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BUT11AFI

STMicroelectronics

BUT11AFI by STMicroelectronics

STMicroelectronics' BUT11AFI is a NPN BJT transistor with max VCEsat of 1.5V and IC of 5A, ideal for switching applications. With a max power dissipation of 35W and VCEO of 450V, it operates at up to 150 °C, featuring through-hole terminals in a rectangular package.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Digiode

USA . 2,779 parts In-Stock

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Anansix

USA . 624 parts In-Stock

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Vyrian

USA . 454 parts In-Stock

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454

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ECAB

Sweden . 3 parts In-Stock

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IDEA Electronic Components Group

UK . 531 parts In-Stock

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$0.917

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$0.826

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531

$0.917

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$0.826

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MKK Technologies

India . 2,028 parts In-Stock

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$1.725

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$1.725

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DigiPath Technology Company

USA . 2,028 parts In-Stock

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$1.725

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$1.725

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Kepictronics

USA . 15,000 parts In-Stock

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Corphita

USA . 4,792 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Northwest PG Solutions

USA . 538 parts In-Stock

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Parana Technologies

USA . 108 parts In-Stock

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$1.097

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Native Components

USA . 24 parts In-Stock

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Overview

Power up your projects with the BUT11AFI power bipolar junction transistor by STMicroelectronics. Designed with high-quality materials and manufacturing processes, this NPN transistor is perfect for switching applications. Its impressive maximum collector-emitter voltage of 450V and maximum power dissipation of 35W ensure reliable performance even in demanding conditions. Whether you're working on industrial automation or automotive electronics, the BUT11AFI offers unmatched value, efficiency, and versatility. Upgrade your designs today with this top-of-the-line component from STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and durable, ensuring a longer lifespan.

Polarity or Channel Type: NPN

The NPN channel type allows for easy integration into NPN transistor circuits, making it versatile for a variety of applications.

Configuration: SINGLE

The single configuration simplifies the use of the transistor in circuits, reducing complexity and potential issues in design.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and efficient performance.

Maximum VCEsat: 1.5 V

With a low VCEsat value, this transistor minimizes power loss and enhances efficiency in switching operations.

Package Shape: RECTANGULAR

The rectangular package shape is commonly used and easy to mount on PCBs, providing convenience in assembly.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy soldering and secure connections, ensuring reliability in the circuit.

No. of Terminals: 3

Having 3 terminals simplifies the connection of the transistor in the circuit, reducing wiring complexity and potential errors.

Maximum Power Dissipation (Abs): 35 W

With a high power dissipation value, this transistor can handle large power loads and operate efficiently without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers mechanical stability and heat dissipation, ensuring reliable performance in various environments.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable operation in a wide range of temperature conditions, enhancing the transistor's versatility.

Maximum Collector-Emitter Voltage: 450 V

With a high collector-emitter voltage rating, this transistor can handle high voltage operations without breakdown, ensuring durability.

Transistor Element Material: SILICON

Being made of silicon, this transistor offers high reliability, temperature stability, and performance, making it a suitable choice for various applications.

Maximum Turn On Time (ton): 1000 ns

The fast turn-on time of 1000 ns ensures quick response in switching operations, improving efficiency and performance.

Maximum Collector Current (IC): 5 A

With a high collector current rating of 5 A, this transistor can handle large current flows, making it suitable for high-power applications.

Maximum Turn Off Time (toff): 4800 ns

The turn-off time of 4800 ns ensures smooth transition and minimal delay in switching off, enhancing overall performance.

Terminal Finish: TIN LEAD

The tin-lead terminal finish provides a reliable solder joint, ensuring secure connections and signal integrity in the circuit.

Terminal Position: SINGLE

Having a single terminal position simplifies the installation and connection of the transistor in the circuit, minimizing errors and improving efficiency.

Case Connection: ISOLATED

The isolated case connection offers protection against electrical interference and ensures stable operation in complex circuits, enhancing reliability.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUT11AFI attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

450 V

Configuration:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

35 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

4800 ns

Maximum Turn On Time (ton):

1000 ns

Maximum VCEsat:

1.5 V

Trade Compliance

BUT11AFI Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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