Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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ZTX718STOA
Diodes Incorporated
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2.5 A;
2.5 A
30 pF
20 V
SINGLE
15
R-PSIP-W3
1
3
200 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
PNP
1 W
1.5 W
NO
WIRE
SILICON
180 MHz
.26 V
ZTX718STOB
ZTX718STZ
e3
260
MATTE TIN
30
ZTX618STOA
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 3.5 A;
3.5 A
40
NPN
140 MHz
.255 V
ZTX618STOB
ZTX618STZ
2STL2580
STMicroelectronics
2STL2580 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 1A. It has a min. DC current gain of 60, suitable for switching applications with a max. power dissipation of 1.5W in cylindrical package style for through-hole mounting at up to 150 °C operating temperature.
1 A
400 V
60
TO-92
O-PBCY-T3
150 Cel
ROUND
CYLINDRICAL
Other Transistors
THROUGH-HOLE
BOTTOM
SWITCHING
STX0560
STX0560 by STMicroelectronics is a NPN BJT transistor with 600V VCE, 1A IC, and 1.5W power dissipation. Ideal for switching applications due to its single configuration in a cylindrical package with matte tin finish.
600 V
70
ST26025A
ST26025A by STMicroelectronics is a PNP BJT with Darlington configuration, ideal for switching applications. It offers a max power dissipation of 160W, hFE of 200, and max collector current of 20A. With a max operating temp of 200 °C and VCE of 100V, it's suitable for high-power electronic systems.
BUILT IN BIAS RESISTANCE RATIO IS 0.01
COLLECTOR
20 A
100 V
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
200
O-MBFM-P2
2
METAL
FLANGE MOUNT
160 W
Matte Tin (Sn)
PIN/PEG
2STL2580-AP
2STL2580-AP by STMicroelectronics is a NPN BJT with 1A IC, 60 hFE, and 1.5W Pd. Ideal for power applications, it operates up to 150 °C making it suitable for various electronic designs requiring high current amplification in a single configuration.
BD135TG
Onsemi
The Onsemi BD135TG is a NPN BJT with max power dissipation of 1.25W, hFE of 40, and IC of 1.5A. Ideal for power applications where a single configuration is needed, operating up to 150 °C.
1.5 A
1.25 W
BD652-S
Bourns
The Bourns BD652-S is a PNP Darlington transistor with 750 min hFE, 120V VCE, and 8A IC. Ideal for power applications in industries like automotive and telecommunications due to its high current gain and collector-emitter voltage capabilities.
8 A
120 V
DARLINGTON
750
TO-220AB
R-PSFM-T3
NOT SPECIFIED
STT13005D-K
STT13005D-K by STMicroelectronics is a NPN BJT with 400V VCE, 2A IC, and 45W Ptot. Ideal for switching applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.
2 A
SINGLE WITH BUILT-IN DIODE
8
TO-126
45 W
TTC3710B
Toshiba
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 12 A;
ISOLATED
12 A
80 V
30 W
80 MHz
IGP01N120H2XKSA1
Infineon Technologies
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3.2 A; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Terminal Position: SINGLE;
3.2 A
1200 V
NOT APPLICABLE
Not Qualified
BD438TG
The Onsemi BD438TG is a PNP BJT with max power dissipation of 36W, hFE of 85, and IC of 4A. Ideal for applications requiring high-power amplification in temperature range -55 to 150°C. Suitable for single configuration setups needing reliable performance with fT of 3MHz.
4 A
85
36 W
3 MHz
BD651-S
The Bourns BD651-S is a NPN Darlington transistor with 750 min hFE, 120V VCE, and 8A IC. Ideal for power applications in industries like automotive and telecommunications due to its high current gain and collector-emitter voltage capabilities.
APT13005SI-G1
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 3.2 A; Minimum Operating Temperature: -65 Cel;
450 V
11
TO-251
R-PSIP-T3
-65 Cel
4 MHz
APT13005STF-G1
APT13005SU-G1
Diodes Inc.'s APT13005SU-G1 is a NPN BJT transistor with max. collector-emitter voltage of 450V, ideal for switching applications. With a max. collector current of 3.2A and transition frequency of 4MHz, it operates b/w -65 to 150°C. The package style is flange mount with matte tin terminal finish in a rectangular shape.
2SB1203S-H
The Onsemi 2SB1203S-H is a NPN BJT transistor with max VCEsat of 0.4V, IC of 5A, and hFE of 35. Ideal for switching applications due to its high transition frequency of 180MHz and low collector-emitter voltage of 50V. With a power dissipation of 20W, it's suitable for various power electronics designs.
