Loading...

BUT11APX,127

NXP Semiconductors

BUT11APX,127 by NXP Semiconductors

NXP Semiconductors' BUT11APX,127 is a NPN BJT transistor with 450V max collector-emitter voltage and 5A max collector current. It has a 32W power dissipation for switching applications at up to 150°C operating temperature. The package is rectangular with through-hole terminals in plastic/epoxy material.

Median Price

-

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 11,805 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,805

-

-

-

-

VNN

France . 4,027 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,027

-

-

-

-

Digiode

USA . 2,696 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,696

-

-

-

-

Anansix

USA . 566 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

566

-

-

-

-

Bristol Electronics

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Dan-Mar Components

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Nova Conductors

Japan . 72 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

72

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 51,149 parts In-Stock

1+ parts

$0.319

100+ parts

-

1k+ parts

-

10k+ parts

-

51,149

$0.319

-

-

-

Corohmni

South Africa . 60 parts In-Stock

1+ parts

$0.953

100+ parts

-

1k+ parts

-

10k+ parts

-

60

$0.953

-

-

-

AZTECH Wire

Italy . 443 parts In-Stock

1+ parts

$8.999

100+ parts

-

1k+ parts

-

10k+ parts

-

443

$8.999

-

-

-

Ampacity Inc.

Singapore . 888 parts In-Stock

1+ parts

$25.050

100+ parts

-

1k+ parts

-

10k+ parts

-

888

$25.050

-

-

-

One Stop Electronics

USA . 1,110 parts In-Stock

1+ parts

$30.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,110

$30.050

-

-

-

Semicontronic

India . 946 parts In-Stock

1+ parts

$61.050

100+ parts

$59.524

1k+ parts

$59.218

10k+ parts

-

946

$61.050

$59.524

$59.218

-

QUARKTWIN TECHNOLOGY LTD

USA . 19,104 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

19,104

-

-

-

-

Continental Prestige Electronics

USA . 3,121 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,121

-

-

-

-

Argo Parts USA

USA . 2,656 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,656

-

-

-

-

Corphita

USA . 2,081 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,081

-

-

-

-

UNI Independent Distributors

Spain . 661 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

661

-

-

-

-

Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Overview

Upgrade your power systems with the BUT11APX,127 by NXP Semiconductors. This high-quality Power BJT offers reliable switching capabilities, making it ideal for a wide range of applications. With a maximum collector-emitter voltage of 450V and maximum operating temperature of 150°C, this transistor ensures efficient performance even in demanding environments. Trust NXP's expertise in semiconductor manufacturing to deliver superior quality and reliability. Experience the value and benefits of this product today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching circuits, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design and integration, especially in applications requiring individual control of transistors.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in on/off operations.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement on circuit boards, optimizing space usage.

Terminal Form: THROUGH-HOLE

Enables secure and reliable connections to the circuit board, reducing the risk of connection issues.

Maximum Power Dissipation (Abs): 32 W

With a high power dissipation rating, this transistor can handle demanding applications without overheating.

Package Style (Meter): FLANGE MOUNT

Allows for easy and secure attachment to the circuit or heat sink, improving thermal management.

Minimum DC Current Gain (hFE): 14

Ensures stable amplification and switching characteristics, making the transistor reliable in various conditions.

Maximum Operating Temperature: 150 °C

Can handle high-temperature environments, expanding the range of applications where the transistor can be used.

Maximum Collector-Emitter Voltage: 450 V

Supports high-voltage applications, providing versatility in circuit design.

Transistor Element Material: SILICON

Silicon transistors offer good performance characteristics and reliability, making this transistor a dependable choice.

Maximum Collector Current (IC): 5 A

With a high collector current rating, this transistor can handle high-current applications with ease.

Terminal Finish: MATTE TIN

Provides corrosion resistance and ensures good solderability, enhancing the reliability of connections.

Terminal Position: SINGLE

Simplifies circuit design and layout, ideal for applications where individual transistor control is needed.

Case Connection: ISOLATED

Provides electrical isolation between the transistor and the mounting surface, improving reliability and safety in the circuit.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUT11APX,127 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

14

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUT11APX,127 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20