Loading...

NO Power Bipolar Junction Transistors (BJT) 428

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
TIP35CP by STMicroelectronics

TIP35CP

STMicroelectronics

TIP35CP by STMicroelectronics is a NPN Power BJT with 125W power dissipation, 100V max. collector-emitter voltage, and 25A max. collector current. It is used in applications requiring high-power amplification or switching such as audio amplifiers and power supplies due to its robust design and high operating temperature of 150°C.

25 A

100 V

SINGLE

10

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

3 MHz

TIP36CP by STMicroelectronics

TIP36CP

STMicroelectronics

TIP36CP by STMicroelectronics is a PNP BJT with 125W power dissipation, 100V max collector-emitter voltage, and 25A max collector current. Ideal for high-power applications requiring a single configuration transistor in a rectangular package with through-hole terminals.

25 A

100 V

SINGLE

10

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

3 MHz

BUT11AI,127 by NXP Semiconductors

BUT11AI,127

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 5 A; Maximum Power Dissipation Ambient: 100 W;

COLLECTOR

5 A

450 V

SINGLE

14

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

100 W

100 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4800 ns

1000 ns

1.5 V

BUT11APX,127 by NXP Semiconductors

BUT11APX,127

NXP Semiconductors

NXP Semiconductors' BUT11APX,127 is a NPN BJT transistor with 450V max collector-emitter voltage and 5A max collector current. It has a 32W power dissipation for switching applications at up to 150°C operating temperature. The package is rectangular with through-hole terminals in plastic/epoxy material.

ISOLATED

5 A

450 V

SINGLE

14

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

32 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUT11APX-1200,127 by NXP Semiconductors

BUT11APX-1200,127

NXP Semiconductors

NXP Semiconductors' BUT11APX-1200,127 is a NPN BJT transistor with 550V VCE, 6A IC, and 32W Ptot. Ideal for switching applications in power electronics due to its high voltage and current ratings. Package style is flange mount with through-hole terminals for easy installation.

ISOLATED

6 A

550 V

SINGLE

20

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

32 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUT12AI,127 by NXP Semiconductors

BUT12AI,127

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; Maximum Collector Current (IC): 8 A; Transistor Element Material: SILICON;

COLLECTOR

8 A

450 V

SINGLE

14

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

110 W

110 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4800 ns

1000 ns

1.5 V

BUT12AX,127 by NXP Semiconductors

BUT12AX,127

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 23 W; Maximum Collector Current (IC): 8 A; Terminal Form: THROUGH-HOLE;

ISOLATED

8 A

450 V

SINGLE

10

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

23 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PHE13005X,127 by NXP Semiconductors

PHE13005X,127

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 26 W; Maximum Collector Current (IC): 4 A; Transistor Application: SWITCHING;

ISOLATED

4 A

400 V

SINGLE

10

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

26 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

TIP127-BP by Micro Commercial Components

TIP127-BP

Micro Commercial Components

TIP127-BP by Micro Commercial Components is a PNP Power BJT with hFE of 1000, VCEO of 100V, and IC of 5A. Ideal for applications requiring high current amplification in electronic circuits. Package style: Flange Mount, Terminal finish: Matte Tin, and operating temp up to 150°C.

5 A

100 V

SINGLE

1000

TO-220AB

R-PSFM-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

Not Qualified

NO

MATTE TIN

THROUGH-HOLE

SINGLE

10

SILICON

TIP41A-BP by Micro Commercial Components

TIP41A-BP

Micro Commercial Components

TIP41A-BP by Micro Commercial Components is a NPN BJT transistor with max. 60V VCE, 6A IC, and 3MHz fT. Ideal for power applications requiring high DC current gain (hFE) of min. 30. Package style: FLANGE MOUNT in PLASTIC/EPOXY material for through-hole mounting at up to 150°C operating temp.

6 A

60 V

SINGLE

30

TO-220AB

R-PSFM-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

Not Qualified

NO

MATTE TIN

THROUGH-HOLE

SINGLE

10

SILICON

3 MHz

STL106D by STMicroelectronics

STL106D

STMicroelectronics

STL106D by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 1.5W, a collector-emitter voltage of 230V, and operates up to 150 °C. Its cylindrical package with through-hole terminals ensures easy integration in circuits.