5 A
40 pF
50 V
35
e6
20 W
TIN BISMUTH
.4 V
2SD1803T-H
The Onsemi 2SD1803T-H is a PNP BJT transistor with VCEsat of 0.55V, IC of 5A, and hFE of 35. Ideal for switching applications, it has a max power dissipation of 20W and operates at temperatures up to 150°C. The package style is in-line with through-hole terminals.
60 pF
130 MHz
.55 V
BD243CS
Motorola
BD243CS by Motorola is a NPN BJT transistor with 100V VCE, 6A IC, and 65W Pd. Ideal for switching applications due to its single configuration and through-hole terminals. With a min hFE of 15 and fT of 3MHz, it offers reliable performance in various electronic circuits.
6 A
65 W
BDX53CS
BDX53CS by Motorola is a NPN Darlington transistor with a min DC current gain of 750 and max collector-emitter voltage of 100V. Ideal for switching applications, it has a max collector current of 8A. This through-hole transistor in plastic/epoxy package is suitable for flange mount installations.
BDX54CS
Motorola's BDX54CS is a PNP power BJT with a Darlington configuration. It has a max collector-emitter voltage of 100V and max collector current of 8A, making it ideal for switching applications. With a min hFE of 750, this transistor is designed for high-performance in various electronic circuits.
TIP41CN
TIP41CN by Motorola is a NPN power BJT with 100V VCE, 6A IC, and 65W Pd. Ideal for switching applications, it has hFE of 15 and fT of 3MHz. The transistor comes in a plastic/epoxy package with flange mount style and through-hole terminals.
TIP42AS
Motorola TIP42AS is a PNP BJT transistor with 60V VCE, 6A IC, and 65W power dissipation. Ideal for switching applications due to its single configuration and 3MHz fT. Package style is flange mount with through-hole terminals.
60 V
TIP42CN
Motorola's TIP42CN is a PNP power BJT with 100V VCE, 6A IC, and 65W Pd. Ideal for switching applications, it has hFE of 15 and fT of 3MHz. The transistor comes in a plastic/epoxy package with through-hole terminals for easy mounting.
SGS112
STMicroelectronics' SGS112 is a NPN BJT transistor with Darlington configuration, ideal for switching applications. It features a max VCEsat of 2.5V and can handle up to 50W power dissipation. With a min hFE of 500, it operates at temperatures up to 150 °C, making it suitable for various electronic devices.
500
e0
50 W
TIN LEAD
2.5 V
ZTX953STZ
Zetex Plc
ZTX953STZ by Zetex Plc is a PNP power BJT transistor with a max VCEsat of 0.33V and a max collector current of 3.5A. It is commonly used for switching applications due to its high DC current gain (hFE) of 30 and low collector-emitter voltage (VCE).
10
125 MHz
.33 V
NTE2322
Nte Electronics
NTE2322 by Nte Electronics is a PNP BJT with 4 elements, ideal for amplifier applications. Features include hFE of 30, VCE of 40V, and fT of 200MHz. The package style is in-line with 14 terminals in a rectangular shape for through-hole mounting.
.6 A
40 V
SEPARATE, 4 ELEMENTS
R-PDIP-T14
4
14
DUAL
AMPLIFIER
200 MHz
NTE378
NTE378 by Nte Electronics is a PNP BJT transistor with 80V VCE, 10A IC, and 50W power dissipation. Ideal for switching applications due to its high hFE of 40 and fT of 40MHz. The package style is flange mount with through-hole terminals.
10 A
40 MHz
NTE2325
NTE2325 by Nte Electronics is a NPN BJT transistor with 800V max collector-emitter voltage, 3A max collector current, and 50W max power dissipation. Ideal for switching applications due to its single configuration and high transition frequency of 15MHz. Package style is flange mount with through-hole terminals.
3 A
800 V
15 MHz
BUF460AV
BUF460AV by STMicroelectronics is a NPN BJT transistor with max VCEsat of 2V, IC of 90A, and Pmax of 270W. Ideal for switching applications due to its fast tf of 200ns and high VCEO of 450V. Package style is flange mount with isolated case connection.
90 A
200 ns
R-XUFM-X3
UNSPECIFIED
270 W
BIP General Purpose Power
NICKEL
UPPER
2 V
BDX53BFP
BDX53BFP by STMicroelectronics is a power bipolar junction transistor (BJT) with NPN polarity. It has a max VCEsat of 2V and can handle a max collector current (IC) of 8A. This transistor is commonly used for switching applications.
