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BUT11AF

Onsemi

BUT11AF by Onsemi

BUT11AF by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 450V, ideal for switching applications with max. power dissipation of 40W. Its single configuration and through-hole terminal form make it suitable for various electronic devices requiring high current amplification and voltage control in a flange mount package style.

Median Price

$1.890

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

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Tomark Electronics Ltd

UK . 100 parts In-Stock

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$1.890

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Digiode

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Anansix

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Halfin

Belgium . 1,983 parts In-Stock

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Q Components

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ComSIT Distribution GmbH

Germany . 375 parts In-Stock

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Vyrian

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Huijzer Components

Netherlands . 343 parts In-Stock

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ECAB

Sweden . 137 parts In-Stock

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LittleDiode

UK . 108 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 63 parts In-Stock

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GES GmbH

Germany . 38 parts In-Stock

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MISTER SPROCKETS

USA . 6 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 4 parts In-Stock

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Holdelec - ElecDif-Pro

France . 4 parts In-Stock

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Donberg Electronics Ltd

Ireland . 2 parts In-Stock

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First Choice Components Inc.

USA . 2 parts In-Stock

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Distributors (Availability)

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Component Stockers USA

USA . 2,094 parts In-Stock

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$1.330

100+ parts

$1.260

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$1.220

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$1.330

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Corohmni

South Africa . 104 parts In-Stock

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$1.890

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One Stop Electronics

USA . 1,044 parts In-Stock

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$40.050

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Kepictronics

USA . 15,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 8,668 parts In-Stock

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SupplyDigital Components

Austria . 7,458 parts In-Stock

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Kulean Microsystems

USA . 4,875 parts In-Stock

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UNI Independent Distributors

Spain . 4,483 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 2,875 parts In-Stock

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Northwest PG Solutions

USA . 2,838 parts In-Stock

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TANS Electronics

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Authorized Procurement Solutions

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Supply Digital

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Alle Elektronik GmbH

Germany . 1,733 parts In-Stock

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Native Components

USA . 1,552 parts In-Stock

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UHIMA Technologies

Türkiye . 645 parts In-Stock

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Assy Fe

Spain . 385 parts In-Stock

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Perfect Parts

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Overview

Unleash the power of innovation with the BUT11AF by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by industry leader Onsemi, this NPN transistor offers unparalleled reliability and performance. With a maximum power dissipation of 40W and a maximum collector-emitter voltage of 450V, the BUT11AF delivers exceptional value and benefits to customers seeking efficient and dependable solutions for their electronic projects. Upgrade your designs with the BUT11AF and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material provides durability and reliability to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration into existing circuits and provides compatibility with other components.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it a cost-effective choice for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high performance and efficiency in controlling electrical circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and installation, making it convenient for circuit board layout.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure connections and ease of soldering, ensuring reliable operation in various environments.

Maximum Power Dissipation (Abs): 40 W

With a maximum power dissipation of 40W, this transistor can handle high-power applications with efficiency and reliability.

Maximum Collector-Emitter Voltage: 450 V

The high maximum collector-emitter voltage of 450V makes this transistor suitable for applications requiring high voltage switching.

Maximum Collector Current (IC): 5 A

With a maximum collector current of 5A, this transistor can handle high current loads, making it ideal for power switching applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures reliable performance even in high-temperature environments.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUT11AF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUT11AF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-17-108-3275, 5961171083275

NIIN

171083275

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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