1.5 A

230 V

SINGLE WITH BUILT-IN DIODE

4

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

1.5 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

STD845DN40 by STMicroelectronics

STD845DN40

STMicroelectronics

STD845DN40 from STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, a power dissipation of 3W, and operates at up to 150 °C. Its dual-element configuration ensures efficient performance in various electronic circuits.

4 A

400 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

12

R-PDIP-T8

e3

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

3 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

DUAL

SWITCHING

SILICON

BULT106D by STMicroelectronics

BULT106D

STMicroelectronics

BULT106D by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 230 V, a power dissipation of 32 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

2 A

230 V

SINGLE WITH BUILT-IN DIODE

4

TO-126

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

32 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

MJW1302A by Onsemi

MJW1302A

Onsemi

The Onsemi MJW1302A is a PNP BJT transistor with 230V VCE, 15A IC, and 200W power dissipation. Ideal for amplifier applications, it has a min hFE of 12 and operates up to 150 °C. The package style is flange mount with a rectangular shape and through-hole terminals.

COLLECTOR

15 A

230 V

SINGLE

12

TO-247AD

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

MJW21193 by Onsemi

MJW21193

Onsemi

MJW21193 by Onsemi is a PNP BJT transistor with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material. Package style is flange mount with through-hole terminals.

ISOLATED

16 A

250 V

SINGLE

8

TO-247

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

MJW21194 by Onsemi

MJW21194

Onsemi

MJW21194 by Onsemi is a NPN Power BJT with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and 4MHz transition frequency. The transistor's plastic/epoxy package body and flange mount style make it suitable for through-hole mounting in various electronic devices.

ISOLATED

16 A

250 V

SINGLE

8

TO-247

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

MJW21195 by Onsemi

MJW21195

Onsemi

MJW21195 by Onsemi is a PNP BJT transistor with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material. Package style is flange mount with through-hole terminals.

COLLECTOR

16 A

250 V

SINGLE

8

TO-247AD

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

MJW21196 by Onsemi

MJW21196

Onsemi

MJW21196 by Onsemi is a NPN Power BJT with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and silicon transistor element material. The package style is flange mount with through-hole terminals.

COLLECTOR

16 A

250 V

SINGLE

8

TO-247AD

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

MJW3281A by Onsemi

MJW3281A

Onsemi

MJW3281A by Onsemi is a NPN BJT transistor with 230V max collector-emitter voltage, 15A max collector current, and 200W max power dissipation. Ideal for amplifier applications due to its single configuration and silicon element material. The package style is flange mount with through-hole terminals.

COLLECTOR

15 A

230 V

SINGLE

12

TO-247AD

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

STBV32-AP by STMicroelectronics

STBV32-AP

STMicroelectronics

STBV32-AP from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 1.1W, and operates up to 150 °C. Its cylindrical package and through-hole terminals ensure easy integration in various circuits.

1.5 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STK13003 by STMicroelectronics

STK13003

STMicroelectronics

STK13003 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient circuit designs in various electronic devices.

1.5 A

400 V

SINGLE

5

R-PSIP-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BULK128 by STMicroelectronics

BULK128

STMicroelectronics

BULK128 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for robust electronic designs requiring efficient performance.

4 A

400 V

SINGLE

14

R-PSIP-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

55 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

APT13005DI-G1 by Diodes Incorporated

APT13005DI-G1

Diodes Incorporated

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 4 A; Package Body Material: PLASTIC/EPOXY;

4 A

450 V

DARLINGTON WITH BUILT-IN DIODE

8

TO-251

R-PSIP-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

4 MHz

APT13005DT-G1 by Diodes Incorporated

APT13005DT-G1

Diodes Incorporated

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 4 A; Package Style (Meter): FLANGE MOUNT;

4 A

450 V

DARLINGTON WITH BUILT-IN DIODE

8

TO-220AB

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

4 MHz

APT13005DTF-G1 by Diodes Incorporated

APT13005DTF-G1

Diodes Incorporated

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 8;

ISOLATED

4 A

450 V

DARLINGTON WITH BUILT-IN DIODE

8

TO-220AB

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

4 MHz

STT13005D by STMicroelectronics

STT13005D

STMicroelectronics

STT13005D from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 45W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for high-performance electronic circuits.

2 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

45 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUT70W by STMicroelectronics

BUT70W

STMicroelectronics

BUT70W by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 200 W, operates up to 150 °C, and supports collector-emitter voltages of 125 V. Ideal for high-performance electronic circuits.

125 V

SINGLE

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUX98APW by STMicroelectronics

BUX98APW

STMicroelectronics

BUX98APW by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 200 W, operates up to 150 °C, and supports collector-emitter voltages of 450 V. Ideal for high-performance electronic circuits.

24 A

450 V

SINGLE

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BD437T by Onsemi

BD437T

Onsemi

The Onsemi BD437T is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 36W and max collector current of 4A. With a min DC current gain of 40, it operates at up to 150 °C, making it suitable for high-power electronic circuits.

4 A

45 V

SINGLE

40

TO-225AA

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

36 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BD682T by Onsemi

BD682T

Onsemi

BD682T by Onsemi is a PNP BJT transistor with 40W power dissipation, 4A collector current, and 10MHz transition frequency. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.

4 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225AA

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

40 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

10 MHz

ST1802FH by STMicroelectronics

ST1802FH

STMicroelectronics

ST1802FH by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.

ISOLATED

10 A

600 V

SINGLE

4

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

TIP142TU by Fairchild Semiconductor

TIP142TU

Fairchild Semiconductor

TIP142TU by Fairchild Semiconductor is a NPN power BJT with Darlington configuration, 125W power dissipation, and 10A collector current. Ideal for high-power applications requiring a max collector-emitter voltage of 100V and min DC current gain of 500 hFE. Commonly used in flange mount setups due to its rectangular package shape.

10 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

125 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SILICON

BD13710S by Fairchild Semiconductor

BD13710S

Fairchild Semiconductor

Fairchild Semiconductor's BD13710S is a NPN BJT transistor with 60V VCE, 1.5A IC, and 13W Ptot. Ideal for switching applications, it has a min hFE of 63 and operates up to 150°C. The package style is flange mount with matte tin finish in a rectangular shape.

1.5 A

60 V

SINGLE

63

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

13 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

250 MHz

BD238S by Fairchild Semiconductor

BD238S

Fairchild Semiconductor

Fairchild Semiconductor's BD238S is a PNP BJT transistor with 80V VCE, 2A IC, and 25W power dissipation. Ideal for switching applications due to its single configuration and 3MHz fT. The through-hole package with matte tin finish makes it suitable for various electronic designs.

2 A

80 V

SINGLE

25

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

25 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BDW93CFTU by Fairchild Semiconductor

BDW93CFTU

Fairchild Semiconductor

Fairchild Semiconductor's BDW93CFTU is a NPN power BJT with 100V VCEO, 12A IC, and 30W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode in a plastic/epoxy package suitable for flange mount. Operating up to 150°C, it offers high DC current gain of hFE ≥100.

ISOLATED

12 A

100 V

DARLINGTON WITH BUILT-IN DIODE

100

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

30 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BDX34BTU by Fairchild Semiconductor

BDX34BTU

Fairchild Semiconductor

Fairchild Semiconductor's BDX34BTU is a PNP Darlington transistor with 70W power dissipation, 80V collector-emitter voltage, and 10A collector current. Ideal for switching applications, it has a min DC current gain of 750 and operates up to 150°C. The package style is flange mount with matte tin terminal finish in a rectangular shape.

10 A

80 V

DARLINGTON

750

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

70 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BDX53BTU by Fairchild Semiconductor

BDX53BTU

Fairchild Semiconductor

Fairchild Semiconductor's BDX53BTU is a NPN Darlington transistor with built-in diode, ideal for switching applications. With a max collector-emitter voltage of 80V and max collector current of 8A, it can handle up to 60W power dissipation. This through-hole transistor has a min DC current gain of 750 and operates at temperatures up to 150°C.