29 W
25 W
BUL213
BUL213 by STMicroelectronics is a NPN Power BJT with 600V VCE, 3A IC, and 0.9V VCEsat. Ideal for switching applications, it has a max power dissipation of 60W and operates up to 150 °C. The transistor's hFE is 16, making it suitable for various industrial uses.
HIGH RELIABILITY
16
60 W
6420 ns
.9 V
BUL138
BUL138 by STMicroelectronics is a NPN Power BJT transistor with 400V VCE, 5A IC, and 1V VCEsat. Ideal for switching applications, it has a max power dissipation of 80W and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
80 W
70 W
1500 ns
1 V
BUL416
BUL416 by STMicroelectronics is a NPN power BJT transistor with max VCEsat of 3V, IC of 6A, and hFE of 10. Ideal for switching applications, it has a max power dissipation of 85W and operates at up to 150 °C. The package style is flange mount with matte tin terminal finish.
110 W
85 W
3 V
BUL58D
BUL58D by STMicroelectronics is a NPN Power BJT with 450V VCE, 8A IC, and 75W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150°C. Package style is flange mount with through-hole terminals.
5
75 W
1980 ns
BULK128D-B
STMicroelectronics BULK128D-B is a NPN Power BJT with VCEsat of 1.5V, IC of 4A, and hFE of 8. Ideal for switching applications, it has a max VCE of 400V and Ptot of 55W in a plastic/epoxy package with matte tin finish.
55 W
1.5 V
ESM3030DV
ESM3030DV by STMicroelectronics is a NPN power bipolar junction transistor (BJT) with a max VCEsat of 2.2V and max collector current (IC) of 100A. It is commonly used for switching applications due to its built-in diode and fast fall time of 600ns.
100 A
300 V
DARLINGTON WITH BUILT-IN DIODE
600 ns
R-XUFM-X4
225 W
2.2 V
ESM2012DV
ESM2012DV by STMicroelectronics is an NPN BJT with a Darlington configuration and built-in diode, ideal for switching applications. It has a max VCEsat of 2V, can handle a collector current of 120A, and dissipate up to 175W. With an operating temperature of 150 °C, it's suitable for high-power industrial applications.
120 A
125 V
300 ns
175 W
ESM2030DV
ESM2030DV by STMicroelectronics is an NPN BJT transistor with a Darlington configuration and built-in diode, ideal for switching applications. It features a max VCEsat of 2.2V, max IC of 67A, and can handle up to 150W power dissipation. With a max operating temperature of 150 °C and collector-emitter voltage of 300V, it is suitable for high-power electronic circuits.
67 A
150 W
BULT118
STMicroelectronics BULT118 is a NPN Power BJT with 400V VCE, 2A IC, and 1.5V VCEsat. Ideal for switching applications, it has a max power dissipation of 45W at 150 °C ambient temp. Package: PLASTIC/EPOXY RECTANGULAR with THROUGH-HOLE terminals in FLANGE MOUNT style.
40 W
4900 ns
BUT30V
STMicroelectronics' BUT30V is an NPN BJT transistor with a max VCE of 125V and IC of 100A. Ideal for switching applications, it has a low VCEsat of 0.9V and fast fall time of 200ns. With a power dissipation of 250W, it operates up to 150°C making it suitable for high-power electronic systems.
250 W
2200 ns
SGSD100
STMicroelectronics SGSD100 is a NPN BJT with Darlington configuration, built-in diode and resistor. Ideal for switching applications with max VCEsat of 3.5V, hFE of 300, and IC of 25A. Operates up to 150 °C, with max power dissipation of 130W in a rectangular package suitable for flange mount.
25 A
300
TO-247
130 W
TIN
3.5 V
SGSD200
SGSD200 by STMicroelectronics is a PNP BJT transistor with Darlington configuration, ideal for switching applications. It features a max VCEsat of 3.5V, hFE of 300, and can handle up to 25A collector current. With a max power dissipation of 130W and operating temperature of 150 °C, it is suitable for high-power electronic circuits.
BUL39D
BUL39D by STMicroelectronics is a NPN Power BJT with 450V VCE, 4A IC, and 70W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150°C. The transistor has a hFE of at least 4 and a turn-off time of 1600ns, making it suitable for high-power tasks.
1600 ns
1.1 V
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