

SILICON

20 MHz

2STA1943 by STMicroelectronics

2STA1943

STMicroelectronics

2STA1943 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 150W, operates up to 150 °C, and supports collector-emitter voltages of 230V. Its robust design ensures reliable performance in demanding environments.

15 A

230 V

SINGLE

35

TO-264AA

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

150 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

30 MHz

2STC4468 by STMicroelectronics

2STC4468

STMicroelectronics

2STC4468 by STMicroelectronics is a NPN BJT transistor with 140V VCE, 10A IC, and 100W power dissipation. Ideal for amplifier applications due to its 20MHz fT, 50 hFE, and -55 to +150°C operating range. Packaged in plastic/epoxy with through-hole terminals for easy mounting.

10 A

140 V

SINGLE

50

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

100 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

AMPLIFIER

SILICON

20 MHz

2STC5200 by STMicroelectronics

2STC5200

STMicroelectronics

2STC5200 by STMicroelectronics is a NPN BJT transistor with max. power dissipation of 150W, max. collector-emitter voltage of 230V, and max. collector current of 15A. It is used as an amplifier in applications requiring high power handling capabilities and operates at temperatures up to 150°C.

15 A

230 V

SINGLE

35

TO-264AA

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

150 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

30 MHz

BU900TP by STMicroelectronics

BU900TP

STMicroelectronics

NPN; Configuration: DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 370 V;

5 A

370 V

DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR

7000

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

55 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STT13005 by STMicroelectronics

STT13005

STMicroelectronics

STT13005 from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 45W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.

2 A

700 V

SINGLE

8

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

45 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NJW0281G by Onsemi

NJW0281G

Onsemi

NJW0281G by Onsemi is a NPN BJT with 150W power dissipation, 250V max collector-emitter voltage, and 30MHz fT. Ideal for amplifier applications due to its single configuration and high hFE of 75. The transistor's flange mount package with matte tin finish makes it suitable for through-hole mounting in various electronic devices.

15 A

250 V

SINGLE

75

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

150 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

NJW21193G by Onsemi

NJW21193G

Onsemi

NJW21193G by Onsemi is a PNP BJT transistor with 250V VCEO, 16A IC, and 200W power dissipation. Ideal for amplifier applications, it has a min hFE of 8 and operates up to 150°C. The package style is flange mount with a rectangular shape and through-hole terminals.

16 A

250 V

SINGLE

8

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

2ST2121 by STMicroelectronics

2ST2121

STMicroelectronics

2ST2121 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 250W, operates up to 200 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

COLLECTOR

17 A

250 V

SINGLE

35

TO-3

O-MBFM-P2

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

NOT SPECIFIED

PNP

250 W

Not Qualified

Other Transistors

NO

PIN/PEG

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

25 MHz

2STA1962 by STMicroelectronics

2STA1962

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 15 A;

15 A

230 V

SINGLE

35

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

130 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

30 MHz

2STC5242 by STMicroelectronics

2STC5242

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 15 A;

15 A

230 V

SINGLE

35

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

130 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

30 MHz

2STW1693 by STMicroelectronics

2STW1693

STMicroelectronics

2STW1693 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 60 W, operates up to 150 °C, and supports collector-emitter voltages of 80 V. Its robust design ensures reliable performance in demanding environments.

6 A

80 V

SINGLE

50

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

60 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

20 MHz

STH13009 by STMicroelectronics

STH13009

STMicroelectronics

STH13009 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 100W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.

12 A

400 V

SINGLE

11

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

100 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STL128DNFP by STMicroelectronics

STL128DNFP

STMicroelectronics

STL128DNFP by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 28W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.

ISOLATED

4 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

28 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STL128DN by STMicroelectronics

STL128DN

STMicroelectronics

STL128DN by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400 V, a power dissipation of 40 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

COLLECTOR

4 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

40 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

TR136 by STMicroelectronics

TR136

STMicroelectronics

TR136 by STMicroelectronics is an NPN BJT designed for switching applications, featuring a max power dissipation of 60W and a collector-emitter voltage of 400V. It operates at up to 150 °C with a min DC current gain (hFE) of 10. Its through-hole design ensures easy integration in various electronic circuits.

3 A

400 V

SINGLE

10

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

60 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

TR236 by STMicroelectronics

TR236

STMicroelectronics

TR236 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 70W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for high-performance electronic circuits.

4 A

400 V

SINGLE

8

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

70 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BULB7216-1 by STMicroelectronics

BULB7216-1

STMicroelectronics

BULB7216-1 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 80W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance power management solutions.

3 A

700 V

SINGLE

4

TO-262AA

R-PSIP-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

NPN

80 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

2STA2121 by STMicroelectronics

2STA2121

STMicroelectronics

2STA2121 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 220W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

17 A

250 V

SINGLE

35

TO-264AA

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

220 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

25 MHz

2STA2510 by STMicroelectronics

2STA2510

STMicroelectronics

2STA2510 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 125W, operates up to 150 °C, and supports collector-emitter voltages of 100V. Ideal for high-performance electronic circuits.

25 A

100 V

SINGLE

40

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

20 MHz

BULB742C-1 by STMicroelectronics

BULB742C-1

STMicroelectronics

BULB742C-1 by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 70W, a collector-emitter voltage of 400V, and operates up to 150 °C. This versatile transistor is ideal for various electronic circuits.

COLLECTOR

4 A

400 V

SINGLE

25

TO-262AA

R-PSIP-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

70 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MD1803DFP by STMicroelectronics

MD1803DFP

STMicroelectronics

MD1803DFP from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.

ISOLATED

10 A

700 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

5.5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MD2103DFP by STMicroelectronics

MD2103DFP

STMicroelectronics

MD2103DFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 700 V, a power dissipation of 38 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

ISOLATED

6 A

700 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

6.5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

38 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STBV32G-AP by STMicroelectronics

STBV32G-AP

STMicroelectronics

STBV32G-AP by STMicroelectronics is a single NPN BJT designed for efficient switching applications. It features a max power dissipation of 1.5 W, operates up to 150 °C, and supports collector-emitter voltages up to 400 V. Ideal for various electronic circuits requiring reliable performance.

1.5 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STBV32G by STMicroelectronics

STBV32G

STMicroelectronics

STBV32G by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 1.5W, and operates up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

1.5 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STE07DE220 by STMicroelectronics

STE07DE220

STMicroelectronics

STE07DE220 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 220 W, operates at up to 125 °C, and supports a collector current of 7 A. Ideal for high-performance electronic circuits, it comes in a flange mount package.

ISOLATED

7 A

SINGLE WITH BUILT-IN FET AND DIODE

R-XUFM-X4

1

4

125 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NPN

220 W

Not Qualified

BIP General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

STW3040 by STMicroelectronics

STW3040

STMicroelectronics

STW3040 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 160 W, operates up to 150 °C, and supports collector-emitter voltages of 400 V. Ideal for high-performance electronic circuits.

30 A

400 V

SINGLE

10

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

160 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON