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NTE378

Nte Electronics

NTE378 by Nte Electronics

NTE378 by Nte Electronics is a PNP BJT transistor with 80V VCE, 10A IC, and 50W power dissipation. Ideal for switching applications due to its high hFE of 40 and fT of 40MHz. The package style is flange mount with through-hole terminals.

Median Price

$3.380

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 450 parts In-Stock

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$2.340

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DigiKey Marketplace

USA . 4 parts In-Stock

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$3.380

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$2.810

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Hutch & Son

USA . 3 parts In-Stock

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$3.380

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Ace Electronics

USA . 1 parts In-Stock

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$4.220

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American Microsemiconductor Inc.

USA . 15 parts In-Stock

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$8.070

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Vyrian

USA . 5,055 parts In-Stock

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Electronic Expediters

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Prism Electronics

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MISTER SPROCKETS

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Powertech Controls

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Electronic Supply

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Netroflash

USA . 100 parts In-Stock

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$2.340

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AZTECH Wire

Italy . 413 parts In-Stock

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$11.395

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Microchip USA

USA . 2,711 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Overview

Enhance your electronic projects with the NTE378 Power Bipolar Junction Transistor by Nte Electronics. Known for their top-quality components, Nte Electronics delivers reliable performance and durability. The NTE378, a PNP transistor designed for switching applications, offers a maximum power dissipation of 50W and a maximum collector-emitter voltage of 80V. Whether you're a hobbyist or a professional, this transistor provides the value, benefits, and advantages you need to take your projects to the next level. Trust Nte Electronics for all your electronic component needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for efficient current flow and operation in switching applications.

Configuration: SINGLE

The single configuration simplifies circuit design and installation, making it easy to incorporate into different systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high performance and reliability in switching circuits.

Package Shape: RECTANGULAR

The rectangular package shape provides easy mounting and integration into electronic systems.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for secure connections and easy soldering during installation.

Maximum Power Dissipation (Abs): 50 W

With a high maximum power dissipation, this transistor can handle power efficiently and effectively in demanding applications.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating ensures reliable operation and protection against voltage spikes in the circuit.

Maximum Collector Current (IC): 10 A

The high collector current rating allows for the handling of large currents, making it suitable for applications that require high current switching.

Nominal Transition Frequency (fT): 40 MHz

The high nominal transition frequency enables fast switching speeds and high-frequency operation in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NTE378 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Nte Electronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

50 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NTE378 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Nte Electronics

Founded in New Jersey in 1979, NTE Electronics, Inc has grown from a small-town supplier with ten semiconductors in its entire line to the largest aftermarket semiconductor supplier in the industry. Today, our product line consists of over 23,000 devices. Included in this offering is NTE Brand Semiconductors. In January 2001 NTE acquired the assets of the ECG division of Philips N.A. With this addition, NTE became the industry leader in supplying private label aftermarket electronic components to the Industrial, Commercial, Consumer, and MRO marketplace. NTE is a Master Distributor for some of the industry's major manufacturers of electronic components and accessories. NTE's 40,000 square foot headquarters in Bloomfield, NJ houses, under one roof, all the essential services and inventory to continually supply electronic components to its worldwide network of authorized distributors. NTE's warehouse maintains a large inventory of each device to ensure a 98% fill rate and an average 24-hour shipping time. NTE devices are quality tested to consistently assure that they meet or exceed the industry specifications of the device they are replacing. They have been used in NASA space projects, German automobiles, hospital/medical applications and in virtually every type of consumer item. NTE's global network of distributors extends across the United States, Canada, Latin America, the Caribbean and 35 other countries throughout the world. No matter how you measure success, NTE Electronics, Inc has become the leader in the replacement electronic component industry.

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