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BUT11AFTU

Onsemi

BUT11AFTU by Onsemi

BUT11AFTU by Onsemi is a NPN BJT transistor with 450V VCEO and 5A IC, ideal for switching applications. It has a max power dissipation of 40W and operates up to 150°C. The package style is flange mount with through-hole terminals, making it suitable for high-power electronic circuits.

Median Price

$1.387

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 129 parts In-Stock

1+ parts

$0.158

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$0.158

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-

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129

$0.158

$0.158

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Arrow

USA . 3 parts In-Stock

1+ parts

$1.055

100+ parts

$0.736

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-

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3

$1.055

$0.736

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Farnell

UK . 1,861 parts In-Stock

1+ parts

$2.120

100+ parts

$0.943

1k+ parts

$0.725

10k+ parts

-

1,861

$2.120

$0.943

$0.725

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Mouser Electronics

USA . 3,041 parts In-Stock

1+ parts

$2.720

100+ parts

$1.230

1k+ parts

$1.220

10k+ parts

$0.932

3,041

$2.720

$1.230

$1.220

$0.932

DigiKey

USA . 234 parts In-Stock

1+ parts

$2.760

100+ parts

$1.224

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-

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234

$2.760

$1.224

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Element14

Singapore . 1,861 parts In-Stock

1+ parts

$4.000

100+ parts

$1.780

1k+ parts

$1.420

10k+ parts

$1.400

1,861

$4.000

$1.780

$1.420

$1.400

Future Electronics

Canada . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.815

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$0.775

1,000

-

$0.815

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$0.775

RS (Exports)

UK . 220 parts In-Stock

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100+ parts

$1.387

1k+ parts

$1.327

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220

-

$1.387

$1.327

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Rochester

USA . 73 parts In-Stock

1+ parts

-

100+ parts

$1.110

1k+ parts

$0.921

10k+ parts

$0.821

73

-

$1.110

$0.921

$0.821

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,053 parts In-Stock

1+ parts

$0.150

100+ parts

-

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3,053

$0.150

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TME

Poland . 15 parts In-Stock

1+ parts

$2.070

100+ parts

$1.290

1k+ parts

$1.170

10k+ parts

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15

$2.070

$1.290

$1.170

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Flip Electronics

USA . 6,000 parts In-Stock

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6,000

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VNN

France . 884 parts In-Stock

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884

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NAC Semi

USA . 700 parts In-Stock

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$1.400

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700

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$1.400

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Vyrian

USA . 647 parts In-Stock

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647

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 328 parts In-Stock

1+ parts

$0.134

100+ parts

$0.131

1k+ parts

$0.130

10k+ parts

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328

$0.134

$0.131

$0.130

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Corphita

USA . 1,851 parts In-Stock

1+ parts

$0.142

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1,851

$0.142

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Corohmni

South Africa . 165 parts In-Stock

1+ parts

$0.158

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165

$0.158

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Ampacity Inc.

Singapore . 334 parts In-Stock

1+ parts

$0.690

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334

$0.690

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Continental Prestige Electronics

USA . 440 parts In-Stock

1+ parts

$1.480

100+ parts

$0.664

1k+ parts

$0.600

10k+ parts

-

440

$1.480

$0.664

$0.600

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Aztec Data Supply Inc.

USA . 3,512 parts In-Stock

1+ parts

$1.648

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3,512

$1.648

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QUARKTWIN TECHNOLOGY LTD

USA . 10,653 parts In-Stock

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TANS Electronics

Latvia . 5,247 parts In-Stock

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Problanco Electronics

Mexico . 4,796 parts In-Stock

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Argo Parts USA

USA . 4,337 parts In-Stock

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Perfect Parts

USA . 3,751 parts In-Stock

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Kulean Microsystems

USA . 3,583 parts In-Stock

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3,583

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Eastek

USA . 800 parts In-Stock

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800

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Supply Digital

USA . 562 parts In-Stock

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562

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UHIMA Technologies

Türkiye . 254 parts In-Stock

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254

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Aranea Global

USA . 50 parts In-Stock

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50

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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SupplyDigital Components

Austria . 7 parts In-Stock

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7

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Overview

Discover the power of the BUT11AFTU by Onsemi, a high-quality Power Bipolar Junction Transistor designed for efficient switching applications. Manufactured by Onsemi, known for their superior craftsmanship and reliability, this NPN transistor offers customers unmatched value and performance. With a maximum collector-emitter voltage of 450V and a maximum operating temperature of 150°C, this transistor is perfect for a variety of electronic projects where precision and durability are essential. Upgrade your designs with the BUT11AFTU and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

The NPN type transistor allows for easy integration into NPN circuit designs, offering versatility in switching applications.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it ideal for straightforward switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable and efficient performance in switching circuits.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact and space-saving design, making it suitable for various mounting configurations.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy and secure soldering onto a PCB, ensuring stable connections for reliable operation.

Maximum Power Dissipation (Abs): 40 W

With a maximum power dissipation of 40W, this transistor can handle high power loads, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides a secure and stable mounting option for the transistor, ensuring proper heat dissipation and mechanical support.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments, ensuring reliable performance under tough conditions.

Maximum Collector-Emitter Voltage: 450 V

The high maximum collector-emitter voltage of 450V allows for operation in high voltage circuits, expanding the range of applications for this transistor.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides excellent electrical properties and reliability, ensuring consistent performance over time.

Maximum Collector Current (IC): 5 A

With a maximum collector current of 5A, this transistor can handle high current loads, making it suitable for applications that require high power switching.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and protection against corrosion, ensuring reliable connections and long-term durability.

Terminal Position: SINGLE

The single terminal position simplifies the installation process and ensures proper alignment, making it easy to integrate this transistor into circuits.

Case Connection: ISOLATED

The isolated case connection helps prevent interference and ensures proper thermal management, enhancing the overall performance and reliability of the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUT11AFTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

450 V

Configuration:

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUT11AFTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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