8 A

80 V

DARLINGTON WITH BUILT-IN DIODE

750

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

60 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

20 MHz

KSA1220AYSTSTU by Fairchild Semiconductor

KSA1220AYSTSTU

Fairchild Semiconductor

KSA1220AYSTSTU by Fairchild is a PNP BJT transistor with 160 min hFE, 1.2A IC, and 175MHz fT. Ideal for amplifier applications, it has a max operating temperature of 150°C and can handle up to 20W power dissipation in a rectangular package with matte tin finish.

1.2 A

160 V

SINGLE

160

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

175 MHz

KSC5042MSTU by Fairchild Semiconductor

KSC5042MSTU

Fairchild Semiconductor

KSC5042MSTU by Fairchild Semiconductor is a NPN Power BJT with 900V VCEO, 0.1A IC, and 4W Ptot. Ideal for switching applications due to its single configuration and hFE of 30. Features through-hole terminals in a rectangular package suitable for flange mounting.

HIGH RELIABILITY

.1 A

900 V

SINGLE

30

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

4 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST2310DHI by STMicroelectronics

ST2310DHI

STMicroelectronics

ST2310DHI from STMicroelectronics is a robust NPN BJT designed for efficient switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages of 600V. Ideal for high-performance electronic circuits.

ISOLATED

12 A

600 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

5.5

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

55 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

KSC2335YTU by Fairchild Semiconductor

KSC2335YTU

Fairchild Semiconductor

KSC2335YTU by Fairchild Semiconductor is a NPN BJT transistor with 400V VCEO, 7A IC, and 40W Ptot. Ideal for switching applications due to its single configuration and hFE of 40. Package style is flange mount with through-hole terminals.

7 A

400 V

SINGLE

40

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

KSD401FYTU by Fairchild Semiconductor

KSD401FYTU

Fairchild Semiconductor

KSD401FYTU by Fairchild Semiconductor is a NPN BJT transistor with 150V VCEO, 2A IC, and 25W Ptot. It is commonly used in amplifier applications due to its hFE of 120 and fT of 5MHz. The package style is flange mount with a rectangular shape and through-hole terminals.

ISOLATED

2 A

150 V

SINGLE

120

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

25 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

5 MHz

STSA851-AP by STMicroelectronics

STSA851-AP

STMicroelectronics

STSA851-AP by STMicroelectronics is a NPN BJT transistor with 60V VCEO, 5A IC, and 130MHz fT. Ideal for switching applications, it has a single configuration in a cylindrical package with matte tin finish. Operating up to 150°C, it offers a min hFE of 30 and dissipation of 1.1W.

5 A

60 V

SINGLE

30

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

130 MHz

STSA851 by STMicroelectronics

STSA851

STMicroelectronics

STSA851 by STMicroelectronics is a NPN BJT transistor with 60V VCEO, 5A IC, and 130MHz fT. Ideal for switching applications, it has a max power dissipation of 1.1W in a cylindrical package with matte tin finish for through-hole mounting.

5 A

60 V

SINGLE

30

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

130 MHz

ST83003 by STMicroelectronics

ST83003

STMicroelectronics

ST83003 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient circuit designs with through-hole mounting.

1.5 A

400 V

SINGLE

4

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST93003 by STMicroelectronics

ST93003

STMicroelectronics

ST93003 by STMicroelectronics is a PNP BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient power management in electronic circuits.

1.5 A

400 V

SINGLE

4

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STD1805-1 by STMicroelectronics

STD1805-1

STMicroelectronics

STD1805-1 from STMicroelectronics is a robust NPN BJT designed for switching applications, featuring a max power dissipation of 15W and collector current of 5A. It operates efficiently up to 150 °C with a collector-emitter voltage of 60V. Ideal for various electronic circuits, it ensures reliable performance in compact designs.

5 A

60 V

SINGLE

20

TO-251AA

R-PSIP-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

15 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

150 MHz

STSA1805 by STMicroelectronics

STSA1805

STMicroelectronics

STSA1805 from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 1.1W, operates up to 150 °C, and supports collector-emitter voltages up to 60V. Ideal for efficient circuit designs in various electronic devices.

5 A

60 V

SINGLE

20

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

150 MHz